Document
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 12 A, 650 V, D1, Power88
FFSM1265A
Description Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
• Max Junction Temperature 175°C • Avalanche Rated 79 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits
DATA SHEET www.onsemi.com
5 Cathode 3, 4 Anode 1, 2 Floating
Schottky Diode
Pin 1
b
5
4 3 21
PQFN4 8X8, 2P (Power88)
CASE 483AP
MARKING DIAGRAM
AXYYKK FFSM 1265A
A XYY KK FFSM1265A
= Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
February, 2023 − Rev. 4
Publication Order Number: FFSM1265A/D
FFSM1265A
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
650
V
EAS
Single Pulse Avalanche Energy (Note 1)
79
mJ
IF
Continuous Rectified Forward Current @ TC < 137°C
12
A
Continuous Rectified Forward Current @ TC < 135°C
12.5
A
IF, Max
Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms
700
A
TC = 150°C, 10 ms
515
A
IF,SM
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
63
A
IF,RM
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
31
A
Ptot
Power Dissipation
TC = 25°C
80
W
TC = 150°C
14
W
TJ, TSTG Operating and Storage Temperature Range
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 79 mJ is based on starting TJ = 25°C, L = 1 mH, IAS = 12.6 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max
Value 1.87
Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
VF
Forward Voltage
IF = 12 A, TC = 25°C
−
1.5
1.75
V
IF = 12 A, TC = 125°C
−
1.6
2.0
IF = 12 A, TC = 175°C
−
1.72
2.4
IR
Reverse Current
VR = 650 V, TC = 25°C
−
−
200
mA
VR = 650 V, TC = 125°C
−
−
400
VR = 650 V, TC = 175°C
−
−
600
QC
Total Capacitive Charge
V = 400 V
−
40
−
nC
C
Total Capacitance
VR = 1 V, f = 100 kHz
−
665
−
pF
VR = 200 V, f = 100 kHz
−
74
−
VR = 400 V, f = 100 kHz
−
54
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size
Tape Width Shipping (Qty / Packing)
FFSM1265A
FFSM1265A
PQFN4 8X8, 2P (Power88)
13″
13.3 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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IF, FORWARD CURRENT (A)
I , PEAK FORWARD CURRENT (A)
F
FFSM1265A
TYPICAL CHARACTERISTICS
(TJ = 25°C UNLESS OTHERWISE NOTED)
12
10
8
6
4
TJ = 175 oC
2
TJ = 125 oC
TJ = 75 oC
TJ = 25 oC TJ = −55oC
0
0.0
0.5
1.0
1.5
2.0
V , FORWARD VOLTAGE (V) F
Figure 1. Forward Characteristics
120
D = 0.1
100
80
D = 0.2
60 D = 0.3
D = 0.5
40
20
D = 0.7 D = 1
0 25 50 75 100 125 150 175
T , CASE TEMPERATURE ( oC) C
Figure 3. Current Derating
60
50
40
30
20
10
0 0 100 200 300 400 500 600 650 V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse Voltage
CAPACITANCE (pF)
PTOT, POWER DISSIPATION (W)
IR, REVERSE CURRENT (m A)
10−4
10−5
10−6
TJ = 175 oC
10−7
TJ = 125 oC
TJ = 75 oC
10−8
TJ = −55o
J = 25 oC
10−9 200
300
400
500
600 650
V , REVERSE VOLTAGE (V) R
Figure 2. Reverse Characteristics
100
80
60
40
20
0 25 50 75 100 125 150 175
T , CASE TEMPERATURE ( oC) C
Figure 4. Power Derating
1000
100
10 0.1
1
10
100
650
V , REVERSE VOLTAGE (V) R
Figure 6. Capacitance vs. Reverse Voltage
Q , CAPACITIVE CHARGE (nC) C
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E , CAPACITIVE ENERGY (mJ) C
r(.