SCT3060AR MOSFET Datasheet

SCT3060AR Datasheet PDF, Equivalent


Part Number

SCT3060AR

Description

N-channel SiC power MOSFET

Manufacture

ROHM

Total Page 14 Pages
Datasheet
Download SCT3060AR Datasheet


SCT3060AR
SCT3060AR
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID*1
PD
650V
60mΩ
39A
165W
lOutline
TO-247-4L
lInner circuit
(1) (2)(3)(4)
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lApplication
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C14
SCT3060AR
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Tc = 25°C
Tc = 100°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300ns)
Recommended drive voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
VGS_op*4
Tj
Tstg
Value
650
39
27
97
-4 to +22
-4 to +26
0 / +18
175
-55 to +175
Unit
V
A
A
A
V
V
V
°C
°C
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50254-SCT3060AR
31.Jul.2019 - Rev.001

SCT3060AR
SCT3060AR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown
voltage
VGS = 0V, ID = 1mA
V(BR)DSS Tj = 25°C
Tj = -55°C
650 -
650 -
-
-
Zero Gate voltage
Drain current
Gate - Source
leakage current
Gate - Source
leakage current
VGS = 0V, VDS =650V
IDSS Tj = 25°C
Tj = 150°C
IGSS+ VGS = +22V, VDS = 0V
IGSS- VGS = -4V, VDS = 0V
-
-
-
-
1 10
2-
- 100
- -100
Gate threshold voltage
VGS (th) VDS = 10V, ID = 6.67mA 2.7 - 5.6
Static Drain - Source
on - state resistance
VGS = 18V, ID = 13A
RDS(on) *5 Tj = 25°C
Tj = 150°C
- 60 78
- 86 -
Gate input resistance
RG f = 1MHz, open drain - 12 -
Unit
V
μA
nA
nA
V
Ω
lThermal resistance
Parameter
Thermal resistance, junction - case
Symbol
RthJC
Values
Min. Typ. Max.
- 0.70 0.91
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 8.52×10 -2
Rth2
4.15×10 -1
K/W
Rth3 2.06×10 -1
Symbol
Cth1
Cth2
Cth3
Value
1.22×10 -3
6.20×10 -3
3.49×10 -2
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50254-SCT3060AR
31.Jul.2019 - Rev.001


Features SCT3060AR N-channel SiC power MOSFET Da tasheet VDSS RDS(on) (Typ.) ID*1 PD 6 50V 60mΩ 39A 165W lOutline TO-247-4L lInner circuit (1) (2)(3)(4) lFeature s 1) Low on-resistance 2) Fast switchin g speed 3) Fast reverse recovery 4) Eas y to parallel 5) Simple to drive 6) Pb- free lead plating ; RoHS compliant lApp lication ・Solar inverters ・DC/DC co nverters ・Switch mode power supplies ・Induction heating ・Motor drives P lease note Driver Source and Power Sour ce are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering uni t (pcs) Taping code Marking Tube 30 C1 4 SCT3060AR lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source Voltage Continuous Drain current Tc = 25°C Tc = 100°C Pulsed Drain curren t Gate - Source voltage (DC) Gate - S ource surge voltage (tsurge < 300ns) R ecommended drive voltage Junction temp erature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VG.
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