SCT3080KR MOSFET Datasheet

SCT3080KR Datasheet PDF, Equivalent


Part Number

SCT3080KR

Description

N-channel SiC power MOSFET

Manufacture

ROHM

Total Page 14 Pages
Datasheet
Download SCT3080KR Datasheet


SCT3080KR
SCT3080KR
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID*1
PD
1200V
80mΩ
31A
165W
lOutline
TO-247-4L
lInner circuit
(1) (2)(3)(4)
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lApplication
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C14
SCT3080KR
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Tc = 25°C
Tc = 100°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300ns)
Recommended drive voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
VGS_op*4
Tj
Tstg
Value
1200
31
22
77
-4 to +22
-4 to +26
0 / +18
175
-55 to +175
Unit
V
A
A
A
V
V
V
°C
°C
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50254-SCT3080KR
31.Jul.2019 - Rev.001

SCT3080KR
SCT3080KR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero Gate voltage
Drain current
Gate - Source
leakage current
Gate - Source
leakage current
Gate threshold voltage
Static Drain - Source
on - state resistance
Gate input resistance
VGS = 0V, ID = 1mA
V(BR)DSS Tj = 25°C
Tj = -55°C
VGS = 0V, VDS =1200V
IDSS Tj = 25°C
Tj = 150°C
IGSS+ VGS = +22V, VDS = 0V
IGSS- VGS = -4V, VDS = 0V
VGS (th) VDS = 10V, ID = 5mA
VGS = 18V, ID = 10A
RDS(on) *5 Tj = 25°C
Tj = 150°C
RG f = 1MHz, open drain
Min.
1200
1200
-
-
-
-
2.7
-
-
-
Values
Typ.
-
-
1
2
-
-
-
80
136
12
Max.
-
-
10
-
100
-100
5.6
104
-
-
Unit
V
μA
nA
nA
V
Ω
lThermal resistance
Parameter
Thermal resistance, junction - case
Symbol
RthJC
Values
Min. Typ. Max.
- 0.70 0.91
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 8.52×10 -2
Rth2
4.15×10 -1
K/W
Rth3 2.06×10 -1
Symbol
Cth1
Cth2
Cth3
Value
1.22×10 -3
6.20×10 -3
3.49×10 -2
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50254-SCT3080KR
31.Jul.2019 - Rev.001


Features SCT3080KR N-channel SiC power MOSFET Da tasheet VDSS RDS(on) (Typ.) ID*1 PD 1 200V 80mΩ 31A 165W lOutline TO-247-4L lInner circuit (1) (2)(3)(4) lFeatu res 1) Low on-resistance 2) Fast switch ing speed 3) Fast reverse recovery 4) E asy to parallel 5) Simple to drive 6) P b-free lead plating ; RoHS compliant lA pplication ・Solar inverters ・DC/DC converters ・Switch mode power supplie s ・Induction heating ・Motor drives Please note Driver Source and Power So urce are not exchangeable. Their exchan ge might lead to malfunction. lPackagi ng specifications Packing Reel size (mm ) Tape width (mm) Type Basic ordering u nit (pcs) Taping code Marking Tube 30 C14 SCT3080KR lAbsolute maximum rating s (Ta = 25°C) Parameter Drain - Sourc e Voltage Continuous Drain current Tc = 25°C Tc = 100°C Pulsed Drain curr ent Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300ns) Recommended drive voltage Junction te mperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 .
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