2N3442 Transistor Datasheet

2N3442 Datasheet PDF, Equivalent


Part Number

2N3442

Description

NPN Silicon Power Transistor

Manufacture

VPT

Total Page 5 Pages
Datasheet
Download 2N3442 Datasheet


2N3442
2N3442
NPN Silicon Power Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/370
TO-3 Package
Designed for High Voltage, High Power Switching and
Amplifier Applications
Rev. V2
Electrical Characteristics (TC = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
IC = 3 A dc
IC = 1.5 A dc, RBE = 100 Ω
VEB = 1.5 V dc, IC = 1.5 A dc
VEB = 1.5 V dc, VCE = 125 V dc
VCB = 140 V dc
VEB = 7.0 V dc
V(BR)CEO
V(BR)CER
V(BR)CEX
V dc
ICEX mA dc
ICBO1 mA dc
IEBO mA dc
140
150
160
Max.
0.01
0.1
1
Forward Current Transfer Ratio
VCE = 4.0 V dc, IC = 3 A dc
hFE1
-
20
Collector - Emitter Saturation Voltage
Emitter - Base Voltage (non-saturated)
IC = 3 A dc, IB = 300 mA dc
IC = 3 A dc, VCE = 4.0 V dc
VCE(SAT) V dc
VBE V dc
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
VCE = 4 V dc, IC = 3 A dc, f = 100 kHz
hfe
1
Collector - Emitter Cutoff Current
Forward Current Transfer Ratio
TA = +150oC
VCB = 140 V dc
TA = -55oC
VCE = 4 V dc, IC = 3 A dc
ICBO2 mA dc
hFE2
-
15
70
1.0
1.7
1.0
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

2N3442
2N3442
NPN Silicon Power Transistor
Absolute Maximum Ratings (TC = +25oC unless otherwise noted)
Ratings
Collector - Emitter Voltage
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TA = +25°C 1
Total Power Dissipation @ TC = +25°C 2
Operating & Storage Temperature Range
Symbol
VCEO
VCER
VCBO
VEBO
IB
IC
PT
PT
TJ, TSTG
Value
140 V dc
150 V dc
160 V dc
7.0 V dc
7.0 A dc
10 A dc
6.0 W
117 W
-65°C to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case 3
Symbol
RθJC
1. Derate linearly 34.2 mW/oC above TA = +25oC.
2. See figure 2 of MIL-PRF-19500/370 for temperature-power derating curves.
3. See figure 3 of MIL-PRF-19500/370 for transient thermal impedance graph.
Max. Value
1.5°C/W
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25 °C, I Cycle, t = 1.0 s
IC = 10 A dc, VCE = 11.7 V dc
IC = 1.5 A dc, VCE = 78 V dc
IC = 0.5 A dc, VCE = 125 V dc
Rev. V2
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N3442 NPN Silicon Power Transistor Feat ures • Available in JAN, JANTX, JANTX V per MIL-PRF-19500/370 • TO-3 Packag e • Designed for High Voltage, High P ower Switching and Amplifier Applicatio ns Rev. V2 Electrical Characteristics (TC = +25oC unless otherwise noted) P arameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Vo ltage Collector - Emitter Cutoff Curren t Collector - Base Cutoff Current Emitt er - Base Cutoff Current IC = 3 A dc I C = 1.5 A dc, RBE = 100 Ω VEB = 1.5 V dc, IC = 1.5 A dc VEB = 1.5 V dc, VCE = 125 V dc VCB = 140 V dc VEB = 7.0 V dc V(BR)CEO V(BR)CER V(BR)CEX V dc ICE X mA dc ICBO1 mA dc IEBO mA dc 140 15 0 160 — — Max. — 0.01 0.1 1 For ward Current Transfer Ratio VCE = 4.0 V dc, IC = 3 A dc hFE1 - 20 Collect or - Emitter Saturation Voltage Emitter - Base Voltage (non-saturated) IC = 3 A dc, IB = 300 mA dc IC = 3 A dc, VCE = 4.0 V dc VCE(SAT) V dc VBE V dc Sma ll-Signal Short-Circuit Forward-Current Transfer Ratio VCE = 4 V dc, IC = 3.
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