FFSM1265A Diode Datasheet

FFSM1265A Datasheet PDF, Equivalent


Part Number

FFSM1265A

Description

Silicon Carbide Schottky Diode

Manufacture

ON Semiconductor

Total Page 7 Pages
PDF Download
Download FFSM1265A Datasheet PDF


FFSM1265A
FFSM1265A
Silicon Carbide Schottky
Diode
650 V, 12 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 79 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
www.onsemi.com
5 Cathode 3, 4 Anode
1, 2 Floating
Schottky Diode
Pin 1
5
43
21
PQFN4 8X8, 2P
(Power88)
CASE 483AP
MARKING DIAGRAM
$Y&Z&3&K
FFSM
1265A
$Y
&Z
&3
&K
FFSM1265A
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
August, 2019 Rev. 2
1
Publication Order Number:
FFSM1265A/D

FFSM1265A
FFSM1265A
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
650 V
EAS Single Pulse Avalanche Energy (Note 1)
79 mJ
IF Continuous Rectified Forward Current @ TC < 137°C
12 A
Continuous Rectified Forward Current @ TC < 135°C
12.5 A
IF, Max
Non-Repetitive Peak Forward Surge Current
TC = 25°C, 10 ms
700 A
TC = 150°C, 10 ms
515 A
IF,SM
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
63
A
IF,RM
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
31
A
Ptot Power Dissipation
TC = 25°C
80 W
TC = 150°C
14 W
TJ, TSTG
Operating and Storage Temperature Range
55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 79 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 12.6 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max
Value
1.87
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
VF Forward Voltage
IF = 12 A, TC = 25°C
1.5 1.75
V
IF = 12 A, TC = 125°C
1.6 2.0
IF = 12 A, TC = 175°C
1.72 2.4
IR Reverse Current
VR = 650 V, TC = 25°C − − 200 mA
VR = 650 V, TC = 125°C
400
VR = 650 V, TC = 175°C
600
QC
Total Capacitive Charge
V = 400 V
40 nC
C Total Capacitance
VR = 1 V, f = 100 kHz
665
pF
VR = 200 V, f = 100 kHz
74
VR = 400 V, f = 100 kHz
54
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size
Tape Width Shipping (Qty / Packing)
FFSM1265A
FFSM1265A
PQFN4 8X8, 2P
(Power88)
13
13.3 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Features FFSM1265A Silicon Carbide Schottky Diode 650 V, 12 A Description Silicon Carbid e (SiC) Schottky Diodes use a completel y new technology that provides superior switching performance and higher relia bility compared to Silicon. No reverse recovery current, temperature independe nt switching characteristics, and excel lent thermal performance sets Silicon C arbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating fr equency, increased power density, reduc ed EMI, and reduced system size and cos t. Features • Max Junction Temperatur e 175°C • Avalanche Rated 79 mJ • High Surge Current Capacity • Positiv e Temperature Coefficient • Ease of P aralleling • No Reverse Recovery/No F orward Recovery Applications • Genera l Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits www.onse mi.com 5 Cathode 3, 4 Anode 1, 2 Float ing Schottky Diode Pin 1 5 43 21 PQFN 4 8X8, 2P (Power88) CASE 483AP MARKING DIAGRAM $Y&Z&3&K FFSM 1265A $Y &Z &3 &K .
Keywords FFSM1265A, datasheet, pdf, ON Semiconductor, Silicon, Carbide, Schottky, Diode, FSM1265A, SM1265A, M1265A, FFSM1265, FFSM126, FFSM12, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)