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FFSM1265A Dataheets PDF



Part Number FFSM1265A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Carbide Schottky Diode
Datasheet FFSM1265A DatasheetFFSM1265A Datasheet (PDF)

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 12 A, 650 V, D1, Power88 FFSM1265A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating fr.

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 12 A, 650 V, D1, Power88 FFSM1265A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features • Max Junction Temperature 175°C • Avalanche Rated 79 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits DATA SHEET www.onsemi.com 5 Cathode 3, 4 Anode 1, 2 Floating Schottky Diode Pin 1 b 5 4 3 21 PQFN4 8X8, 2P (Power88) CASE 483AP MARKING DIAGRAM AXYYKK FFSM 1265A A XYY KK FFSM1265A = Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 February, 2023 − Rev. 4 Publication Order Number: FFSM1265A/D FFSM1265A ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 650 V EAS Single Pulse Avalanche Energy (Note 1) 79 mJ IF Continuous Rectified Forward Current @ TC < 137°C 12 A Continuous Rectified Forward Current @ TC < 135°C 12.5 A IF, Max Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 700 A TC = 150°C, 10 ms 515 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 63 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 31 A Ptot Power Dissipation TC = 25°C 80 W TC = 150°C 14 W TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 79 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 12.6 A, V = 50 V. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max Value 1.87 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit VF Forward Voltage IF = 12 A, TC = 25°C − 1.5 1.75 V IF = 12 A, TC = 125°C − 1.6 2.0 IF = 12 A, TC = 175°C − 1.72 2.4 IR Reverse Current VR = 650 V, TC = 25°C − − 200 mA VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 QC Total Capacitive Charge V = 400 V − 40 − nC C Total Capacitance VR = 1 V, f = 100 kHz − 665 − pF VR = 200 V, f = 100 kHz − 74 − VR = 400 V, f = 100 kHz − 54 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping (Qty / Packing) FFSM1265A FFSM1265A PQFN4 8X8, 2P (Power88) 13″ 13.3 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 IF, FORWARD CURRENT (A) I , PEAK FORWARD CURRENT (A) F FFSM1265A TYPICAL CHARACTERISTICS (TJ = 25°C UNLESS OTHERWISE NOTED) 12 10 8 6 4 TJ = 175 oC 2 TJ = 125 oC TJ = 75 oC TJ = 25 oC TJ = −55oC 0 0.0 0.5 1.0 1.5 2.0 V , FORWARD VOLTAGE (V) F Figure 1. Forward Characteristics 120 D = 0.1 100 80 D = 0.2 60 D = 0.3 D = 0.5 40 20 D = 0.7 D = 1 0 25 50 75 100 125 150 175 T , CASE TEMPERATURE ( oC) C Figure 3. Current Derating 60 50 40 30 20 10 0 0 100 200 300 400 500 600 650 V , REVERSE VOLTAGE (V) R Figure 5. Capacitive Charge vs. Reverse Voltage CAPACITANCE (pF) PTOT, POWER DISSIPATION (W) IR, REVERSE CURRENT (m A) 10−4 10−5 10−6 TJ = 175 oC 10−7 TJ = 125 oC TJ = 75 oC 10−8 TJ = −55o J = 25 oC 10−9 200 300 400 500 600 650 V , REVERSE VOLTAGE (V) R Figure 2. Reverse Characteristics 100 80 60 40 20 0 25 50 75 100 125 150 175 T , CASE TEMPERATURE ( oC) C Figure 4. Power Derating 1000 100 10 0.1 1 10 100 650 V , REVERSE VOLTAGE (V) R Figure 6. Capacitance vs. Reverse Voltage Q , CAPACITIVE CHARGE (nC) C www.onsemi.com 3 E , CAPACITIVE ENERGY (mJ) C r(.


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