FFSD10120A Diode Datasheet

FFSD10120A Datasheet PDF, Equivalent


Part Number

FFSD10120A

Description

Silicon Carbide Schottky Diode

Manufacture

ON Semiconductor

Total Page 6 Pages
PDF Download
Download FFSD10120A Datasheet PDF


FFSD10120A
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FFSD10120A
Silicon Carbide Schottky Diode
1200 V, 10 A
Features
• Max Junction Temperature 175 °C
• Avalanche Rated 100 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size & cost.
3
1
2
D-PAK
(TO-252)
1,3 Cathode 2. Anode
Absolute Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
Parameter
VRRM
EAS
IF
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
Continuous Rectified Forward Current @ TC < 164 °C
Continuous Rectified Forward Current @ TC < 135 °C
(Note 1)
IF, Max
IF,SM
IF,RM
Ptot
TJ, TSTG
Non-Repetitive Peak Forward Surge Cur-
rent
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Operating and Storage Temperature Range
TC = 25 °C, 10 μs
TC = 150 °C, 10 μs
Half-Sine Pulse, tp = 8.3 ms
Half-Sine Pulse, tp = 8.3 ms
TC = 25 °C
TC = 150 °C
Thermal Characteristic
Symbol
RθJC
Parameter
Thermal Resistance, Junction to Case, Max
FFSD10120A
1200
100
10
22
850
800
90
35
283
47
-55 to +175
FFSD10120A
0.53
Unit
V
mJ
A
A
A
A
A
W
W
°C
Unit
°C/W
Semiconductor Components Industries, LLC, 2017
February, 2017, Rev.1.0
1
Publication Order Number:
FFSD10120A

FFSD10120A
Package Marking and Ordering Information
Part Number
FFSD10120A
Top Mark
FFSD10120A
Package
D-PAK
Packing Method
N/A
Electrical Characteristics TC = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
IF = 10 A, TC = 25 oC
IF = 10 A, TC = 125 oC
IF = 10 A, TC = 175 oC
VR = 1200 V, TC = 25 oC
VR = 1200 V, TC = 125 oC
VR = 1200 V, TC = 175 oC
V = 800 V
VR = 1 V, f = 100 kHz
VR = 400 V, f = 100 kHz
VR = 800 V, f = 100 kHz
Notes:
1: EAS of 100 mJ is based on starting TJ = 25 °C, L = 0.5 mH, IAS = 20 A, V = 150 V.
Reel Size Tape Width
13” N/A
Quantity
2500 units
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1.45
1.7
2
-
-
-
62
612
58
47
Max.
1.75
2
2.4
200
300
400
-
-
-
-
Unit
V
μA
nC
pF
Typical Characteristics TJ = 25 °C unless otherwise noted.
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
20
TJ = -55 oC
15 TJ = 25 oC
TJ = 75 oC
10
5
TJ = 125 oC
TJ = 175 oC
0
01234
VF, FORWARD VOLTAGE (V)
Figure 3. Reverse Characteristics
101
100
TJ = 175 oC
10-1 TJ = 125 oC
TJ = 75 oC
10-2 TJ = 25 oC
10-3
200
TJ = -55 oC
400 600 800 1000 1200
VR, REVERESE VOLTAGE (V)
Figure 4. Current Derating
1.0
TJ = -55 oC
0.8 TJ = 25 oC
TJ = 75 oC
0.6
0.4
0.2
0.0
1000
TJ = 125 oC
TJ = 175 oC
1100 1200 1300 1400
VR, REVERSE VOLTAGE (V)
1500
250
200 D = 0.1
150 D = 0.2
D = 0.3
100
D = 0.5
50
D = 0.7 D = 1
0
25 50 75
100 125 150
TC, CASE TEMPERATURE (oC)
175
www.onsemi.com
2


Features FFSD10120A — Silicon Carbide Schottky Diode www.onsemi.com FFSD10120A Silic on Carbide Schottky Diode 1200 V, 10 A Features • Max Junction Temperature 1 75 °C • Avalanche Rated 100 mJ • H igh Surge Current Capacity • Positive Temperature Coefficient • Ease of Pa ralleling • No Reverse Recovery / No Forward Recovery Applications • Gener al Purpose • SMPS, Solar Inverter, UP S • Power Switching Circuits Descrip tion Silicon Carbide (SiC) Schottky Dio des use a completely new technology tha t provides superior switching performan ce and higher reliability compared to S ilicon. No reverse recovery current, te mperature independent switching charact eristics, and excellent thermal perform ance sets Silicon Carbide as the next g eneration of power semiconductor. Syste m benefits include highest efficiency, faster operating frequency, increased p ower density, reduced EMI, and reduced system size & cost. 3 1 2 D-PAK (TO- 252) 1,3 Cathode 2. Anode Absolute Maximum Ratings TC = 25 °C unless otherwise not.
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