power MOSFET. SCT3060AR Datasheet

SCT3060AR MOSFET. Datasheet pdf. Equivalent

SCT3060AR Datasheet
Recommendation SCT3060AR Datasheet
Part SCT3060AR
Description N-channel SiC power MOSFET
Feature SCT3060AR; SCT3060AR N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 60mΩ 39A 165W lO.
Manufacture ROHM
Datasheet
Download SCT3060AR Datasheet





ROHM SCT3060AR
SCT3060AR
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID*1
PD
650V
60mΩ
39A
165W
lOutline
TO-247-4L
lInner circuit
(1) (2)(3)(4)
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lApplication
Solar inverters
DC/DC converters
Switch mode power supplies
Induction heating
Motor drives
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C14
SCT3060AR
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Tc = 25°C
Tc = 100°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300ns)
Recommended drive voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge*3
VGS_op*4
Tj
Tstg
Value
650
39
27
97
-4 to +22
-4 to +26
0 / +18
175
-55 to +175
Unit
V
A
A
A
V
V
V
°C
°C
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/12
TSQ50254-SCT3060AR
31.Jul.2019 - Rev.001



ROHM SCT3060AR
SCT3060AR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown
voltage
VGS = 0V, ID = 1mA
V(BR)DSS Tj = 25°C
Tj = -55°C
650 -
650 -
-
-
Zero Gate voltage
Drain current
Gate - Source
leakage current
Gate - Source
leakage current
VGS = 0V, VDS =650V
IDSS Tj = 25°C
Tj = 150°C
IGSS+ VGS = +22V, VDS = 0V
IGSS- VGS = -4V, VDS = 0V
-
-
-
-
1 10
2-
- 100
- -100
Gate threshold voltage
VGS (th) VDS = 10V, ID = 6.67mA 2.7 - 5.6
Static Drain - Source
on - state resistance
VGS = 18V, ID = 13A
RDS(on) *5 Tj = 25°C
Tj = 150°C
- 60 78
- 86 -
Gate input resistance
RG f = 1MHz, open drain - 12 -
Unit
V
μA
nA
nA
V
Ω
lThermal resistance
Parameter
Thermal resistance, junction - case
Symbol
RthJC
Values
Min. Typ. Max.
- 0.70 0.91
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1 8.52×10 -2
Rth2
4.15×10 -1
K/W
Rth3 2.06×10 -1
Symbol
Cth1
Cth2
Cth3
Value
1.22×10 -3
6.20×10 -3
3.49×10 -2
Unit
Ws/K
Tj Rth1
Rth,n
Tc
PD
Cth1
Cth2
Cth,n
Ta
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50254-SCT3060AR
31.Jul.2019 - Rev.001



ROHM SCT3060AR
SCT3060AR
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Total Gate charge
Gate - Source charge
Gate - Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
gfs *5
Ciss
Coss
Crss
Co(er)
Qg *5
Qgs *5
Qgd *5
VDS = 10V, ID = 13A
VGS = 0V
VDS = 500V
f = 1MHz
VGS = 0V
VDS = 0V to 300V
VDS = 300V
ID = 13A
VGS = 18V
See Fig. 1-1.
td(on) *5
tr *5
VDS = 400V
ID = 13A
VGS = 0V/+18V
td(off) *5
tf *5
RG = 0Ω, L = 750μH
Lσ = 50nH, Cσ = 10pF
See Fig. 2-1, 2-2, 2-3.
Eon *5
Eon includes diode
reverse recovery.
Eoff *5
Datasheet
Values
Min. Typ. Max.
- 4.9 -
- 852 -
- 55 -
- 24 -
- 126 -
Unit
S
pF
pF
- 58 -
- 11 - nC
- 31 -
-5-
- 14 -
ns
- 17 -
- 13 -
- 79
-
μJ
- 18
-
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
3/12
TSQ50254-SCT3060AR
31.Jul.2019 - Rev.001





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