2N6249 Transistor Datasheet

2N6249 Datasheet PDF, Equivalent


Part Number

2N6249

Description

NPN Darlington Power Silicon Transistor

Manufacture

VPT

Total Page 5 Pages
PDF Download
Download 2N6249 Datasheet PDF


2N6249
2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/510
TO-3 (TO-204AA) Package
Suitable for High Voltage, High Current, High Speed Switching
Applications
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Min.
Collector - Emitter Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Collector - Base Cutoff Current
Forward Current Transfer Ratio
Collector - Emitter Sustaining Voltage
Base - Emitter Saturation Voltage
IC = 200 mA dc, L = 42 mH,
f = 30 - 60 GHz
2N6249
2N6250
2N6251
IC = 200 mA dc, L = 42 mH,
f = 30 - 60 GHz
RBE = 50 Ω
2N6249
2N6250
2N6251
V(BR)CEO V dc
V(BR)CER V dc
VEB = 6 Vdc
IEBO µA dc
VCE = 150 V dc, 2N6249
VCE = 225 V dc, 2N6250
VCE = 300 V dc, 2N6251
ICEO mA dc
VCE = 225 V dc, VBE = -1.5 V dc, 2N6249
VCE = 300 V dc, VBE = -1.5 V dc, 2N6250
VCE = 375 V dc, VBE = -1.5 V dc, 2N6251
ICEX1
µA dc
VCE = 300 V dc, 2N6249
VCE = 375 V dc, 2N6250
VCE = 450 V dc, 2N6251
IC = 10 A dc, VCE = 3 Vdc
2N6249
2N6250
2N6251
ICBO mA dc
hFE1
-
IC = 10 A dc, IB = 1.0 A dc, 2N6249
IC = 10 A dc, IB = 1.25 A dc, 2N6250
IC = 10 A dc, IB = 1.67 A dc, 2N6251
VCE(SAT) V dc
IC = 10 A dc, IB = 1.0 A dc, 2N6249
IC = 10 A dc, IB = 1.25 A dc, 2N6250
IC = 10 A dc, IB = 1.67 A dc, 2N6251
VBE(SAT) V dc
10
8
6
Rev. V4
Max.
200
275
350
225
300
375
100
1.0
10
0.5
50
50
50
1.5
2.25
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.

2N6249
2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Min.
Collector - Emitter Cutoff Current
TA = +125oC
VCE = 225 V dc, VBE = -1.5 V dc, 2N6249
VCE = 300 V dc, VBE = -1.5 V dc, 2N6250
VCE = 375 V dc, VBE = -1.5 V dc, 2N6251
ICEX2
µA dc
Forward - Current Transfer Ratio
Dynamic Characteristics
Small-Signal Short-Circuit Forward Current
Transfer Ratio
TA = -55oC
VCE = 3 V dc, IC = 10 A dc
2N6249
2N6250
2N6251
IC = 1 A dc, VCE = 10 Vdc, f = 1 MHz
hFE2
-
| hFE | -
5
4
3
2.5
Open Capacitance Open Circuit
VCE = 10 Vdc, IC = 0, 100 kHz ≤ f ≤ 1 MHz Cobo
Switching Characteristics
Turn-On Time
VCC = 200 Vdc; IC = 10 A dc;
IB = 1.0 A dc, 2N6249
IB = 1.25 A dc, 2N6250
IB = 1.67 A dc, 2N6251
ton
Turn-Off Time
VCC = 200 Vdc; IC = 10 A dc;
IB = 1.0 A dc, 2N6249
IB = 1.25 A dc, 2N6250
IB = 1.67 A dc, 2N6251
toff
Safe Operating Area
DC Tests:
TC = +25 °C, I Cycle, t = 1.0 s (see figure 12 of MIL-PRF-19500/371)
Test 1:
Test 2:
Test 3:
Test 4:
Test 5:
Test 6:
VCE = 17.5 Vdc, IC = 10 A dc
VCE = 30 Vdc, IC = 5.8 A dc
VCE = 100 Vdc, IC = 0.3 A dc
VCE = 200 Vdc, IC = 0.13 A dc, (for 2N6249 only)
VCE = 275 Vdc, IC = 0.09 A dc, (for 2N6250 only)
VCE = 350 Vdc, IC = 0.065 A dc, (for 2N6251 only)
pF
µs
µs
Rev. V4
Max.
90
15.0
500
2.0
4.5
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.


Features 2N6249, 2N6250, & 2N6251 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MI L-PRF-19500/510 • TO-3 (TO-204AA) Pac kage • Suitable for High Voltage, Hig h Current, High Speed Switching Applica tions Electrical Characteristics (TA = +25oC unless otherwise noted) Paramete r Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage E mitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Em itter Cutoff Current Collector - Base C utoff Current Forward Current Transfer Ratio Collector - Emitter Sustaining Vo ltage Base - Emitter Saturation Voltage IC = 200 mA dc, L = 42 mH, f = 30 - 6 0 GHz 2N6249 2N6250 2N6251 IC = 200 mA dc, L = 42 mH, f = 30 - 60 GHz RBE = 50 Ω 2N6249 2N6250 2N6251 V(BR)CEO V dc V(BR)CER V dc VEB = 6 Vdc IEBO µA d c VCE = 150 V dc, 2N6249 VCE = 225 V d c, 2N6250 VCE = 300 V dc, 2N6251 ICEO mA dc VCE = 225 V dc, VBE = -1.5 V dc, 2N6249 VCE = 300 V dc, VBE = -1.
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