2N3868

2N3867, 2N3867S & 2N3868, 2N3868S PNP Silicon Low Power Transistor Features Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350 TO-5 Package: 2N3867, 2N3868 TO-39 Package: 2N3867S, 2N3868S Designed for High Speed Switching and Amplifier Applications Rev. V3 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current VCB = -40V 2N3867, 2N3867S VCB = -60V 2N3868, 2N3868S IC = -20 mA dc, 2N3867, 2N3867S IC = -20 mA dc, 2N3868, 2N3868S VEB = +2.0 V dc, VCE = -40 Vdc, 2N3867, 2N3867S VEB = +2.0 V dc, VCE = -60 Vdc, 2N3868, 2N3868S VEB = -4.0 Vdc ICBO1 µA dc V(BR)CEO V dc -40 -60 ICEX1 µA dc — IEBO1 µA dc — -100 — -1.0 -1.0 -100 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage VCE = -1.0 V dc, IC = -500 mA dc 2N3867, 2N3867S 2N3868, 2N3868S VCE = -2.0 Vdc, IC = -1.5 A dc 2N3867, 2N3867S 2N3868, 2N3868S VCE = -3.0 V dc, IC = -2.5 A dc 2N3867, 2N3867S 2N3868, 2N3868S VCE = -5.0 V dc, IC = -3.0 mA dc All Types IC = -500 mA dc, IB = -50 mA dc IC = -1.5 A dc, IB = -150 mA dc IC = -2.5 A dc, IB = -250 mA dc hFE - VCE(sat)1 VCE(sat)2 VCE(sat)3 V dc 50 35 40 30 25 20 20 — — — 200 150 — — — -0.5 -0.75 -1.5 Base - Emitter Saturation Voltage IC = -500 mA dc, IB = -50 mA dc IC = -1.5 A dc, IB = -150 mA dc IC = -2.5 A, IB = -250 mA dc VBE(sat)1 VBE(sat)2 ...