FFSD1065A

Silicon Carbide Schottky Diode 650 V, 10 A FFSD1065A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features Max Junction Temperature 175°C Avalanche Rated 64 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits www.onsemi.com 1, 2, 4. Cathode 3. Anode Schottky Diode 4 12 3 DPAK3 (TO−252, 3 LD) CASE 369AS MARKING DIAGRAM $Y&Z&3&K FFS D1065A $Y &Z &3 &K FFSD1065A = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 January, 2020 − Rev. 3 1 Publication Order Number: FFSD1065A/D FFSD1065A MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Rating Parameter FFSD1065A Unit VRRM Peak Repetitive R...