2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Features
• Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545
• TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153
Rev. V5
Electrical Characteristics (TA = 25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current
IC = -100 mA dc, IB = 0
VEB = -4.0 V dc, IC = 0 VEB = -5.5 V dc, IC = 0 VCE = -60 V dc, VBE = 0 VCE = -100 V dc, VBE = 0 VCE = -40 V dc, IB = 0
V(BR)CEO V dc
IEBO1 IEBO2 ICES1 ICES2
µA dc mA dc
µA dc mA dc
ICEO µA dc
-80 — — —
—
-1.0 -1.0
-1.0 -1.0
-50
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage Emitter - Base Voltage Non-Saturation
Emitter - Base Saturation Voltage
VCE = -5.0 V dc, IC = -50 mA dc 2N5151, L 2N5153, L
VCE = -5.0 V dc, IC = -2.5 A dc 2N5151, L 2N5153, L
VCE = -5.0 V dc, IC = -5.0 A dc 2N5151, L 2N5153, L
IC = -2.5 A dc, IB = -250 mA dc IC = -5.0 A dc, IB = -500 mA dc
VCE = -5.0 Vdc, IC = -2.5 A dc
IC = -2.5 A dc, IB = -250 mA dc IC = -5.0 A dc, IB = -500 mA dc
hFE -
VCE(sat)1 VCE(sat)2
VBE
V dc V dc
VBE(sat)1 VBE(sat)1
V dc
20 50
30 70
20 40
—
—
—
90 200
-0.75 -1.50 -1.45
-1.45 -2.20
Collector—Emitter Cutoff Current Forward - Current Transfer Ratio
TC = +150oC VCE = -60 V dc, VBE = +2 V dc
TC = -55oC VCE = -5 V dc, IC = -2.5 A dc
2N5151, L 2N5153, L
ICEX µA dc —
-25
hFE4
15 25
(Continued next page)
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Rev. V5
Electrical Characteristics (TA = 25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal Short-Circuit, Forward-Current Transfer Ratio
VCE = -5.0 V dc, IC = -500 mA dc, f = 10 MHz 2N5151 2N5153
| hfe |
-
Common-Emitter, Small-Signal Short-Circuit, Forward-Current Transfer Ratio
IC = -100 mA dc, VCE = -5.0 V dc, f = 1 kHz 2N5151 2N5153
hfe
-
Min.
6 7 20 50
Max. —
Open-Circuit Output Capacitance
Parameter Switching Characteristics
Turn-On Time
Turn-Off Time Storage Time
Fall Time Safe Operating Area
VCB = -10 V dc, IE = 0, f = 1 MHz Test Conditions
Cobo
pF
—
Symbol Units Min.
250 Max.
ton µs —
IC = -5 A dc; IB1 = -500 mA dc, RL = 6 Ω, toff µs —
IB2 = -500 mA dc, VBE(off) = -3.7 V dc
ts µs —
tf µs —
0.5
1.5 1.4 0.5
DC Tests:
Test 1: Test 2: Test 3:
TC = +25°C, I Cycle, tp = 1 s VCE = -5 V dc, IC = -2 A dc VCE = -32 V dc, IC = -310 mA dc VCE = -80 V dc, IC = -12.5 mA dc
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Rev. V5
Absolute Maximum Ratings (TA = 25oC unless otherwise noted)
Ratings Collector - Emitter Voltage
Symbol VCEO
Value -80 V dc
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Reverse Pulse Energy (4) Total Power Dissipation (1)
@ TA = +25°C @ TC = +25°C Operating & Storage Temperature Range
VCBO VEBO
IC
PT TJ, TSTG
-100 V dc
-5.5 V dc -2 A dc -10 A dc (3) 15 mj
1W 10 W -65°C to +200°C
Thermal Characteristics
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Symbol RθJC (2) RθJA (2)
Max. Value 10°C/W 175°C/W
(1) See figures 6, 7, 8 and 9 of MIL-PRF-19500/545 for temperature-power derating curves. (2) See figures 10, 11 and 12 of MIL-PRF-19500/545 for transient thermal impedance graph.
(3) This value applies for PW < 8.3 ms, duty cycle < 1 percent. (4) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit, see
subgroup 5 of the group A inspection table and figure 13 of MIL-PRF-19500/545.
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Outline Drawings (TO-5, TO-39)
Rev. V5
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product informatio.