2N5795

2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transistors Features Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496 TO-78 and U package types Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics (+25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Saturation Voltage Forward-Current Transfer Ratio (Gain Ratio) (2N5795A, 2N5796A) Test Conditions IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VEB = 5.0 V dc VEB = 3.0 V dc 2N5795, 2N5795A VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 300 mA dc VCE = 1.0 V dc; IC = 150 mA dc 2N5796, 2N5796U 2N5796A VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 300 mA dc VCE = 1.0 V dc; IC = 150 mA dc IC = 150 mA dc; IB = 15 mA dc IC = 500 mA dc; IB = 50 mA dc IC = 150 mA dc; IB = 15 mA dc IC = 500 mA dc; IB = 50 mA dc VCE = 10 V dc; IC = 10 mA dc Symbol Units Min. Max. V(BR)CEO V dc ICBO1 ICBO2 IEBO1 IEBO2 µA dc nA dc µA dc nA dc 60 — — — 10 10 10 100 hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE 40 40 40 40 20 20 75 100...