2N6675 Transistor Datasheet

2N6675 Datasheet PDF, Equivalent


Part Number

2N6675

Description

NPN High Power Silicon Transistor

Manufacture

VPT

Total Page 4 Pages
Datasheet
Download 2N6675 Datasheet


2N6675
2N6674 & 2N6675
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/537
TO-3 (TO-204AA) Package
Designed for High Voltage, High Speed Switching Applications
Ideal for Regulators, Inverters and Deflection Circuits
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Min.
Max.
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
Collector - Base Cutoff Current
IC = 200 mA dc
2N6674
2N6675
V(BR)CEO Vdc
300
400
VCE = 450 Vdc; VBE = -1.5 V dc, 2N6674
VCE = 650 Vdc; VBE = -1.5 V dc, 2N6675
ICEX1 mA dc
VEB = 7 V dc
VCB = 450 V dc, 2N6674
VCB = 650 V dc, 2N6675
IEBO mA dc
ICBO mA dc
0.1
2.0
1.0
Forward Current Transfer Ratio
Collector - Emitter Voltage (Saturated)
Base - Emitter Saturation Voltage
Collector - Emitter Cutoff Current
Collector - Emitter Voltage (Saturated)
Forward Current Transfer Ratio
VCE = 3 V dc; IC = 1 A dc
VCE = 2 V dc; IC = 10 A dc
hFE -
IC = 10 A dc; IB = 2 A dc
IC = 15 A dc; IB = 5 A dc
VCE(sat)1
VCE(sat)2
V dc
IC = 10 A dc; IB = 2 A dc
VBE(sat) V dc
TA = +125oC
VCE = 450 Vdc; VBE = -1.5 V dc, 2N6674
VCE = 650 Vdc; VBE = -1.5 V dc, 2N6675
ICEX2 mA dc
TA = +125oC
IC = 10 A dc; IB = 2 A dc
VCE(sat)3 V dc
TA = -55oC
VCE = 2 V dc; IC = 10 A dc
hFE3
-
15
8
4
Magnitude of Common Emitter
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Output Capacitance
VCE = 10 Vdc; IC = 1 A dc; f = 5 MHz | hFE | -
VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo pF
3
150
40
20
1.0
5.0
1.5
1.0
2.0
10
500
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

2N6675
2N6674 & 2N6675
NPN High Power Silicon Transistor
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Cross-Over Time
See figure 3 of MIL-PRF-19500/537
td
tr
ts µs
tf
tc
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Base Current
Total Power Dissipation (1)
@ TA = +25°C
@ TA = +25°C
Operating & Storage Temperature Range
Symbol
VCEO
VCBO, VCBX
VEBO
IC
IB
PT
TOP, TSTG
2N6674
2N6675
300 400
450 650
7
15
5
66
175 175
-65 to +200
(1) Derate linearly @ 1.0 mW/°C for TC > 25°C.
Derate linearly @ 34.2 mW/°C for TA > 25°C.
Rev. V3
Max.
0.1
0.6
2.5
0.5
0.5
Units
V dc
V dc
V dc
A dc
A dc
W
°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
RθJC
Max. Value
1°C/W
Safe Operating Area
DC Tests:
TC = +25°C, I Cycle, t = 1.0 s (see figure 4 of MIL-PRF-19500/537)
Test 1:
Test 2:
Test 3:
Test 4:
Test 5:
VCE = 11.7 Vdc, IC = 15 A dc
VCE = 30 Vdc, IC = 5.9 A dc
VCE = 100 Vdc, IC = 0.25 A dc
VCE = 25 Vdc, IC = 7 A dc
VCE = 300 Vdc, IC = 20 mA dc, (for 2N6674)
VCE = 400 Vdc, IC = 10 mA dc, (for 2N6675)
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N6674 & 2N6675 NPN High Power Silicon T ransistor Features • Available in JAN , JANTX, JANTXV per MIL-PRF-19500/537 TO-3 (TO-204AA) Package • Designed for High Voltage, High Speed Switching Applications • Ideal for Regulators, Inverters and Deflection Circuits Rev . V3 Electrical Characteristics (TA = +25oC unless otherwise noted) Paramete r Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Vo ltage Collector - Emitter Cutoff Curren t Emitter - Base Cutoff Current Collect or - Base Cutoff Current IC = 200 mA d c 2N6674 2N6675 V(BR)CEO Vdc 300 400 VCE = 450 Vdc; VBE = -1.5 V dc, 2N6674 VCE = 650 Vdc; VBE = -1.5 V dc, 2N6675 ICEX1 mA dc — VEB = 7 V dc VCB = 450 V dc, 2N6674 VCB = 650 V dc, 2N6675 IEBO mA dc ICBO mA dc — — — 0 .1 2.0 1.0 Forward Current Transfer Ra tio Collector - Emitter Voltage (Satura ted) Base - Emitter Saturation Voltage Collector - Emitter Cutoff Current Coll ector - Emitter Voltage (Saturated) Forward Current Transfer Ratio VCE = 3 V d.
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