2N5795A Transistors Datasheet

2N5795A Datasheet PDF, Equivalent


Part Number

2N5795A

Description

PNP Dual Silicon Transistors

Manufacture

VPT

Total Page 6 Pages
PDF Download
Download 2N5795A Datasheet PDF


2N5795A
2N5795, 2N5795A, 2N5796
2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transistors
Features
Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-
19500/496
TO-78 and U package types
Radiation Tolerant Levels M, D, P, L, and R
Rev. V3
Electrical Characteristics (+25oC unless otherwise specified)
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Forward-Current Transfer Ratio
(Gain Ratio)
(2N5795A, 2N5796A)
Test Conditions
IC = 10 mA dc
VCB = 60 V dc
VCB = 50 V dc
VEB = 5.0 V dc
VEB = 3.0 V dc
2N5795, 2N5795A
VCE = 10 V dc; IC = 0.1 mA dc
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
VCE = 10 V dc; IC = 150 mA dc
VCE = 10 V dc; IC = 300 mA dc
VCE = 1.0 V dc; IC = 150 mA dc
2N5796, 2N5796U
2N5796A
VCE = 10 V dc; IC = 0.1 mA dc
VCE = 10 V dc; IC = 1.0 mA dc
VCE = 10 V dc; IC = 10 mA dc
VCE = 10 V dc; IC = 150 mA dc
VCE = 10 V dc; IC = 300 mA dc
VCE = 1.0 V dc; IC = 150 mA dc
IC = 150 mA dc; IB = 15 mA dc
IC = 500 mA dc; IB = 50 mA dc
IC = 150 mA dc; IB = 15 mA dc
IC = 500 mA dc; IB = 50 mA dc
VCE = 10 V dc; IC = 10 mA dc
Symbol Units Min. Max.
V(BR)CEO V dc
ICBO1
ICBO2
IEBO1
IEBO2
µA dc
nA dc
µA dc
nA dc
60
10
10
10
100
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
hFE
40
40
40
40
20
20
75
100
100
100
50
50
150
300
VCE(SAT)1
VCE(SAT)2
Vdc
VBE(SAT)1 Vdc
VBE(SAT)2 Vdc
hFE2-1
—––
hFE2-2
0.9
0.4
1.6
1.3
2.6
1.1
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com

2N5795A
2N5795, 2N5795A, 2N5796
2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transistors
Electrical Characteristics (+25oC unless otherwise specified)
Parameter
Test Conditions
Forward-Current Transfer Ratio
(Gain Ratio)
(2N5795A, 2N5796A)
VCE = 10 V dc; IC = 10 mA dc
Absolute Value of Base Emitter-Voltage
Differential
(2N5795A, 2N5796A )
Collector-Base Cutoff Current
Forward Current Transfer Ratio
VCE = 10 V dc; IC = 1 mA dc
TA = +150oC
VCB = 50 V dc
TA = -55oC
2N5795, 2N5795A
2N5796, 2N5796U, 2N5796UC
2N5796, 2N5796AUC
Symbol Units Min.
hFE3-1
—––
hFE3-2
0.9
|VBE1-VBE2| mV dc
ICBO3
µA
hFE7
16
40
40
Rev. V3
Max.
1.1
10
10
Collector One to Collector Two Leakage
Current
V(1C-2C) = +50 V dc
1(1C-2C) nA dc
Dynamic Characteristics
Magnitude of Common
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20 mA dc, VCE = 20 V dc, f = 100 MHz | hFE | -
Open Circuit Output Capacitance VCB = 10 V dc, IE = 0 mA , 100 kHz ≤ f ≤ 1 MHz Cobo pF
Input Capacitance
(Output Open-Circuited)
VEB = 2.0 V dc; IC = 0 mA; 100 kHz ≤ f ≤ 1 MHz Cibo pF
Switching Characteristics
Turn-On Time (saturated)
VCC = 30 V dc; IC = 150 mA dc; IB1 = 15 mA dc ton
ns
2.0
Turn-Off Time (saturated)
VCC = 30 Vdc; IC = 150 mA dc; IB1 = IB2 = 15 mA dc toff
ns
+1
10
8.0
30
50
140
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Features 2N5795, 2N5795A, 2N5796 2N5796A, 2N5796A U, 2N5796U PNP Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500 /496 • TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, a nd R Rev. V3 Electrical Characteristi cs (+25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cu toff Current On Characteristics1 Forwar d Current Transfer Ratio Collector - Em itter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Satu ration Voltage Forward-Current Transfer Ratio (Gain Ratio) (2N5795A, 2N5796A) Test Conditions IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VEB = 5.0 V dc VEB = 3.0 V dc 2N5795, 2N5795A VCE = 10 V d c; IC = 0.1 mA dc VCE = 10 V dc; IC = 1 .0 mA dc VCE = 10 V dc; IC = 10 mA dc V CE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 300 mA dc VCE = 1.0 V dc; IC = 150 mA dc 2N5796, 2N5796U 2N5796A VCE = 10 V dc; IC = 0.1 mA dc VCE.
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