PD54003L TRANSISTORS Datasheet

PD54003L Datasheet PDF, Equivalent


Part Number

PD54003L

Description

RF POWER TRANSISTORS

Manufacture

STMicroelectronics

Total Page 8 Pages
PDF Download
Download PD54003L Datasheet PDF


PD54003L
PD54003L
RF POWER TRANSISTORS
The LdmoST PLASTIC FAMILY
ADVANCED DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 3 W WITH 20 dB gain @ 500 MHz
NEW LEADLESS PLASTIC PACKAGE
ESD PROTECTION
SUPPLIED IN TAPE & REEL OF 3K UNITS
DESCRIPTION
The PD54003L is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7 V in common source mode at frequencies of
up to 1 GHz. PD54003L boasts the excellent gain,
linearity and reliability of STH1LV latest
LDMOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT™.
PD54003L’s superior linearity performance makes
it an ideal solution for portable radio.
PowerFLAT(5x5)
ORDER CODE
PD54003L
BRANDING
54003
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
May, 29 2003
Value
25
-0.5 to +15
4
19.5
150
-65 to +150
4.1
Unit
V
V
A
W
°C
°C
°C/W
1/8

PD54003L
PD54003L
ELECTRICAL SPECIFICATION (TCASE = 25 °C)
STATIC (Per Section)
Symbol
IDSS
VGS = 0 V
IGSS
VGS = 20 V
VGS(Q)
VDS = 10 V
VDS(ON) VGS = 10 V
gFS VDS = 10 V
CISS
VGS = 0 V
COSS
VGS = 0 V
CRSS
VGS = 0 V
Test Conditions
VDS = 25 V
VDS = 0 V
ID = 50 mA
ID = 0.5 A
ID = 3.2 A
VDS = 7.5 V
VDS = 7.5 V
VDS = 7.5 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
DYNAMIC
Symbol
POUT
GPS
ηD
Load
mismatch
Test Conditions
VDD = 7.5 V IDQ = 50 mA
VDD = 7.5 V IDQ = 50 mA POUT = 3 W
VDD = 7.5 V IDQ = 50 mA POUT = 3 W
VDD = 9.5 V IDQ = 50 mA POUT = 3 W
ALL PHASE ANGLES
f = 500 MHz
f = 500 MHz
f = 500 MHz
f = 500 MHz
Min.
2.0
Typ.
0.13
TBD
54
43
4.0
Max.
1
1
5.0
0.16
Unit
µA
µA
V
V
mho
pF
pF
pF
Min.
3
16
50
20:1
Typ.
20
55
Max.
Unit
W
dB
%
VSWR
Typical Input
Impedance
G
Zin
SC13140
D
ZDL
Typical Drain
Load Impedance
S
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2
M3
MOISTURE SENSITIVITY LEVEL
Test Methodology
J-STD-020B
Rating
MSL 3
2/8


Features PD54003L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WIT H 20 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS DE SCRIPTION The PD54003L is a common sour ce N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band com mercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L boasts the excellent gain, linearity a nd reliability of STH1LV latest LDMOS t echnology mounted in the innovative lea dless SMD plastic package, PowerFLAT™ . PD54003L’s superior linearity perfo rmance makes it an ideal solution for p ortable radio. PowerFLAT™(5x5) ORDE R CODE PD54003L BRANDING 54003 PIN CO NNECTION TOP VIEW ABSOLUTE MAXIMUM RA TINGS (TCASE = 25 °C) Symbol Parameter V(BR)DSS Drain-Source Voltage VGS Gate.
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