2N3700UB Transistor Datasheet

2N3700UB Datasheet PDF, Equivalent


Part Number

2N3700UB

Description

NPN Low Power Silicon Transistor

Manufacture

VPT

Total Page 5 Pages
PDF Download
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2N3700UB
2N3057A, 2N3700, 2N3700UB
NPN Low Power Silicon Transistor
Features
JANS Qualified to MIL-PRF-19500/391
2N3700 & 2N3700UB available in JANSR
JEDEC registered 2N3700, 2N3057
Lightweight & Low Power
Ideal for Space, Military, & other High Reliability
Applications
TO-18 (TO-206AA), TO-46 (TO-206AB) Surface
Mount UB Package Styles Package
Rev. V2
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Dynamic Characteristics
Test Conditions
IC = 30 mA
VBC = 140 V
VEB = 7 V
VCE = 90 V
VEB = 5 Vdc
IC = 150 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
Symbol Units Min.
V(BR)CEO V
ICBO
µA
IEBO1
ICES
IEBO2
µA
nA
nA
80
HFE -
VCE(SAT) Vdc
VBE(SAT) Vdc
100
90
50
15
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1 A, VCE = 5 V, f = 1 kHz
HFE
80
Magnitude ofSmall-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 10 V, f = 20 MHz
Output Capacitance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
VCB = 0.5 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25 °C, I Cycle, t = 10 ms
VCE = 10 V, IC = 180 mA
VCE = 40 V, IC = 50 mA
VCE = 80 V, IC = 15 mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
| HFE |
COBO
CIBO
pF
5
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
Max.
10
10
10
10
300
300
0.2
0.5
1.1
400
20
12
60

2N3700UB
2N3057A, 2N3700, 2N3700UB
NPN Low Power Silicon Transistor
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C2
@ TC = 25°C3
Operating & Storage Temperature Range
2. Derate linearly @ 2.85 mW / °C for TA = 25 °C
3. Derate linearly @ 10.3 mW / °C for TC = 25 °C
Symbol
VCEO
VCBO
VEBO
IC
PT
TOP, TSTG
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
RθJC
RθJA
Rev. V2
Value
80 V
140 V
7V
1A
0.5 W
1.0 W
-65°C to +200°C
Max. Value
150°C/W
325°C/W
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com


Features 2N3057A, 2N3700, 2N3700UB NPN Low Power Silicon Transistor Features • JANS Qu alified to MIL-PRF-19500/391 • 2N3700 & 2N3700UB available in JANSR JEDEC re gistered 2N3700, 2N3057 • Lightweight & Low Power • Ideal for Space, Milit ary, & other High Reliability Applicati ons • TO-18 (TO-206AA), TO-46 (TO-206 AB) Surface Mount UB Package Styles Pac kage Rev. V2 Electrical Characteristi cs Parameter Off Characteristics Colle ctor - Emitter Breakdown Voltage Collec tor - Base Cutoff Current Emitter - Bas e Cutoff Current Collector - Emitter Cu toff Current Emitter - Base Cutoff Curr ent On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Sat uration Voltage Base - Emitter Saturati on Voltage Dynamic Characteristics Tes t Conditions IC = 30 mA VBC = 140 V VEB = 7 V VCE = 90 V VEB = 5 Vdc IC = 150 mA, VCE = 10 V IC = 10 mA, VCE = 10 V I C = 500 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA Symbol Units Min. V(BR)CEO V IC.
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