Silicon Transistor. 2N5151L Datasheet

2N5151L Transistor. Datasheet pdf. Equivalent

2N5151L Datasheet
Recommendation 2N5151L Datasheet
Part 2N5151L
Description PNP Power Silicon Transistor
Feature 2N5151L; 2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JA.
Manufacture VPT
Datasheet
Download 2N5151L Datasheet





VPT 2N5151L
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Features
Available in commercial, JAN, JANTX, JANTXV, JANS and
JANSR 100K rads (Si) per MIL-PRF-19500/545
TO-5 Package: 2N5151L, 2N5153L
TO-39 (TO-205AD) Package: 2N5151, 2N5153
Rev. V5
Electrical Characteristics (TA = 25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
IC = -100 mA dc, IB = 0
VEB = -4.0 V dc, IC = 0
VEB = -5.5 V dc, IC = 0
VCE = -60 V dc, VBE = 0
VCE = -100 V dc, VBE = 0
VCE = -40 V dc, IB = 0
V(BR)CEO V dc
IEBO1
IEBO2
ICES1
ICES2
µA dc
mA dc
µA dc
mA dc
ICEO µA dc
-80
-1.0
-1.0
-1.0
-1.0
-50
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Emitter - Base Voltage Non-Saturation
Emitter - Base Saturation Voltage
VCE = -5.0 V dc, IC = -50 mA dc
2N5151, L
2N5153, L
VCE = -5.0 V dc, IC = -2.5 A dc
2N5151, L
2N5153, L
VCE = -5.0 V dc, IC = -5.0 A dc
2N5151, L
2N5153, L
IC = -2.5 A dc, IB = -250 mA dc
IC = -5.0 A dc, IB = -500 mA dc
VCE = -5.0 Vdc, IC = -2.5 A dc
IC = -2.5 A dc, IB = -250 mA dc
IC = -5.0 A dc, IB = -500 mA dc
hFE -
VCE(sat)1
VCE(sat)2
VBE
V dc
V dc
VBE(sat)1
VBE(sat)1
V dc
20
50
30
70
20
40
90
200
-0.75
-1.50
-1.45
-1.45
-2.20
Collector—Emitter Cutoff Current
Forward - Current Transfer Ratio
TC = +150oC
VCE = -60 V dc, VBE = +2 V dc
TC = -55oC
VCE = -5 V dc, IC = -2.5 A dc
2N5151, L
2N5153, L
ICEX µA dc —
-25
hFE4
15
25
(Continued next page)
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com



VPT 2N5151L
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Rev. V5
Electrical Characteristics (TA = 25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit, Forward-Current Transfer Ratio
VCE = -5.0 V dc, IC = -500 mA dc,
f = 10 MHz
2N5151
2N5153
| hfe |
-
Common-Emitter, Small-Signal Short-Circuit,
Forward-Current Transfer Ratio
IC = -100 mA dc, VCE = -5.0 V dc, f = 1 kHz
2N5151
2N5153
hfe
-
Min.
6
7
20
50
Max.
Open-Circuit Output Capacitance
Parameter
Switching Characteristics
Turn-On Time
Turn-Off Time
Storage Time
Fall Time
Safe Operating Area
VCB = -10 V dc, IE = 0, f = 1 MHz
Test Conditions
Cobo
pF
Symbol Units Min.
250
Max.
ton µs —
IC = -5 A dc; IB1 = -500 mA dc, RL = 6 Ω, toff µs —
IB2 = -500 mA dc, VBE(off) = -3.7 V dc
ts µs —
tf µs —
0.5
1.5
1.4
0.5
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25°C, I Cycle, tp = 1 s
VCE = -5 V dc, IC = -2 A dc
VCE = -32 V dc, IC = -310 mA dc
VCE = -80 V dc, IC = -12.5 mA dc
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com



VPT 2N5151L
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Rev. V5
Absolute Maximum Ratings (TA = 25oC unless otherwise noted)
Ratings
Collector - Emitter Voltage
Symbol
VCEO
Value
-80 V dc
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Reverse Pulse Energy (4)
Total Power Dissipation (1)
@ TA = +25°C
@ TC = +25°C
Operating & Storage Temperature Range
VCBO
VEBO
IC
PT
TJ, TSTG
-100 V dc
-5.5 V dc
-2 A dc
-10 A dc (3)
15 mj
1W
10 W
-65°C to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
RθJC (2)
RθJA (2)
Max. Value
10°C/W
175°C/W
(1) See figures 6, 7, 8 and 9 of MIL-PRF-19500/545 for temperature-power derating curves.
(2) See figures 10, 11 and 12 of MIL-PRF-19500/545 for transient thermal impedance graph.
(3) This value applies for PW < 8.3 ms, duty cycle < 1 percent.
(4) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit, see
subgroup 5 of the group A inspection table and figure 13 of MIL-PRF-19500/545.
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com





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