SCT3080KR

SCT3080KR N-channel SiC power MOSFET VDSS RDS(on) (Typ.) ID*1 PD 1200V 80mΩ 31A 165W lOutline TO-247-4L lInner circuit (1) (2)(3)(4) Datasheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lApplication ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C15 SCT3080KR lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Drain - Source Voltage Continuous Drain current Pulsed Drain current (Tc = 25°C) Tc = 25°C Tc = 100°C Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300ns) Recommended drive voltage Virtual Junction temperature VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tvj Range of storage temperature Tstg Value Unit 1200 V 31 A 22 A 77 A -4 to +22 V -4 to +26 V 0 / +18 V 175 °C -55 to +175 °C www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50214-SCT3080KR 9.Nov.2022 - Rev.003 SCT3080KR lElectrical characteristics (Tvj = 25°C unless otherwise specified) Parameter Drain - Source breakdown voltage Zero Gate voltage Drain current Gate - Source leakage current Gat...