MOSFET Transistor. K1358 Datasheet

K1358 Datasheet PDF, Equivalent


Part Number

K1358

Description

N-Channel MOSFET Transistor

Manufacture

INCHANGE

Total Page 2 Pages
PDF Download
Download K1358 Datasheet PDF


K1358 Datasheet
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1358
DESCRIPTION
·Drain Current ID= 9A@ TC=25
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
900
±30
Drain Current-continuous@ TC=25
9
Total Dissipation@TC=25
150
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
0.833 /W
Thermal Resistance,Junction to Ambient 50 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

K1358 Datasheet
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1358
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0
VSD Diode Forward Voltage
IF=9A; VGS=0
MIN TYP MAX UNIT
900 V
1.5 3.5 V
1.1 1.4
Ω
±100 nA
300 uA
2.0 V
tr Rise time
25 50 ns
ton Turn-on time
tf Fall time
toff Turn-off time
VGS=10V;ID=4A;RL=100Ω
40 80
20 40
100 200
ns
ns
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Features Datasheet pdf INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vol tage- : VDSS= 900V(Min) ·Fast Switchin g Speed APPLICATIONS ·Designed for hi gh voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM BOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS =0) Gate-Source Voltage 900 ±30 Drai n Current-continuous@ TC=25℃ 9 Tota l Dissipation@TC=25℃ 150 Max. Opera ting Junction Temperature 150 Storage Temperature Range -55~150 V V A W ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 0. 833 ℃/W Thermal Resistance,Junction to Ambient 50 ℃/W isc website:www. iscsemi.cn 1 isc & iscsemi is register ed trademark PDF pdfFactory Pro www.f ineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Produ ct Specification 2SK1358 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDI.
Keywords K1358, datasheet, pdf, INCHANGE, N-Channel, MOSFET, Transistor, 1358, 358, 58, K135, K13, K1, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)