Silicon MOSFET. 2SK3944 Datasheet

2SK3944 MOSFET. Datasheet pdf. Equivalent

2SK3944 Datasheet
Recommendation 2SK3944 Datasheet
Part 2SK3944
Description N-Channel Silicon MOSFET
Feature 2SK3944; 2SK3944 Ordering number : ENN8330 2SK3944 N-Channel Silicon MOSFET General-Purpose Switching Devi.
Manufacture ON Semiconductor
Datasheet
Download 2SK3944 Datasheet





ON Semiconductor 2SK3944
2SK3944
Ordering number : ENN8330
2SK3944
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (250mm20.8mm)
Tc=25°C
Ratings
60
±20
2
8
1
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : LM
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=1A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
1.2
0.75
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
1.5 S
260 340 m
340 480 m
150 pF
19 pF
13 pF
7 ns
3.7 ns
19.5
ns
12.5
ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Downloaded from Arrow.com.
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SK3944/D



ON Semiconductor 2SK3944
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7007-003
Top View
4.5
1.6
1
0.4
2
0.5
1.5
3.0
3
2SK3944
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=2A
VDS=30V, VGS=10V, ID=2A
VDS=30V, VGS=10V, ID=2A
IS=2A, VGS=0V
Ratings
min typ max
Unit
4.8 nC
1.0 nC
1.0 nC
0.93
1.2 V
Switching Time Test Circuit
1.5
0.4
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=1A
RL=30
D VOUT
2SK3944
P.G 50S
Bottom View
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
ID -- VDS
1.5
3.0
VDS=10V
ID -- VGS
3.0V
2.5
1.2
0.9
0.6
2.5V
0.3
VGS=2.0V
0
0 0.3 0.6 0.9 1.2 1.5
Drain-to-Source Voltage, VDS -- V IT07489
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT07490
Rev.0 I Page 2 of 4 I www.onsemi.com
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ON Semiconductor 2SK3944
2SK3944
RDS(on) -- VGS
600
Ta=25°C
550 ID=1A
500
450
400
350
300
250
200
150
0 2 4 6 8 10 12 14 16
Gate-to-Source Voltage, VGS -- V
5 yfs-- ID
VDS=10V
3
18 20
IT09795
2
1.0
7
5
Ta=
--25°C
75°C
25°C
3
2
0.1
0.01
5
2 3 5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
23 5
IT09797
3
2
10
7
5
3
2
1.0
0.1
2
10
VDS=30V
ID=2A
8
td(off)
tf
td(on)
tr
3 5 7 1.0
Drain Current, ID -- A
VGS -- Qg
VDD=30V
VGS=10V
23
5
IT07495
6
4
2
0
0123456
Total Gate Charge, Qg -- nC
IT09798
RDS(on) -- Ta
600
550
500
450
400
350
300
I DI=D1=A1,AV, VGSG=S4=V10V
250
200
150
100
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09796
7 IS -- VSD
5 VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.4
5
3
2
0.6 0.8 1.0 1.2
Diode Forward Voltage, VSD -- V IT07494
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
3
Coss
2
Crss
10
7
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT07496
ASO
2
10 IDP=8A
<10µs
7
5
100µs
3
2
1.0
7
5
3
2
0.1
ID=2A
Operation in this
area is limited by
RDS(oDnC).operation1(0T0cm=12s05m°1Csm)s
7
5
3
2 Tc=25°C
0.01 Single pulse
0.1 2 3 5 7 1.0
2 3 5 7 10
23
Drain-to-Source Voltage, VDS -- V
5 7 100
IT09799
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