2N5339

NPN POWER SILICON TRANSISTOR FEATURES JAN, JANTX, JANTXV, JANS, and JANSR 100K rad (si) per MIL-PRF-19500/560 TO-39 (TO-205AD) Package 2N5339 ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage Collector – Emitter Cutoff Current Collector – Base Cutoff Current Emitter – Base Cutoff Current ON CHARACTERISTIC1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small Signal Short-Circuit Forward Current Transfer Ratio Output Capacitance TEST CONDITION IC = 50 mA dc VCE = 100 V dc VCE = 90 V dc, VBE = 1.5 V dc VCB = 100 V dc VEB = 6.0 V dc IC= 0.5 A dc, VCE = 2.0 V IC = 2.0 A dc, VCE = 2.0 V IC= 0.5 A dc, VCE = 2.0 V IC= 2.0 A dc, IB = 0.2 A dc IC= 5.0 A dc, IB = 0.5 A dc IC = 150 A dc, IB= 0.2 A dc IC= 150 A dc, IB =0.5 A dc IC= 0.5 A dc, VCE = 10.0 V dc, f = 10 MHz VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz Input Capacitance SAFE OPERATING AREA DC Tests: TC = + 25 °C, I Cycle, t ≥ 0.5 s Test 1: VCE = 2 V dc, IC = 5 A dc Test 2: VCE = 5 V dc, IC = 2 A dc Test 3: VCE = 90 V dc, IC = 55 mA dc VBE = 2 Vdc, Ic = 0, 100 kHz ≤ f ≤ 1 MHz NOTES: 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% SYMBOL UNITS V(BR)CEO ICEO ICEX ICBO IEBO Vdc µA dc µA dc µA dc hFe VCE(sat) VBE(sat) ─ V dc V dc |hFe| Cobo Cibo ─ pF pF MIN 100 ─ ─ ─ 60 60 40 ─ ─ 3 ─ ─ MAX ─ 100 1.0 1.0 100 ─ 240 ─ 0.7 1.2 1.2 1.8 15 250 1000 CONTAC...