2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transistors
Features
• Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496
• TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R
Rev. V3
Electrical Characteristics (+25oC unless otherwise specified)
Parameter Off Characteristics
Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Saturation Voltage Forward-Current Transfer Ratio (Gain Ratio) (2N5795A, 2N5796A)
Test Conditions
IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VEB = 5.0 V dc VEB = 3.0 V dc
2N5795, 2N5795A VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 300 mA dc VCE = 1.0 V dc; IC = 150 mA dc
2N5796, 2N5796U 2N5796A
VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 300 mA dc VCE = 1.0 V dc; IC = 150 mA dc
IC = 150 mA dc; IB = 15 mA dc IC = 500 mA dc; IB = 50 mA dc IC = 150 mA dc; IB = 15 mA dc IC = 500 mA dc; IB = 50 mA dc
VCE = 10 V dc; IC = 10 mA dc
Symbol Units Min. Max.
V(BR)CEO V dc
ICBO1 ICBO2 IEBO1 IEBO2
µA dc nA dc
µA dc nA dc
60 — —
—
10 10 10 100
hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE1 hFE2 hFE3 hFE4 hFE5 hFE6
hFE
40 40 40 40 20 20
75 100 100 100 50 50
150 300
VCE(SAT)1 VCE(SAT)2
Vdc
VBE(SAT)1 Vdc
VBE(SAT)2 Vdc
— — —
hFE2-1 —–– hFE2-2
0.9
0.4 1.6 1.3 2.6
1.1
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%. 1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transistors
Electrical Characteristics (+25oC unless otherwise specified)
Parameter
Test Conditions
Forward-Current Transfer Ratio (Gain Ratio)
(2N5795A, 2N5796A)
VCE = 10 V dc; IC = 10 mA dc
Absolute Value of Base Emitter-Voltage Differential
(2N5795A, 2N5796A ) Collector-Base Cutoff Current
Forward Current Transfer Ratio
VCE = 10 V dc; IC = 1 mA dc
TA = +150oC VCB = 50 V dc
TA = -55oC 2N5795, 2N5795A 2N5796, 2N5796U, 2N5796UC 2N5796, 2N5796AUC
Symbol Units Min.
hFE3-1 —–– hFE3-2
0.9
|VBE1-VBE2| mV dc
—
ICBO3
µA
—
hFE7
16 40 40
Rev. V3 Max. 1.1
10 10
Collector One to Collector Two Leakage Current
V(1C-2C) = +50 V dc
1(1C-2C) nA dc
Dynamic Characteristics
Magnitude of Common Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 20 mA dc, VCE = 20 V dc, f = 100 MHz | hFE | -
Open Circuit Output Capacitance VCB = 10 V dc, IE = 0 mA , 100 kHz ≤ f ≤ 1 MHz Cobo pF
Input Capacitance (Output Open-Circuited)
VEB = 2.0 V dc; IC = 0 mA; 100 kHz ≤ f ≤ 1 MHz Cibo pF
Switching Characteristics
Turn-On Time (saturated)
VCC = 30 V dc; IC = 150 mA dc; IB1 = 15 mA dc ton
ns
2.0 — —
—
Turn-Off Time (saturated)
VCC = 30 Vdc; IC = 150 mA dc; IB1 = IB2 = 15 mA dc toff
ns
—
+1
10 8.0 30
50 140
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transistors
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Symbol VCEO
Value 60 V dc
Rev. V3
Collector - Base Voltage
VCBO
60 V dc
Emitter - Base Voltage
Collector Current Total Power Dissipation
@ TA = +25°C One Section Total Device
Operating & Storage Temperature Range
VEBO IC
P (1) (2) T
TJ, TSTG
5.0 V dc -600 mA dc
0.5 W 0.6 W -65°C to +175°C
Thermal Characteristics
Types
2N5795, 2N5796 2N5795A, 2N5796A
RᶱJA
RᶱJA
One Section Both Sections
oC/W (2) (3) 350 350
oC/W (2) (3) 290 290
RᶱJSP One Section
oC/W (2) (3)
RᶱJSP
RᶱJPCB
RᶱJPCB
Both Sections One Section Both Sections
oC/W (2) (3)
oC/W (2) (3)
oC/W (2) (3)
2N5796U 2N5796AU
110 90 350 290 110 90 350 290
(1) For TA > 25oC, derate linearly 2.86 mW/oC one section, 3.43 mW/oC total. (2) For 2N5795, 2N5795A, 2N5796, 2N5796A, 2N5796U devices. (3) For thermal impedance curves see figures 4, 5 and 6 of MIL-PRF-19500/496
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
[email protected]
2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U
PNP Dual Silicon Transist.