SCT3040KR MOSFET Datasheet

SCT3040KR Datasheet PDF, Equivalent


Part Number

SCT3040KR

Description

N-channel SiC power MOSFET

Manufacture

ROHM

Total Page 14 Pages
Datasheet
Download SCT3040KR Datasheet


SCT3040KR
SCT3040KR
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID*1
PD
1200V
40mΩ
55A
262W
lOutline
TO-247-4L
lInner circuit
(1) (2)(3)(4)
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lApplication
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C14
SCT3040KR
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Tc = 25°C
Tc = 100°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300ns)
Recommended drive voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
VGS_op*4
Tj
Tstg
Value
1200
55
39
137
-4 to +22
-4 to +26
0 / +18
175
-55 to +175
Unit
V
A
A
A
V
V
V
°C
°C
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50254-SCT3040KR
31.Jul.2019 - Rev.001

SCT3040KR
SCT3040KR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero Gate voltage
Drain current
Gate - Source
leakage current
Gate - Source
leakage current
Gate threshold voltage
Static Drain - Source
on - state resistance
Gate input resistance
VGS = 0V, ID = 1mA
V(BR)DSS Tj = 25°C
Tj = -55°C
VGS = 0V, VDS =1200V
IDSS Tj = 25°C
Tj = 150°C
IGSS+ VGS = +22V, VDS = 0V
IGSS- VGS = -4V, VDS = 0V
VGS (th) VDS = 10V, ID = 10mA
VGS = 18V, ID = 20A
RDS(on) *5 Tj = 25°C
Tj = 150°C
RG f = 1MHz, open drain
Min.
1200
1200
-
-
-
-
2.7
-
-
-
Values
Typ.
-
-
1
2
-
-
-
40
68
7
Max.
-
-
10
-
100
-100
5.6
52
-
-
Unit
V
μA
nA
nA
V
Ω
lThermal resistance
Parameter
Thermal resistance, junction - case
Symbol
RthJC
Values
Min. Typ. Max.
- 0.44 0.57
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 2.56×10 -2
Rth2
1.95×10 -1
K/W
Rth3 2.20×10 -1
Symbol
Cth1
Cth2
Cth3
Value
1.39×10 -3
1.00×10 -2
3.57×10 -2
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50254-SCT3040KR
31.Jul.2019 - Rev.001


Features SCT3040KR N-channel SiC power MOSFET Da tasheet VDSS RDS(on) (Typ.) ID*1 PD 1 200V 40mΩ 55A 262W lOutline TO-247-4L lInner circuit (1) (2)(3)(4) lFeatur es 1) Low on-resistance 2) Fast switchi ng speed 3) Fast reverse recovery 4) Ea sy to parallel 5) Simple to drive 6) Pb -free lead plating ; RoHS compliant lAp plication ・Solar inverters ・DC/DC c onverters ・Switch mode power supplies ・Induction heating ・Motor drives Please note Driver Source and Power Sou rce are not exchangeable. Their exchang e might lead to malfunction. lPackagin g specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering un it (pcs) Taping code Marking Tube 30 C 14 SCT3040KR lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source Voltage Continuous Drain current Tc = 25°C Tc = 100°C Pulsed Drain curre nt Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300ns) Recommended drive voltage Junction tem perature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 V.
Keywords SCT3040KR, datasheet, pdf, ROHM, N-channel, SiC, power, MOSFET, CT3040KR, T3040KR, 3040KR, SCT3040K, SCT3040, SCT304, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)