Silicon Transistor. 2N6249 Datasheet

2N6249 Transistor. Datasheet pdf. Equivalent

2N6249 Datasheet
Recommendation 2N6249 Datasheet
Part 2N6249
Description NPN Darlington Power Silicon Transistor
Feature 2N6249; 2N6249, 2N6250, & 2N6251 NPN Darlington Power Silicon Transistor Features • Available in JAN, JANT.
Manufacture VPT
Datasheet
Download 2N6249 Datasheet





VPT 2N6249
2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/510
TO-3 (TO-204AA) Package
Suitable for High Voltage, High Current, High Speed Switching
Applications
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Min.
Collector - Emitter Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Collector - Base Cutoff Current
Forward Current Transfer Ratio
Collector - Emitter Sustaining Voltage
Base - Emitter Saturation Voltage
IC = 200 mA dc, L = 42 mH,
f = 30 - 60 GHz
2N6249
2N6250
2N6251
IC = 200 mA dc, L = 42 mH,
f = 30 - 60 GHz
RBE = 50 Ω
2N6249
2N6250
2N6251
V(BR)CEO V dc
V(BR)CER V dc
VEB = 6 Vdc
IEBO µA dc
VCE = 150 V dc, 2N6249
VCE = 225 V dc, 2N6250
VCE = 300 V dc, 2N6251
ICEO mA dc
VCE = 225 V dc, VBE = -1.5 V dc, 2N6249
VCE = 300 V dc, VBE = -1.5 V dc, 2N6250
VCE = 375 V dc, VBE = -1.5 V dc, 2N6251
ICEX1
µA dc
VCE = 300 V dc, 2N6249
VCE = 375 V dc, 2N6250
VCE = 450 V dc, 2N6251
IC = 10 A dc, VCE = 3 Vdc
2N6249
2N6250
2N6251
ICBO mA dc
hFE1
-
IC = 10 A dc, IB = 1.0 A dc, 2N6249
IC = 10 A dc, IB = 1.25 A dc, 2N6250
IC = 10 A dc, IB = 1.67 A dc, 2N6251
VCE(SAT) V dc
IC = 10 A dc, IB = 1.0 A dc, 2N6249
IC = 10 A dc, IB = 1.25 A dc, 2N6250
IC = 10 A dc, IB = 1.67 A dc, 2N6251
VBE(SAT) V dc
10
8
6
Rev. V4
Max.
200
275
350
225
300
375
100
1.0
10
0.5
50
50
50
1.5
2.25
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.



VPT 2N6249
2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Min.
Collector - Emitter Cutoff Current
TA = +125oC
VCE = 225 V dc, VBE = -1.5 V dc, 2N6249
VCE = 300 V dc, VBE = -1.5 V dc, 2N6250
VCE = 375 V dc, VBE = -1.5 V dc, 2N6251
ICEX2
µA dc
Forward - Current Transfer Ratio
Dynamic Characteristics
Small-Signal Short-Circuit Forward Current
Transfer Ratio
TA = -55oC
VCE = 3 V dc, IC = 10 A dc
2N6249
2N6250
2N6251
IC = 1 A dc, VCE = 10 Vdc, f = 1 MHz
hFE2
-
| hFE | -
5
4
3
2.5
Open Capacitance Open Circuit
VCE = 10 Vdc, IC = 0, 100 kHz ≤ f ≤ 1 MHz Cobo
Switching Characteristics
Turn-On Time
VCC = 200 Vdc; IC = 10 A dc;
IB = 1.0 A dc, 2N6249
IB = 1.25 A dc, 2N6250
IB = 1.67 A dc, 2N6251
ton
Turn-Off Time
VCC = 200 Vdc; IC = 10 A dc;
IB = 1.0 A dc, 2N6249
IB = 1.25 A dc, 2N6250
IB = 1.67 A dc, 2N6251
toff
Safe Operating Area
DC Tests:
TC = +25 °C, I Cycle, t = 1.0 s (see figure 12 of MIL-PRF-19500/371)
Test 1:
Test 2:
Test 3:
Test 4:
Test 5:
Test 6:
VCE = 17.5 Vdc, IC = 10 A dc
VCE = 30 Vdc, IC = 5.8 A dc
VCE = 100 Vdc, IC = 0.3 A dc
VCE = 200 Vdc, IC = 0.13 A dc, (for 2N6249 only)
VCE = 275 Vdc, IC = 0.09 A dc, (for 2N6250 only)
VCE = 350 Vdc, IC = 0.065 A dc, (for 2N6251 only)
pF
µs
µs
Rev. V4
Max.
90
15.0
500
2.0
4.5
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.



VPT 2N6249
2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TA = +25°C
@ TC = +25°C1
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PT
TJ, TSTG
2N6249
200
300
Rev. V4
2N6250
275
375
6
10
5
6
175
-65 to +200
2N6251
350
450
Units
V dc
V dc
V dc
A dc
A dc
W
°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case 2
Symbol
RθJC
(1) For temperature-power derating curves, see figures 5 and 6 of MIL-PRF-19500/510
(2) For thermal impedance curves, see figures 7, 8 and 9 of MIL-PRF-19500/510
Max. Value
1.0°C/W
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com.





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