2SK3944 MOSFET Datasheet

2SK3944 Datasheet PDF, Equivalent


Part Number

2SK3944

Description

N-Channel Silicon MOSFET

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download 2SK3944 Datasheet


2SK3944
2SK3944
Ordering number : ENN8330
2SK3944
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (250mm20.8mm)
Tc=25°C
Ratings
60
±20
2
8
1
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : LM
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=1A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
1.2
0.75
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
1.5 S
260 340 m
340 480 m
150 pF
19 pF
13 pF
7 ns
3.7 ns
19.5
ns
12.5
ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Downloaded from Arrow.com.
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SK3944/D

2SK3944
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7007-003
Top View
4.5
1.6
1
0.4
2
0.5
1.5
3.0
3
2SK3944
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=2A
VDS=30V, VGS=10V, ID=2A
VDS=30V, VGS=10V, ID=2A
IS=2A, VGS=0V
Ratings
min typ max
Unit
4.8 nC
1.0 nC
1.0 nC
0.93
1.2 V
Switching Time Test Circuit
1.5
0.4
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=1A
RL=30
D VOUT
2SK3944
P.G 50S
Bottom View
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
ID -- VDS
1.5
3.0
VDS=10V
ID -- VGS
3.0V
2.5
1.2
0.9
0.6
2.5V
0.3
VGS=2.0V
0
0 0.3 0.6 0.9 1.2 1.5
Drain-to-Source Voltage, VDS -- V IT07489
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT07490
Rev.0 I Page 2 of 4 I www.onsemi.com
Downloaded from Arrow.com.


Features 2SK3944 Ordering number : ENN8330 2SK3 944 N-Channel Silicon MOSFET General-P urpose Switching Device Applications F eatures • Low ON-resistance. • Ultr ahigh-speed switching. • 4V drive. S pecifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu rrent (DC) Drain Current (Pulse) Allowa ble Power Dissipation Channel Temperatu re Storage Temperature Symbol VDSS VGS S ID IDP PD Tch Tstg Conditions PW≤1 0µs, duty cycle≤1% Mounted on a cera mic board (250mm2✕0.8mm) Tc=25°C Ra tings 60 ±20 2 8 1 3.5 150 --55 to +15 0 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source B reakdown Voltage Zero-Gate Voltage Drai n Current Gate-to-Source Leakage Curren t Cutoff Voltage Forward Transfer Admit tance Static Drain-to-Source On-State R esistance Input Capacitance Output Capa citance Reverse Transfer Capacitance Tu rn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : LM V(BR)DSS ID.
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