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2N5153L Dataheets PDF



Part Number 2N5153L
Manufacturers VPT
Logo VPT
Description PNP Power Silicon Transistor
Datasheet 2N5153L Datasheet2N5153L Datasheet (PDF)

2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutof.

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2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L • TO-39 (TO-205AD) Package: 2N5151, 2N5153 Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -100 mA dc, IB = 0 VEB = -4.0 V dc, IC = 0 VEB = -5.5 V dc, IC = 0 VCE = -60 V dc, VBE = 0 VCE = -100 V dc, VBE = 0 VCE = -40 V dc, IB = 0 V(BR)CEO V dc IEBO1 IEBO2 ICES1 ICES2 µA dc mA dc µA dc mA dc ICEO µA dc -80 — — — — -1.0 -1.0 -1.0 -1.0 -50 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Voltage Non-Saturation Emitter - Base Saturation Voltage VCE = -5.0 V dc, IC = -50 mA dc 2N5151, L 2N5153, L VCE = -5.0 V dc, IC = -2.5 A dc 2N5151, L 2N5153, L VCE = -5.0 V dc, IC = -5.0 A dc 2N5151, L 2N5153, L IC = -2.5 A dc, IB = -250 mA dc IC = -5.0 A dc, IB = -500 mA dc VCE = -5.0 Vdc, IC = -2.5 A dc IC = -2.5 A dc, IB = -250 mA dc IC = -5.0 A dc, IB = -500 mA dc hFE - VCE(sat)1 VCE(sat)2 VBE V dc V dc VBE(sat)1 VBE(sat)1 V dc 20 50 30 70 20 40 — — — 90 200 -0.75 -1.50 -1.45 -1.45 -2.20 Collector—Emitter Cutoff Current Forward - Current Transfer Ratio TC = +150oC VCE = -60 V dc, VBE = +2 V dc TC = -55oC VCE = -5 V dc, IC = -2.5 A dc 2N5151, L 2N5153, L ICEX µA dc — -25 hFE4 15 25 (Continued next page) 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N5151, 2N5151L, 2N5153, 2N5153L PNP Power Silicon Transistor Rev. V5 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Dynamic Characteristics Magnitude of Common Emitter Small-Signal Short-Circuit, Forward-Current Transfer Ratio VCE = -5.0 V dc, IC = -500 mA dc, f = 10 MHz 2N5151 2N5153 | hfe | - Common-Emitter, Small-Signal Short-Circuit, Forward-Current Transfer Ratio IC = -100 mA dc, VCE = -5.0 V dc, f = 1 kHz 2N5151 2N5153 hfe - Min. 6 7 20 50 Max. — Open-Circuit Output Capacitance Parameter Switching Characteristics Turn-On Time Turn-Off Time Storage Time Fall Time Safe Operating Area VCB = -10 V dc, IE = 0, f = 1 MHz Test Conditions Cobo pF — Symbol Units Min. 250 Max. ton µs — IC = -5 A dc; IB1 = -500 mA dc, RL = 6 Ω, toff µs — IB2 = -500 mA dc, VBE(off) = -3.7 V dc ts µs — tf µs — 0.5 1.5 1.4 0.5 DC Tests: Test 1: Test 2: Test 3: TC = +25°C, I Cycle, tp = 1 s VCE = -5 V dc, IC = -2 A dc VCE = -32 V dc, IC = -310 mA dc VCE = -80 V dc, IC = -12.5 mA dc 2 VPT Components and its affiliates reserve the right to make c.


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