FFSB0865B

FFSB0865B Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175°C Avalanche Rated 33 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V) VRRM EAS 650 V 33 mJ Continuous Rectified Forward Current Non−Repetitive Peak Forward Surge Current @ TC < 147 @ TC < 135 TC = 25°C tP = 10 ms IF IFM 8.0 A 10.1 577 A TC = 150°C tP = 10 ms 533 Non−Repetitive Forward Surge Current (Half−Sine Pulse) TC = 25°C tP = 8.3 ms IFSM 56 A Power Dissipation TC = 25°C TC = 150°C Operating Junction and Storage Temperature Range Ptot TJ, Tstg 73 12...