N-Channel Silicon MOSFET
2SK3944
Ordering number : ENN8330
2SK3944
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Fea...
Description
2SK3944
Ordering number : ENN8330
2SK3944
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2✕0.8mm) Tc=25°C
Ratings 60
±20 2 8 1
3.5 150 --55 to +150
Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : LM
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2
Ciss
Coss
Crss
td(on) tr
td(off) tf
ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=1A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min 60
1.2 0.75
Ratings typ
max
Unit
V
1 µA
±10 µA
2.6 V
1.5 S
260 340 mΩ
340 480 mΩ
150 pF
19 pF
13 pF
7 ns
3.7 ns
19.5
ns
12.5
ns
C...
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