EE-SX1106 Photomicrosensor Datasheet

EE-SX1106 Datasheet PDF, Equivalent


Part Number

EE-SX1106

Description

Photomicrosensor

Manufacture

Omron

Total Page 2 Pages
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EE-SX1106
Photomicrosensor (Transmissive)
EE-SX1106
Be sure to read Precautions on page 25.
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Features
Ultra-compact with a slot width of 3 mm.
PCB mounting type.
High resolution with a 0.4-mm-wide aperture.
Absolute Maximum Ratings (Ta = 25°C)
Two, C0.7
5.4
Four, 0.5
5 min.
Two, C0.2
Internal Circuit
Optical
axis
Two, R1
Four, 0.2
100.1 dia
1.4
0
0.1
dia
Item
Symbol Rated value
Gate Emitter
Forward current
IF
50 mA
(see note 1)
Pulse forward cur- IFP
rent
---
Reverse voltage
VR
5V
Detector
Collector–Emitter VCEO
voltage
30 V
Emitter–Collector VECO
voltage
4.5 V
Collector current IC
30 mA
Collector dissipa- PC
tion
80 mW
(see note 1)
Ambient tem- Operating
Topr
–25°C to 85°C
perature
Storage
Tstg –30°C to 85°C
Soldering temperature
Tsol 260°C
(see note 2)
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Unless otherwise specified,
the tolerances are ±0.2 mm.
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 3 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Rising time
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Symbol
VF
IR
λP
IL
ID
ILEAK
VCE (sat)
λP
tr
Value
1.3 V typ., 1.6 V max.
10 μA max.
950 nm typ.
0.2 mA min.
500 nA max.
---
0.4 V max.
800 nm typ.
10 μs typ.
Falling time
tf 10 μs typ.
Condition
IF = 50 mA
VR = 5 V
IF = 50 mA
IF = 20 mA, VCE = 5 V
VCE = 10 V, 0 lx
---
IF = 20 mA, IL = 0.1 mA
VCE = 5 V
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
VCC = 5 V, RL = 100 Ω,
IF = 20 mA
60 EE-SX1106 Photomicrosensor (Transmissive)

EE-SX1106
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Light Current vs. Forward Current
Voltage Characteristics (Typical) Characteristics (Typical)
Ta = 25°C
VCE = 5 V
Ambient temperature Ta (°C)
Light Current vs. CollectorEmitter
Voltage Characteristics (Typical)
Ta = 25°C
IF = 25 mA
IF = 20 mA
IF = 15 mA
IF = 10 mA
IF = 5 mA
Forward voltage VF (V)
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Forward current IF (mA)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
VCE = 30 V
VCE =20 V
VCE = 10 V
CollectorEmitter voltage VCE (V)
Response Time vs. Light Current
Characteristics (Typical)
VCE = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
Ambient temperature Ta (°C)
Sensing Position Characteristics
(Typical)
IF = 20 mA
VCE = 5 V
Ta = 25°C
RL = 1K Ω
RL = 500 Ω
RL = 100 Ω
Light current It (mA)
Response Time Measurement Circuit
Input
Output
90 %
10 %
Input
Output
Distance d (mm)
Distance d (mm)
EE-SX1106 Photomicrosensor (Transmissive)
61


Features Photomicrosensor (Transmissive) EE-SX110 6 Be sure to read Precautions on page 25. ■ Dimensions Note: All units are in millimeters unless otherwise indicat ed. ■ Features • Ultra-compact wit h a slot width of 3 mm. • PCB mountin g type. • High resolution with a 0.4- mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Two, C0.7 5.4 Fo ur, 0.5 5 min. Two, C0.2 Internal Cir cuit Optical axis Two, R1 Four, 0.2 1 −00.1 dia 1.4 0 −0.1 dia Item Symbol Rated value Gate Emitter Forwa rd current IF 50 mA (see note 1) Pul se forward cur- IFP rent --- Reverse voltage VR 5V Detector Collector– Emitter VCEO voltage 30 V Emitter–C ollector VECO voltage 4.5 V Collector current IC 30 mA Collector dissipa- PC tion 80 mW (see note 1) Ambient te m- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 85 C Soldering temperature Tsol 260°C (see note 2) Terminal No. Name A Anode K Cathode C Collector E Emitter Unless otherwise specified, the tolerances are ±0.2 mm. No.
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