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2N5151L Dataheets PDF



Part Number 2N5151L
Manufacturers VPT
Logo VPT
Description PNP Power Silicon Transistor
Datasheet 2N5151L Datasheet2N5151L Datasheet (PDF)

2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutof.

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2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -100 mA dc, IB = 0 VEB = -4.0 V dc, IC = 0 VEB = -5.5 V dc, IC = 0 VCE = -60 V dc, VBE = 0 VCE = -100 V dc, VBE = 0 VCE = -40 V dc, IB = 0 V(BR)CEO V dc IEBO1 IEBO2 ICES1 ICES2 µA dc mA dc µA dc mA dc ICEO µA dc -80 — — — — -1.0 -1.0 -1.0 -1.0 -50 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Voltage Non-Saturation Emitter - Base Saturation Voltage VCE = -5.0 V dc, IC = -50 mA dc 2N5151, L 2N5153, L VCE = -5.0 V dc, IC = -2.5 A dc 2N5151, L 2N5153, L VCE = -5.0 V dc, IC = -5.0 A dc 2N5151, L 2N5153, L IC = -2.5 A dc, IB = -250 mA dc IC = -5.0 A dc, IB = -500 mA dc VCE = -5.0 Vdc, IC = -2.5 A dc IC = -2.5 A dc, IB = -250 mA dc IC = -5.0 A dc, IB = -500 mA dc hFE - VCE(sat)1 VCE(sat)2 VBE V dc V dc VBE(sat)1 VBE(sat)1 V dc 20 50 30 70 20 40 — — — 90 200 -0.75 -1.50 -1.45 -1.45 -2.20 Collector—Emitter Cutoff Current Forward - Current Transfer Ratio TC = +150oC VCE = -60 V dc, VBE = +2 V dc TC = -55oC VCE = -5 V dc, IC = -2.5 A dc 2N5151, L 2N5153, L ICEX µA dc — -25 hFE4 15 25 (Continued next page) 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Dynamic Characteristics Magnitude of Common Emitter Small-Signal Short-Circuit, Forward-Current Transfer Ratio VCE = -5.0 V dc, IC = -500 mA dc, f = 10 MHz 2N5151 2N5153 | hfe | - Common-Emitter, Small-Signal Short-Circuit, Forward-Current Transfer Ratio IC = -100 mA dc, VCE = -5.0 V dc, f = 1 kHz 2N5151 2N5153 hfe - Min. 6 7 20 50 Max. — Open-Circuit Output Capacitance Parameter Switching Characteristics Turn-On Time Turn-Off Time Storage Time Fall Time Safe Operating Area VCB = -10 V dc, IE = 0, f = 1 MHz Test Conditions Cobo pF — Symbol Units Min. 250 Max. ton µs — IC = -5 A dc; IB1 = -500 mA dc, RL = 6 Ω, toff µs — IB2 = -500 mA dc, VBE(off) = -3.7 V dc ts µs — tf µs — 0.5 1.5 1.4 0.5 DC Tests: Test 1: Test 2: Test 3: TC = +25°C, I Cycle, tp = 1 s VCE = -5 V dc, IC = -2 A dc VCE = -32 V dc, IC = -310 mA dc VCE = -80 V dc, IC = -12.5 mA dc 2 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Rev. V5 Absolute Maximum Ratings (TA = 25oC unless otherwise noted) Ratings Collector - Emitter Voltage Symbol VCEO Value -80 V dc Collector - Base Voltage Emitter - Base Voltage Collector Current Reverse Pulse Energy (4) Total Power Dissipation (1) @ TA = +25°C @ TC = +25°C Operating & Storage Temperature Range VCBO VEBO IC PT TJ, TSTG -100 V dc -5.5 V dc -2 A dc -10 A dc (3) 15 mj 1W 10 W -65°C to +200°C Thermal Characteristics Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RθJC (2) RθJA (2) Max. Value 10°C/W 175°C/W (1) See figures 6, 7, 8 and 9 of MIL-PRF-19500/545 for temperature-power derating curves. (2) See figures 10, 11 and 12 of MIL-PRF-19500/545 for transient thermal impedance graph. (3) This value applies for PW < 8.3 ms, duty cycle < 1 percent. (4) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit, see subgroup 5 of the group A inspection table and figure 13 of MIL-PRF-19500/545. 3 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Outline Drawings (TO-5, TO-39) Rev. V5 4 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product informatio.


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