SILICON TRANSISTOR. 2N5339 Datasheet

2N5339 TRANSISTOR. Datasheet pdf. Equivalent

Part 2N5339
Description NPN POWER SILICON TRANSISTOR
Feature NPN POWER SILICON TRANSISTOR FEATURES • JAN, JANTX, JANTXV, JANS, and JANSR 100K rad (si) per MIL-P.
Manufacture VPT
Datasheet
Download 2N5339 Datasheet



2N5339
NPN POWER SILICON TRANSISTOR
FEATURES
JAN, JANTX, JANTXV, JANS, and JANSR 100K rad (si) per MIL-PRF-19500/560
TO-39 (TO-205AD) Package
2N5339
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
Collector Emitter Cutoff Current
Collector Base Cutoff Current
Emitter Base Cutoff Current
ON CHARACTERISTIC1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Emitter - Base Saturation Voltage
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small Signal
Short-Circuit Forward Current Transfer Ratio
Output Capacitance
TEST CONDITION
IC = 50 mA dc
VCE = 100 V dc
VCE = 90 V dc, VBE = 1.5 V dc
VCB = 100 V dc
VEB = 6.0 V dc
IC= 0.5 A dc, VCE = 2.0 V
IC = 2.0 A dc, VCE = 2.0 V
IC= 0.5 A dc, VCE = 2.0 V
IC= 2.0 A dc, IB = 0.2 A dc
IC= 5.0 A dc, IB = 0.5 A dc
IC = 150 A dc, IB= 0.2 A dc
IC= 150 A dc, IB =0.5 A dc
IC= 0.5 A dc, VCE = 10.0 V dc, f = 10 MHz
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Input Capacitance
SAFE OPERATING AREA
DC Tests:
TC = + 25 °C, I Cycle, t 0.5 s
Test 1:
VCE = 2 V dc, IC = 5 A dc
Test 2:
VCE = 5 V dc, IC = 2 A dc
Test 3:
VCE = 90 V dc, IC = 55 mA dc
VBE = 2 Vdc, Ic = 0, 100 kHz ≤ f ≤ 1 MHz
NOTES:
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
SYMBOL UNITS
V(BR)CEO
ICEO
ICEX
ICBO
IEBO
Vdc
µA dc
µA dc
µA dc
hFe
VCE(sat)
VBE(sat)
V dc
V dc
|hFe|
Cobo
Cibo
pF
pF
MIN
100
60
60
40
3
MAX
100
1.0
1.0
100
240
0.7
1.2
1.2
1.8
15
250
1000
CONTACT INFORMATION: P: 978-670-7300 • F: 978-670-7450 • E: info@vptcomponents.com W: www.vptcomponents.com
Document No. - Rev V4
Page 1



2N5339
ABSOLUTE MAXIMUM RATINGS
RATING
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 25 °C
@ TC = 25 °C
Operating and Storage Temperature Range
NOTES:
1.
Derate linearly 434 mW / °C for Tc = 25 °C
THERMAL CHARACTERISTICS
CHARACTERISTICS
Thermal Resistance, Junction to Case
SYMBOL
VCEO
VCBO
VEBO
IB
IC
PT
TOP, TSTG
SYMBOL
RθJC
2N5339
VALUE
100 V dc
100 V dc
6 V dc
1 A dc
5 A dc
1.0 W
17.5 W
-65 °C to +200 °C
MAXIMUM VALUE
10 °C/W
CONTACT INFORMATION: P: (978) 670-7300 • F: (978) 670-7450 • E: info@vptcomponents.com W: www.vptcomponents.com
Document No. Rev
Page 2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)