N-channel SiC power MOSFET
SCT3105KR
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.) ID*1 PD
1200V 105mΩ
24A 134W
lOutline
TO-247-4L
l...
Description
SCT3105KR
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.) ID*1 PD
1200V 105mΩ
24A 134W
lOutline
TO-247-4L
lInner circuit
(1) (2)(3)(4)
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant
lApplication ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives
Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction.
lPackaging specifications Packing Reel size (mm) Tape width (mm)
Type Basic ordering unit (pcs) Taping code Marking
Tube
30 C14
SCT3105KR
lAbsolute maximum ratings (Ta = 25°C) Parameter
Drain - Source Voltage
Continuous Drain current
Tc = 25°C Tc = 100°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300ns)
Recommended drive voltage
Junction temperature
Range of storage temperature
Symbol
VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj
Tstg
Value 1200
24 17 60 -4 to +22 -4 to +26 0 / +18 175 -55 to +175
Unit V A A A V V V °C °C
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© 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001
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TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001
SCT3105KR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
Zero Gate voltage Drain current
Gate - Source leakage current Gate - Source leakage current Gate threshold voltage
Static Dra...
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