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TIP33C Dataheets PDF



Part Number TIP33C
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet TIP33C DatasheetTIP33C Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌComplementary to TIP34C. ᴌRecommended for 45Wᴕ50W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 100 100 6 10 3 80 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ E TIP.

  TIP33C   TIP33C



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SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌComplementary to TIP34C. ᴌRecommended for 45Wᴕ50W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING 100 100 6 10 3 80 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ E TIP33C EPITAXIAL PLANAR NPN TRANSISTOR AQ B K F I J GH C D d PP 1 23 1. BASE L DIM MILLIMETERS A 15.9 MAX B 4.8 MAX C 20.0+_ 0.3 D 2.0+_ 0.3 d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX H 9.0 I 4.5 T MJ 2.0 K 1.8 MAX L 20.5+_ 0.5 M 2.8 P 5.45+_ 0.2 Q Φ3.2+_ 0.2 T 0.6+0.3/-0.1 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-3P(N) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current IEBO Collector-Emitter Breakdown Voltage V(BR)CEO DC Current Gain hFE (Note) Collector-Emitter Saturation Voltage VCE(sat) Transition Frequency fT Collector Output Capacitance Cob Note : hFE Classification R:55~110, O:80~160 TEST CONDITION VCB=100V, IE=0 VEB=6V, IC=0 IC=25mA, IB=0 VCE=4V, IC=2A IC=4A, IB=0.4A VCE=12V, IC=0.5A VCB=10V, IE=0, f=1MHz MIN. - 100 55 - TYP. 20 150 MAX. 10 10 160 1.0 - UNIT ỌA ỌA V V MHz pF 2001. 1. 10 Revision No : 1 1/2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TIP33C VCE(sat) - I C 1 COMMON EMITTER 0.5 I C /CB =10 0.3 0.1 0.05 0.03 0.01 0.001 0.01 0.1 1 BASE CURRENT I C (A) 10 TRANSITION THERMAL RESISTANCE r th ( C/W) r th - t w 10 CURVES SHOULD BE APPLIED IN 5 THERMAL LIMITED AREA. (SIGLE NONREPETITIVE PULSE) 3 1 NO HEAT SINK 0.5 0.3 0.1 1 3 10 30 100 300 1K 2K PULSE WIDTH t w (sec) h FE - I C 1K VCE =4V 500 300 Tc=125 C 100 Tc=25 C Tc=-30 C 50 30 10 0.001 0.01 0.1 1 COLLECTOR CURRENT I C (A) 10 CUT-OFF FREQUENCY f T (MHz) fT - I E 30 VCE =-12V 20 TcT=c1=T225c5=C-C30 C 10 0 -0.01 -0.03 -0.1 -0.3 -1 -3 EMITTER CURRENT I E (A) -10 DC CURRENT GAIN hFE MAXIMUM POWER DISSIPATION PC (W) 100 80 60 40 20 0 0 Pc - Ta Tc=Ta INFINITE HEAT SINK 25 50 75 100 125 AMBIENT TEMPERATURE Ta ( C) 150 2001. 1. 10 Revision No : 1 COLLECTOR CURRENT I C (A) SAFE OPERATING AREA -30 I C MAX.(PULSED)* -10 -5 -3 I C MAX (CONTINUOUS) DCTcO=P2E51R0CAmTSI*ON -1 -0.5 -0.3 -0.1 -0.05 -0.03 -1 * SINGLE NONREPETITIVE PLUSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -3 -10 -30 300µS* 1.0mS* -100 -200 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/2 .


BF173 TIP33C JB3030


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