2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power Transistor
Features
• Available in JAN, JANTX, JANTXV per MIL-PR...
2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power
Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350 TO-5 Package: 2N3867, 2N3868 TO-39 Package: 2N3867S, 2N3868S Designed for High Speed Switching and Amplifier Applications
Rev. V3
Electrical Characteristics (TA = 25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min. Max.
Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current Emitter - Base Cutoff Current
VCB = -40V 2N3867, 2N3867S VCB = -60V 2N3868, 2N3868S
IC = -20 mA dc, 2N3867, 2N3867S IC = -20 mA dc, 2N3868, 2N3868S
VEB = +2.0 V dc, VCE = -40 Vdc, 2N3867, 2N3867S
VEB = +2.0 V dc, VCE = -60 Vdc, 2N3868, 2N3868S
VEB = -4.0 Vdc
ICBO1 µA dc V(BR)CEO V dc
-40 -60
ICEX1 µA dc
—
IEBO1 µA dc
—
-100
—
-1.0 -1.0 -100
Forward Current Transfer Ratio Collector - Emitter Saturation Voltage
VCE = -1.0 V dc, IC = -500 mA dc 2N3867, 2N3867S 2N3868, 2N3868S
VCE = -2.0 Vdc, IC = -1.5 A dc 2N3867, 2N3867S 2N3868, 2N3868S
VCE = -3.0 V dc, IC = -2.5 A dc 2N3867, 2N3867S 2N3868, 2N3868S
VCE = -5.0 V dc, IC = -3.0 mA dc All Types
IC = -500 mA dc, IB = -50 mA dc IC = -1.5 A dc, IB = -150 mA dc IC = -2.5 A dc, IB = -250 mA dc
hFE -
VCE(sat)1 VCE(sat)2 VCE(sat)3
V dc
50 35
40 30
25 20
20
—
— —
200 150
— —
— -0.5 -0.75 -1.5
Base - Emitter Saturation Voltage
IC = -500 mA dc, IB = -50 mA dc IC = -1.5 A dc, IB = -150 mA dc
IC = -2.5 A, IB = -250 mA dc
VBE(sat)1 VBE(sat)2 ...