2N6675

2N6674 & 2N6675 NPN High Power Silicon Transistor Features Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537 TO-3 (TO-204AA) Package Designed for High Voltage, High Speed Switching Applications Ideal for Regulators, Inverters and Deflection Circuits Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current IC = 200 mA dc 2N6674 2N6675 V(BR)CEO Vdc 300 400 VCE = 450 Vdc; VBE = -1.5 V dc, 2N6674 VCE = 650 Vdc; VBE = -1.5 V dc, 2N6675 ICEX1 mA dc — VEB = 7 V dc VCB = 450 V dc, 2N6674 VCB = 650 V dc, 2N6675 IEBO mA dc ICBO mA dc — — — 0.1 2.0 1.0 Forward Current Transfer Ratio Collector - Emitter Voltage (Saturated) Base - Emitter Saturation Voltage Collector - Emitter Cutoff Current Collector - Emitter Voltage (Saturated) Forward Current Transfer Ratio VCE = 3 V dc; IC = 1 A dc VCE = 2 V dc; IC = 10 A dc hFE - IC = 10 A dc; IB = 2 A dc IC = 15 A dc; IB = 5 A dc VCE(sat)1 VCE(sat)2 V dc IC = 10 A dc; IB = 2 A dc VBE(sat) V dc TA = +125oC VCE = 450 Vdc; VBE = -1.5 V dc, 2N6674 VCE = 650 Vdc; VBE = -1.5 V dc, 2N6675 ICEX2 mA dc TA = +125oC IC = 10 A dc; IB = 2 A dc VCE(sat)3 V dc TA = -55oC VCE = 2 V dc; IC = 10 A dc hFE3 - 15 8 — — — — 4 Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio Output Capacitance ...