2N3442

2N3442 NPN Silicon Power Transistor Features Available in JAN, JANTX, JANTXV per MIL-PRF-19500/370 TO-3 Package Designed for High Voltage, High Power Switching and Amplifier Applications Rev. V2 Electrical Characteristics (TC = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current IC = 3 A dc IC = 1.5 A dc, RBE = 100 Ω VEB = 1.5 V dc, IC = 1.5 A dc VEB = 1.5 V dc, VCE = 125 V dc VCB = 140 V dc VEB = 7.0 V dc V(BR)CEO V(BR)CER V(BR)CEX V dc ICEX mA dc ICBO1 mA dc IEBO mA dc 140 150 160 — — Max. — 0.01 0.1 1 Forward Current Transfer Ratio VCE = 4.0 V dc, IC = 3 A dc hFE1 - 20 Collector - Emitter Saturation Voltage Emitter - Base Voltage (non-saturated) IC = 3 A dc, IB = 300 mA dc IC = 3 A dc, VCE = 4.0 V dc VCE(SAT) V dc VBE V dc Small-Signal Short-Circuit Forward-Current Transfer Ratio VCE = 4 V dc, IC = 3 A dc, f = 100 kHz hfe — — — 1 Collector - Emitter Cutoff Current Forward Current Transfer Ratio TA = +150oC VCB = 140 V dc TA = -55oC VCE = 4 V dc, IC = 3 A dc ICBO2 mA dc hFE2 - — 15 70 1.0 1.7 — 1.0 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected]...