2N3419S

2N3418(S) - 2N3421(S) Series NPN Medium Power Silicon Transistor Features Available in JAN, JANTX, JANTXV, JANS and JANSR 100K rads(Si) per MIL-PRF-19500/393 TO-5 & TO-39 (TO-205AD) Packages Ideal for Medium Power Applications Requiring High Frequency Switching Rev. V4 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Test Conditions Symbol Units Min. IC = 50 mA dc 2N3418, S, 2N3420, S 2N3419, S, 2N3421, S VCE = 80 Vdc, VBE = -0.5 Vdc 2N3418, S, 2N3420, S VCE = 120 Vdc, VBE = -0.5 Vdc 2N3419, S, 2N3421, S VCE = 45 2N3418, S, 2N3420, S VCE = 60 2N3419, S, 2N3421, S V(BR)CEO V dc 60 80 ICEX1 µA dc — ICEO µA dc — Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Base - Emitter Voltage Collector - Emitter Saturation Voltage VEB = 6 Vdc, IC = 0 VEB = 8 Vdc, IC = 0 IEBO µA dc — IC = 100 mA dc, VCE = 2 V dc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 1 A dc, VCE = 2 V dc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 2 A dc, VCE = 2 V dc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 5 A dc, VCE = 5 V dc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 1 A dc, IB = 0.1 A dc IC = 2 A dc, IB = 0.2 A dc IC = 1 A dc, IB = 0.1 A dc IC = 2 A dc, IB = 0.2 A dc HFE VBE(SAT) Vdc 20 40 20 40 15 30 10 15 0.6 0.7 VCE(SAT) Vdc — Max. — 0.3 0.3 5.0 5.0 0.5 10.0 — — 60 120 — — — — 1.2 1.4 0...