K1358

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 900 ±30 Drain Current-continuous@ TC=25℃ 9 Total Dissipation@TC=25℃ 150 Max. Operating Junction Temperature 150 Storage Temperature Range -55~150 V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 0.833 ℃/W Thermal Resistance,Junction to Ambient 50 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK1358 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Voltage IF=9A; VGS=0 MIN TYP MAX UNIT 900 V 1.5 3.5 V 1.1 1.4 Ω ±100 nA 300 uA 2.0 V tr Rise time 25 50 ns ton Turn-on time tf Fall time toff Turn-off time VGS=10V;ID=4A;RL=100Ω 40 80 20 4...