Schottky Diode. C3D16065D1 Datasheet

C3D16065D1 Diode. Datasheet pdf. Equivalent

C3D16065D1 Datasheet
Recommendation C3D16065D1 Datasheet
Part C3D16065D1
Description Silicon Carbide Schottky Diode
Feature C3D16065D1; C3D16065D1 Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 650 Volt Schottky Rectifier •.
Manufacture CREE
Datasheet
Download C3D16065D1 Datasheet





CREE C3D16065D1
C3D16065D1
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
650 Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Package
VRRM
= 650 V
IF (TC=147˚C) = 16 A
Qc =   40 nC
TO-247-3
Part Number
C3D16065D1
Package
TO-247-3
Marking
C3D16065D1
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value
Test Conditions
VRRM Repetitive Peak Reverse Voltage
VDC DC Blocking Voltage
IF Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Peak Forward Surge Current
Ptot Power Dissipation
∫i2dt i2t value
TJ , Tstg
Operating Junction and Storage Temperature
TO-220 Mounting Torque
650 V
650 V
43 TC=25˚C
20 A TC=135˚C
16 TC=147˚C
57
33
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC-110˚C, tP=10 ms, Half Sine Pulse
160
148
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
173
75
W
TC=25˚C
TC=110˚C
128
110
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
-55 to +175 ˚C
1 Nm M3 Screw
8.8 lbf-in 6-32 Screw
Note
Fig. 3
Fig. 8
Fig. 4
1 C3D16065D1 Rev. -, 08-2019



CREE C3D16065D1
Electrical Characteristics
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.0
1.8
2.4
V
IF = 16 A TJ=25°C
IF = 16 A TJ=175°C
18
38
95
378
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
40
nC
VR = 400 V, IF = 16 A
TJ = 25°C
740 VR = 0 V, TJ = 25°C, f = 1 MHz
74 pF VR = 200 V, TJ = 25˚C, f = 1 MHz
68 VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
6
μJ VR = 400 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.86
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
45
40 TJ = -55°C
TJ = 25°C
35 TJ = 75°C
30
TJ = 125°C
TJ = 175°C
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
FowardVVVFoF(ltV(aV)g)e, VF (V)
Figure 1. Forward Characteristics
2 C3D16065D1 Rev. -, 08-2019
400
350
300
250
200
150
100
50
0
0
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
TJ = -55 °C
200 400 600 800 1000 1200
ReverseVVRol(tVag)e, VR (V)
Figure 2. Reverse Characteristics



CREE C3D16065D1
Typical Performance
140
120
100
80
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
60
40
20
0
25 50 75 100 125 150
TTCC (˚°CC)
Figure 3. Current Derating
70
Conditions:
60 TJ = 25 °C
175
50
40
30
20
10
0
0 100 200 300 400 500 600 700
ReverVseRVo(lVta)ge, VR (V)
Figure 5. Total Capacitance Charge vs. Reverse Voltage
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TTTCCC˚(˚°CCC)
Figure 4. Power Derating
800
Conditions:
700 TJ = 25 °C
Ftest = 1 MHz
600 Vtest = 25 mV
500
400
300
200
100
0
0 1 10 100 1000
ReverseVVRol(tVag)e, VR (V)
Figure 6. Capacitance vs. Reverse Voltage
3 C3D16065D1 Rev. -, 08-2019





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