Document
FFSB20120A-F085
Silicon Carbide Schottky Diode
1200 V, 20 A
Description Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
• Max Junction Temperature 175°C • Avalanche Rated 200 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • AEC−Q101 qualified
Applications
• Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters
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1.,3. Cathode 2. Anode Schottky Diode
3 1
2 D2PAK−3(TO−263, 3−LEAD)
CASE 418AJ MARKING DIAGRAM
$Y&Z&3&K FFSB 20120A
$Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSB20120A = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
September, 2019 − Rev. 0
1
Publication Order Number: FFSB20120A−F085/D
FFSB20120A−F085
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VRRM
Peak Repetitive Reverse Voltage
1200
V
EAS Single Pulse Avalanche Energy IF Continuous Rectified Forward Current @ TC < 157°C
(Note 1)
200 20
mJ A
IF, Max
Continuous Rectified Forward Current @ TC < 135°C Non−Repetitive Peak Forward Surge Current
TC = 25°C, 10 ms
32 1190
A
TC = 150°C, 10 ms
990
IF, SM IF, RM Ptot
Non−Repetitive Forward Surge Current Repetitive Forward Surge Current Power Dissipation
Half−Sine Pulse, tp = 8.3 ms Half−Sine Pulse, tp = 8.3 ms TC = 25°C
135 74 333
A A W
TC = 150°C
55 W
TJ, TSTG Operating and Storage Temperature Range
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max
Ratings 0.45
Unit °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Shipping†
FFSB20120A−F085
FFSB20120A
D2PAK
800 Units/ Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Unit
VF Forward Voltage
IF = 20 A, TC = 25°C
−
1.45 1.75
V
IF = 20 A, TC = 125°C
− 1.7 2
IF = 20 A, TC = 175°C
− 2 2.4
IR Reverse Current
VR = 1200 V, TC = 25°C
− − 200 mA
VR = 1200 V, TC = 125°C
− − 300
VR = 1200 V, TC = 175°C
− − 400
QC Total Capacitive Charge
V = 800 V
− 120 − nC
C Total Capacitance
VR = 1 V, f = 100 kHz
− 1220 − pF
VR = 400 V, f = 100 kHz
− 111 −
VR = 800 V, f = 100 kHz
− 88 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. EAS of 200 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 29 A, V = 50 V.
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IF, FORWARD CURRENT (A)
IP, PEAK FORWARD CURRENT (A)
FFSB20120A−F085
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
20 TJ = −55°C TJ = 25°C
16 TJ = 75°C
12
8
TJ = 125°C TJ = 175°C
4
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Characteristics
IR, REVERSE CURRENT (mA)
101
100
10−1
TJ = 175°C TJ = 125°C
10−2 10−3
200
TJ = 75°C
TJ = 25°C
TJ = −55°C
400 600 800 1000 VR, REVERSE VOLTAGE (V)
Figure 2. Reverse Characteristics
1200
250 D = 0.1
200 D = 0.2
150
100
D = 0.3
D = 0.5
50 D = 0.7
D=1
0 25 50
75 100 125 150
TC, CASE TEMPERATURE (5C)
Figure 3. Current Derating
175
PTOT, POWER DISSIPATION (W)
350 300 250 200 150 100
50 0 25
50 75 100 125 150 TC, CASE TEMPERATURE (5C)
Figure 4. Power Derating
175
150 5000 125 100 1000
75
CAPACITIANCE (pF)
50
25
0 0 200 400 600 800 1000 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage
100
50 0.1
1 10 100 VR, REVERSE VOLTAGE (V)
1000
Figure 6. Capacitive Charge vs. Reverse Voltage
QC, CAPACITIVE CHARGE (nC)
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EC, CAPACITIVE ENERGY (mJ)
FFSB20120A−F085
TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)
50
40
30
20
10
0 0 200 400 600 800 1000 VR, REVERSE VOLTAGE (V) Figure 7. Cap.