MJE13071 Transistors Datasheet

MJE13071 Datasheet PDF, Equivalent


Part Number

MJE13071

Description

Silicon NPN Power Transistors

Manufacture

INCHANGE

Total Page 2 Pages
Datasheet
Download MJE13071 Datasheet


MJE13071
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)- MJE13070
= 450V(Min)- MJE13071
· Collector-Emitter Saturation Voltage-
: VCE(sat) = 3.0V(Min)@IC= 5A
APPLICATIONS
·Designed for high-voltage, high-speed, power switching in
inductive circuits, where fall time is critical.They are partic-
ularly suited for line-operated switchmode applications su-
ch as switching regulators , inverters , DC-DC converter,
motor controls, solenoid drive and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter
Voltage
MJE13070
MJE13071
650
750
V
VCEO
Collector-Emitter
Voltage
MJE13070
MJE13071
400
450
V
VEBO
IC
Emitter-Base Voltage
Collector Current-Continuous
6V
5A
ICM Collector Current-Peak
8A
IB Base Current
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
2A
80 W
150
Tstg Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.56 /W
isc Product Specification
MJE13070/13071
isc websitewww.iscsemi.cn
1

MJE13071
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
MJE13070/13071
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
V(BR)CEO
Collector-Emitter
Breakdown Voltage
MJE13070
MJE13071
IC= 0.1A ;IB= 0
400
V
450
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
IC= 3A; IB= 0.6A;TC=100
1.0
2.0
V
VCE(sat)-2
VBE(sat)
ICEV
IEBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC= 5A; IB= 1A
IC= 3A; IB= 0.6A
IC= 3A; IB= 0.6A;TC=100
VCEV=Rated Value;VBE(off)= 1.5V
VCEV=Rated Value;VBE(off)=1.5V;TC=100
VEB= 6V; IC=0
3.0 V
1.5
1.5
V
0.5
2.5
mA
1.0 mA
hFE DC Current Gain
IC= 3A ; VCE= 5V
8
COB Output Capacitance
IE= 0; VCB= 10V, ftest= 1.0kHz
250 pF
Switching Times
td Delay Time
tr Rise Time
tstg Storage Time
tf Fall Time
IC= 3A; IB1= 0.4A;VBE(off)= 5V;
VCC= 250V; tp= 30μs,Duty Cycle1%
0.05 μs
0.4 μs
1.5 μs
0.5 μs
isc websitewww.iscsemi.cn
2


Features INCHANGE Semiconductor isc Silicon NPN P ower Transistors DESCRIPTION ·Collect or-Emitter Sustaining Voltage- : VCEO(S US) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071 · Collector-Emitter Saturatio n Voltage: VCE(sat) = 3.0V(Min)@IC= 5A APPLICATIONS ·Designed for high-voltag e, high-speed, power switching in induc tive circuits, where fall time is criti cal.They are particularly suited for li ne-operated switchmode applications suc h as switching regulators , inverters , DC-DC converter, motor controls, solen oid drive and deflection circuits. ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collect or-Emitter Voltage MJE13070 MJE13071 650 750 V VCEO Collector-Emitter Vol tage MJE13070 MJE13071 400 450 V VE BO IC Emitter-Base Voltage Collector C urrent-Continuous 6V 5A ICM Collector Current-Peak 8A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS .
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