SCT3060AR

SCT3060AR N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 60mΩ 39A 165W lOutline TO-247-4L lInner circuit (1) (2)(3)(4) lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lApplication ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C14 SCT3060AR lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source Voltage Continuous Drain current Tc = 25°C Tc = 100°C Pulsed Drain current Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300ns) Recommended drive voltage Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg Value 650 39 27 97 -4 to +22 -4 to +26 0 / +18 175 -55 to +175 Unit V A A A V V V °C °C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 TSQ50254-SCT3060AR 31.Jul.2019 - Rev.001 SCT3060AR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Drain - Source breakdown voltage VGS = 0V, ID = 1mA V(BR)DSS Tj = 25°C Tj = -55°C 650 650 - - Zero Gate voltage Drain current Gate - S...