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2N5796U Dataheets PDF



Part Number 2N5796U
Manufacturers VPT
Logo VPT
Description PNP Dual Silicon Transistors
Datasheet 2N5796U Datasheet2N5796U Datasheet (PDF)

2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496 • TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics (+25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - .

  2N5796U   2N5796U


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2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/496 • TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V3 Electrical Characteristics (+25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Saturation Voltage Forward-Current Transfer Ratio (Gain Ratio) (2N5795A, 2N5796A) Test Conditions IC = 10 mA dc VCB = 60 V dc VCB = 50 V dc VEB = 5.0 V dc VEB = 3.0 V dc 2N5795, 2N5795A VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 300 mA dc VCE = 1.0 V dc; IC = 150 mA dc 2N5796, 2N5796U 2N5796A VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 1.0 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 300 mA dc VCE = 1.0 V dc; IC = 150 mA dc IC = 150 mA dc; IB = 15 mA dc IC = 500 mA dc; IB = 50 mA dc IC = 150 mA dc; IB = 15 mA dc IC = 500 mA dc; IB = 50 mA dc VCE = 10 V dc; IC = 10 mA dc Symbol Units Min. Max. V(BR)CEO V dc ICBO1 ICBO2 IEBO1 IEBO2 µA dc nA dc µA dc nA dc 60 — — — 10 10 10 100 hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE 40 40 40 40 20 20 75 100 100 100 50 50 150 300 VCE(SAT)1 VCE(SAT)2 Vdc VBE(SAT)1 Vdc VBE(SAT)2 Vdc — — — hFE2-1 —–– hFE2-2 0.9 0.4 1.6 1.3 2.6 1.1 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%. 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transistors Electrical Characteristics (+25oC unless otherwise specified) Parameter Test Conditions Forward-Current Transfer Ratio (Gain Ratio) (2N5795A, 2N5796A) VCE = 10 V dc; IC = 10 mA dc Absolute Value of Base Emitter-Voltage Differential (2N5795A, 2N5796A ) Collector-Base Cutoff Current Forward Current Transfer Ratio VCE = 10 V dc; IC = 1 mA dc TA = +150oC VCB = 50 V dc TA = -55oC 2N5795, 2N5795A 2N5796, 2N5796U, 2N5796UC 2N5796, 2N5796AUC Symbol Units Min. hFE3-1 —–– hFE3-2 0.9 |VBE1-VBE2| mV dc — ICBO3 µA — hFE7 16 40 40 Rev. V3 Max. 1.1 10 10 Collector One to Collector Two Leakage Current V(1C-2C) = +50 V dc 1(1C-2C) nA dc Dynamic Characteristics Magnitude of Common Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 20 mA dc, VCE = 20 V dc, f = 100 MHz | hFE | - Open Circuit Output Capacitance VCB = 10 V dc, IE = 0 mA , 100 kHz ≤ f ≤ 1 MHz Cobo pF Input Capacitance (Output Open-Circuited) VEB = 2.0 V dc; IC = 0 mA; 100 kHz ≤ f ≤ 1 MHz Cibo pF Switching Characteristics Turn-On Time (saturated) VCC = 30 V dc; IC = 150 mA dc; IB1 = 15 mA dc ton ns 2.0 — — — Turn-Off Time (saturated) VCC = 30 Vdc; IC = 150 mA dc; IB1 = IB2 = 15 mA dc toff ns — +1 10 8.0 30 50 140 2 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transistors Absolute Maximum Ratings Ratings Collector - Emitter Voltage Symbol VCEO Value 60 V dc Rev. V3 Collector - Base Voltage VCBO 60 V dc Emitter - Base Voltage Collector Current Total Power Dissipation @ TA = +25°C One Section Total Device Operating & Storage Temperature Range VEBO IC P (1) (2) T TJ, TSTG 5.0 V dc -600 mA dc 0.5 W 0.6 W -65°C to +175°C Thermal Characteristics Types 2N5795, 2N5796 2N5795A, 2N5796A RᶱJA RᶱJA One Section Both Sections oC/W (2) (3) 350 350 oC/W (2) (3) 290 290 RᶱJSP One Section oC/W (2) (3) RᶱJSP RᶱJPCB RᶱJPCB Both Sections One Section Both Sections oC/W (2) (3) oC/W (2) (3) oC/W (2) (3) 2N5796U 2N5796AU 110 90 350 290 110 90 350 290 (1) For TA > 25oC, derate linearly 2.86 mW/oC one section, 3.43 mW/oC total. (2) For 2N5795, 2N5795A, 2N5796, 2N5796A, 2N5796U devices. (3) For thermal impedance curves see figures 4, 5 and 6 of MIL-PRF-19500/496 3 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: [email protected] 2N5795, 2N5795A, 2N5796 2N5796A, 2N5796AU, 2N5796U PNP Dual Silicon Transist.


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