Power Transistors. MJE13071 Datasheet

MJE13071 Transistors. Datasheet pdf. Equivalent

MJE13071 Datasheet
Recommendation MJE13071 Datasheet
Part MJE13071
Description Silicon NPN Power Transistors
Feature MJE13071; isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 4.
Manufacture INCHANGE
Datasheet
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INCHANGE MJE13071
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)- MJE13070
= 450V(Min)- MJE13071
· Collector-Emitter Saturation Voltage-
: VCE(sat) = 3.0V(Min)@IC= 5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-voltage, high-speed, power switching in
inductive circuits, where fall time is critical.They are partic-
ularly suited for line-operated switchmode applications su-
ch as switching regulators , inverters , DC-DC converter,
motor controls, solenoid drive and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base
Voltage
MJE13070
650
V
MJE13071
750
VCEO
Collector-Emitter
Voltage
MJE13070
400
V
MJE13071
450
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
2
A
80
W
150
Tstg
Storage Temperature Range
-65~150
MJE13070/13071
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
isc Websitewww.iscsemi.com
MAX UNIT
1.56 /W
1 isc & iscsemi is registered trademark



INCHANGE MJE13071
isc Silicon NPN Power Transistors
MJE13070/13071
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter
Breakdown Voltage
MJE13070
MJE13071
IC= 50mA ;IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
IC= 3A; IB= 0.6A;TC=100
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 3A; IB= 0.6A
IC= 3A; IB= 0.6A;TC=100
VCB=Rated Value;IE= 0
VCB=Rated Value;IE= 0;TC=100
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE
DC Current Gain
IC= 3A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1.0kHz
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
IC= 3A; IB1= 0.4A;VBE(off)= 5V;
VCC= 250V; tp= 30μs,Duty Cycle1%
tf
Fall Time
MIN MAX UNIT
400
V
450
1.0
2.0
V
3.0
V
1.5
1.5
V
0.5
2.5
mA
1.0 mA
8
100
pF
0.05 μs
0.4 μs
1.5 μs
0.5 μs
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



INCHANGE MJE13071
isc Silicon NPN Power Transistors
MJE13070/13071
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc Websitewww.iscsemi.com
isc & iscsemi is registered trademark
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