FFSD08120A Diode Datasheet

FFSD08120A Datasheet PDF, Equivalent


Part Number

FFSD08120A

Description

Silicon Carbide Schottky Diode

Manufacture

ON Semiconductor

Total Page 5 Pages
PDF Download
Download FFSD08120A Datasheet PDF


FFSD08120A
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FFSD08120A
Silicon Carbide Schottky Diode
1200 V, 8 A
Features
• Max Junction Temperature 175 °C
• Avalanche Rated 80 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size & cost.
3
1
2
D-PAK
(TO-252)
1,3 Cathode 2. Anode
Absolute Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
Parameter
VRRM
EAS
IF
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
Continuous Rectified Forward Current @ TC < 168 °C
Continuous Rectified Forward Current @ TC < 135 °C
(Note 1)
IF, Max
IF,SM
IF,RM
Ptot
TJ, TSTG
Non-Repetitive Peak Forward Surge Current
TC = 25 °C, 10 μs
TC = 150 °C, 10 μs
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Power Dissipation
TC = 25 °C
TC = 150 °C
Operating and Storage Temperature Range
Thermal Characteristic
Symbol
RθJC
Parameter
Thermal Resistance, Junction to Case, Max
FFSD08120A
1200
80
8
22.5
530
480
77
45
263
44
-55 to +175
Ratings
0.57
Unit
V
mJ
A
A
A
A
A
A
W
W
°C
Unit
°C/W
Semiconductor Components Industries, LLC, 2017
Sep, 2017, Rev. 1.0
1
Publication Order Number:
FFSD08120A/D

FFSD08120A
Package Marking and Ordering Information
Part Number
FFSD08120A
Top Mark
FFSD08120A
Package
D-PAK
Reel Size
13”
Electrical Characteristics TC = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
IF = 8 A, TC = 25 oC
IF = 8 A, TC = 125 oC
IF = 8 A, TC = 175 oC
VR = 1200 V, TC = 25 oC
VR = 1200 V, TC = 125 oC
VR = 1200 V, TC = 175 oC
V = 800 V
VR = 1 V, f = 100 kHz
VR = 400 V, f = 100 kHz
VR = 800 V, f = 100 kHz
Notes:
1: EAS of 80 mJ is based on starting TJ = 25 °C, L = 0.5 mH, IAS = 18 A, V = 50 V.
Tape Width
12 mm
Quantity
2500 units
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1.45
1.7
2.0
-
-
-
55
538
50
40
Max.
1.75
2.0
2.4
200
300
400
-
-
-
-
Unit
V
μA
nC
pF
Typical Characteristics TJ = 25 °C unless otherwise noted.
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
8
TJ = -55 oC
TJ = 25 oC
6 TJ = 75 oC
TJ = 125 oC
TJ = 175 oC
4
2
0
012
VF, FORWARD VOLTAGE (V)
Figure 3. Reverse Characteristics
3
10
TJ = 175 oC
1
TJ = 125 oC
10-1
10-2
10-3
200
TJ = 75 oC
TJ = 25 oC
TJ = -55 oC
400 600 800 1000
VR, REVERESE VOLTAGE (V)
1200
Figure 4. Current Derating
1.0
TJ = 175 oC
0.8 TJ = 125 oC
TJ = 75 oC
0.6 TJ = 25 oC
TJ = -55 oC
0.4
0.2
0.0
1000
1100 1200 1300 1400
VR, REVERSE VOLTAGE (V)
1500
160
D = 0.1
120
D = 0.2
80 D = 0.3
D = 0.5
40
D = 0.7 D = 1
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
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2


Features FFSD08120A — Silicon Carbide Schottky Diode www.onsemi.com FFSD08120A Silic on Carbide Schottky Diode 1200 V, 8 A F eatures • Max Junction Temperature 17 5 °C • Avalanche Rated 80 mJ • Hig h Surge Current Capacity • Positive T emperature Coefficient • Ease of Para lleling • No Reverse Recovery / No Fo rward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits Descripti on Silicon Carbide (SiC) Schottky Diode s use a completely new technology that provides superior switching performance and higher reliability compared to Sil icon. No reverse recovery current, temp erature independent switching character istics, and excellent thermal performan ce sets Silicon Carbide as the next gen eration of power semiconductor. System benefits include highest efficiency, fa ster operating frequency, increased pow er density, reduced EMI, and reduced sy stem size & cost. 3 1 2 D-PAK (TO-25 2) 1,3 Cathode 2. Anode Absolute Maximum Ratings TC = 25 °C unless otherwise noted.
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