power MOSFET. SCT3080KR Datasheet

SCT3080KR MOSFET. Datasheet pdf. Equivalent

SCT3080KR Datasheet
Recommendation SCT3080KR Datasheet
Part SCT3080KR
Description N-channel SiC power MOSFET
Feature SCT3080KR; SCT3080KR N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 1200V 80mΩ 31A 165W l.
Manufacture ROHM
Datasheet
Download SCT3080KR Datasheet





ROHM SCT3080KR
SCT3080KR
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID*1
PD
1200V
80mΩ
31A
165W
lOutline
TO-247-4L
lInner circuit
(1) (2)(3)(4)
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lApplication
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C14
SCT3080KR
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Tc = 25°C
Tc = 100°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300ns)
Recommended drive voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
VGS_op*4
Tj
Tstg
Value
1200
31
22
77
-4 to +22
-4 to +26
0 / +18
175
-55 to +175
Unit
V
A
A
A
V
V
V
°C
°C
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
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TSQ50254-SCT3080KR
31.Jul.2019 - Rev.001



ROHM SCT3080KR
SCT3080KR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero Gate voltage
Drain current
Gate - Source
leakage current
Gate - Source
leakage current
Gate threshold voltage
Static Drain - Source
on - state resistance
Gate input resistance
VGS = 0V, ID = 1mA
V(BR)DSS Tj = 25°C
Tj = -55°C
VGS = 0V, VDS =1200V
IDSS Tj = 25°C
Tj = 150°C
IGSS+ VGS = +22V, VDS = 0V
IGSS- VGS = -4V, VDS = 0V
VGS (th) VDS = 10V, ID = 5mA
VGS = 18V, ID = 10A
RDS(on) *5 Tj = 25°C
Tj = 150°C
RG f = 1MHz, open drain
Min.
1200
1200
-
-
-
-
2.7
-
-
-
Values
Typ.
-
-
1
2
-
-
-
80
136
12
Max.
-
-
10
-
100
-100
5.6
104
-
-
Unit
V
μA
nA
nA
V
Ω
lThermal resistance
Parameter
Thermal resistance, junction - case
Symbol
RthJC
Values
Min. Typ. Max.
- 0.70 0.91
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 8.52×10 -2
Rth2
4.15×10 -1
K/W
Rth3 2.06×10 -1
Symbol
Cth1
Cth2
Cth3
Value
1.22×10 -3
6.20×10 -3
3.49×10 -2
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
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© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50254-SCT3080KR
31.Jul.2019 - Rev.001



ROHM SCT3080KR
SCT3080KR
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Total Gate charge
Gate - Source charge
Gate - Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
gfs *5
Ciss
Coss
Crss
Co(er)
Qg *5
Qgs *5
Qgd *5
VDS = 10V, ID = 10A
VGS = 0V
VDS = 800V
f = 1MHz
VGS = 0V
VDS = 0V to 600V
VDS = 600V
ID = 10A
VGS = 18V
See Fig. 1-1.
td(on) *5
tr *5
VDS = 600V
ID = 10A
VGS = 0V/+18V
td(off) *5
tf *5
RG = 0Ω, L = 750μH
Lσ = 50nH, Cσ = 10pF
See Fig. 2-1, 2-2, 2-3.
Eon *5
Eon includes diode
reverse recovery.
Eoff *5
Datasheet
Values
Min. Typ. Max.
- 4.4 -
- 785 -
- 75 -
- 35 -
- 74 -
Unit
S
pF
pF
- 60 -
- 11 - nC
- 31 -
-5-
- 13 -
ns
- 20 -
- 12 -
- 149
-
μJ
- 12
-
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
3/12
TSQ50254-SCT3080KR
31.Jul.2019 - Rev.001





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