FFSH20120A Diode Datasheet

FFSH20120A Datasheet PDF, Equivalent


Part Number

FFSH20120A

Description

Silicon Carbide Schottky Diode

Manufacture

ON Semiconductor

Total Page 6 Pages
PDF Download
Download FFSH20120A Datasheet PDF


FFSH20120A
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FFSH20120A
Silicon Carbide Schottky Diode
1200 V, 20 A
Features
• Max Junction Temperature 175 oC
• Avalanche Rated 200 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size and cost.
1
2
TO-247-2L
1. Cathode
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VRRM
EAS
IF
IF, Max
IF,SM
IF,RM
Ptot
TJ, TSTG
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
(Note 1)
Continuous Rectified Forward Current @ TC < 153 oC
Continuous Rectified Forward Current @ TC < 135 °C
Non-Repetitive Peak Forward Surge Current
TC = 25 oC, 10 μs
TC = 150 oC, 10 μs
Non-RepetitiveForwardSurgeCurrent
Half-Sine Pulse, tp = 8.3 ms
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, tp = 8.3 ms
TC = 25 oC
TC = 150 oC
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction to Case, Max.
2. Anode
Ratings
1200
200
20
30
1190
990
135
74
273
46
-55 to +175
Ratings
0.55
Unit
V
mJ
A
A
A
A
A
W
W
oC
Unit
oC/W
Semiconductor Components Industries, LLC, 2017
February, 2017, Rev.1.0
1
Publication Order Number:
FFSH20120A

FFSH20120A
Package Marking and Ordering Information
Part Number
FFSH20120A
Top Mark
FFSH20120A
Package Packing Method
TO-247-2L
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
Test Conditions
IF = 20 A, TC = 25 oC
IF = 20 A, TC = 125 oC
IF = 20 A, TC = 175 oC
VR = 1200 V, TC = 25 oC
VR = 1200 V, TC = 125 oC
VR = 1200 V, TC = 175 oC
V = 800 V
VR = 1 V, f = 100 kHz
VR = 400 V, f = 100 kHz
VR = 800 V, f = 100 kHz
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1.45
1.7
2
-
-
-
120
1220
111
88
Max.
1.75
2
2.4
200
300
400
-
-
-
-
Unit
V
μA
nC
pF
Notes:
1: EAS of 200 mJ is based on starting TJ = 25 °C, L = 0.5 mH, IAS = 29 A, V = 150 V.
Typical Characteristics TJ = 25 °C unless otherwise noted.
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
40
TJ = -55 oC
30 TJ = 25 oC
TJ = 75 oC
101
100
TJ = 175 oC
20
TJ = 125 oC
10 TJ = 175 oC
10-1
TJ = 125 oC
10-2 TJ = 75 oC
0
01234
VF, FORWARD CURRENT (V)
10-3
200
TJ = 25 oC
TJ = -55 oC
400 600 800 1000
VR, REVERESE VOLTAGE (V)
1200
Figure 3. Reverse Characteristics
1.0
TJ = -55 oC
0.8 TJ = 25 oC
TJ = 75 oC
0.6
0.4
0.2
0.0
1000
TJ = 125 oC
TJ = 175 oC
1100
1200
1300
1400
VR, REVERSE VOLTAGE (V)
1500
Figure 4. Current Derating
250
200 D = 0.1
150 D = 0.2
D = 0.3
100 D = 0.5
50 D = 0.7 D = 1
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
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2


Features FFSH20120A — Silicon Carbide Schottky Diode www.onsemi.com FFSH20120A Silic on Carbide Schottky Diode 1200 V, 20 A Features • Max Junction Temperature 1 75 oC • Avalanche Rated 200 mJ • Hi gh Surge Current Capacity • Positive Temperature Coefficient • Ease of Par alleling • No Reverse Recovery / No F orward Recovery Applications • Genera l Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits Descript ion Silicon Carbide (SiC) Schottky Diod es use a completely new technology that provides superior switching performanc e and higher reliability compared to Si licon. No reverse recovery current, tem perature independent switching characte ristics, and excellent thermal performa nce sets Silicon Carbide as the next ge neration of power semiconductor. System benefits include highest efficiency, f aster operating frequency, increased po wer density, reduced EMI, and reduced s ystem size and cost. 1 2 TO-247-2L 1. Cathode Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Param.
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