SD56150 TRANSISTORS Datasheet

SD56150 Datasheet PDF, Equivalent


Part Number

SD56150

Description

RF POWER TRANSISTORS

Manufacture

STMicroelectronics

Total Page 8 Pages
PDF Download
Download SD56150 Datasheet PDF


SD56150
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
SD56150
RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION, PUSH-
PULL
POUT = 150 W WITH 13 dB gain @ 860 MHz /32V
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
M252
epoxy sealed
ORDER CODE
SD56150
BRANDING
SD56150
DESCRIPTION
The SD56150 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0 GHz.
The SD56150 is designed for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes it
ideal for TV broadcast applications requiring high
linearity.
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS
Power Dissipation (@ Tc = 70 °C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
November, 27 2002
PIN CONNECTION
12
5
1. Drain
2. Drain
3. Source
3
4
4. Gate
5. Gate
Value
65
± 20
17
236
200
-65 to +150
0.55
Unit
V
V
A
W
°C
°C
°C/W
1/8

SD56150
SD56150
ELECTRICAL SPECIFICATION (TCASE = 25 °C)
STATIC (Per Section)
Symbol
Test Conditions
V(BR)DSS VGS = 0 V
IDS = 10 mA
IDSS
VGS = 0 V
VDS = 28 V
IGSS
VGS = 20 V
VDS = 0 V
VGS(Q)
VDS = 28 V
ID = 100 mA
VDS(ON) VGS = 10 V
ID = 3 A
GFS
VDS = 10 V
ID = 3 A
CISS*
VGS = 0 V
VDS = 28 V
f = 1 MHz
COSS
VGS = 0 V
VDS = 28 V
f = 1 MHz
CRSS
VGS = 0 V
* Includes Internal Input Moscap.
VDS = 28 V
f = 1 MHz
DYNAMIC
Symbol
Test Conditions
POUT
VDD = 32 V IDQ = 500 mA
f = 860 MHz
GPS VDD = 32 V IDQ = 500 mA POUT = 150 W f = 860 MHz
ηD VDD = 32 V IDQ = 500 mA POUT = 150 W f = 860 MHz
Load
VDD = 32 V IDQ = 500 mA POUT = 150 W
mismatch ALL PHASE ANGLES
f = 860 MHz
Min.
65
2.0
2.5
Typ.
0.5
255
50
2.9
Max.
1
1
5.0
0.8
4
Unit
V
µA
µA
V
V
mho
pF
pF
pF
Min.
150
13
50
10:1
Typ.
16.5
60
Max.
Unit
W
dB
%
VSWR
IMPEDANCE DATA
D
ZDL
Typical Input
Impedance
G
Zin
Typical Drain
Load Impedance
S
FREQ.
ZIN ()
ZDL()
860 MHz
4.7 - j 5.5
3.6 + j 6.5
880 MHz
4.3 - j 6.9
3.9 + j 7.4
900 MHz
4.5 - j 8.8
4.4 + j 7.8
Measured drain to drain and gate to gate respectively.
2/8


Features N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFE Ts SD56150 RF POWER TRANSISTORS The Ld moST FAMILY PRELIMINARY DATA • EXCEL LENT THERMAL STABILITY • COMMON SOURC E CONFIGURATION, PUSH- PULL • POUT = 150 W WITH 13 dB gain @ 860 MHz /32V BeO FREE PACKAGE • INTERNAL INPUT M ATCHING M252 epoxy sealed ORDER CODE S D56150 BRANDING SD56150 DESCRIPTION T he SD56150 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadb and commercial and industrial applicati ons at frequencies up to 1.0 GHz. The S D56150 is designed for high gain and br oadband performance operating in common source mode at 32 V. Its internal matc hing makes it ideal for TV broadcast ap plications requiring high linearity. A BSOLUTE MAXIMUM RATINGS (TCASE = 25 °C ) Symbol Parameter V(BR)DSS Drain-So urce Voltage VGS Gate-Source Voltage ID Drain Current PDISS Power Dissipat ion (@ Tc = 70 °C) Tj Max. Operating Junction Temperature TSTG Storage Temperature THERMAL DATA Rth(j-c) Junc.
Keywords SD56150, datasheet, pdf, STMicroelectronics, RF, POWER, TRANSISTORS, D56150, 56150, 6150, SD5615, SD561, SD56, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)