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FFSB20120A-F085 Dataheets PDF



Part Number FFSB20120A-F085
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Carbide Schottky Diode
Datasheet FFSB20120A-F085 DatasheetFFSB20120A-F085 Datasheet (PDF)

FFSB20120A-F085 Silicon Carbide Schottky Diode 1200 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power.

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FFSB20120A-F085 Silicon Carbide Schottky Diode 1200 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features • Max Junction Temperature 175°C • Avalanche Rated 200 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • AEC−Q101 qualified Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters www.onsemi.com 1.,3. Cathode 2. Anode Schottky Diode 3 1 2 D2PAK−3(TO−263, 3−LEAD) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FFSB 20120A $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSB20120A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 September, 2019 − Rev. 0 1 Publication Order Number: FFSB20120A−F085/D FFSB20120A−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage 1200 V EAS Single Pulse Avalanche Energy IF Continuous Rectified Forward Current @ TC < 157°C (Note 1) 200 20 mJ A IF, Max Continuous Rectified Forward Current @ TC < 135°C Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 32 1190 A TC = 150°C, 10 ms 990 IF, SM IF, RM Ptot Non−Repetitive Forward Surge Current Repetitive Forward Surge Current Power Dissipation Half−Sine Pulse, tp = 8.3 ms Half−Sine Pulse, tp = 8.3 ms TC = 25°C 135 74 333 A A W TC = 150°C 55 W TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max Ratings 0.45 Unit °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Shipping† FFSB20120A−F085 FFSB20120A D2PAK 800 Units/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ. Max. Unit VF Forward Voltage IF = 20 A, TC = 25°C − 1.45 1.75 V IF = 20 A, TC = 125°C − 1.7 2 IF = 20 A, TC = 175°C − 2 2.4 IR Reverse Current VR = 1200 V, TC = 25°C − − 200 mA VR = 1200 V, TC = 125°C − − 300 VR = 1200 V, TC = 175°C − − 400 QC Total Capacitive Charge V = 800 V − 120 − nC C Total Capacitance VR = 1 V, f = 100 kHz − 1220 − pF VR = 400 V, f = 100 kHz − 111 − VR = 800 V, f = 100 kHz − 88 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. EAS of 200 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 29 A, V = 50 V. www.onsemi.com 2 IF, FORWARD CURRENT (A) IP, PEAK FORWARD CURRENT (A) FFSB20120A−F085 TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) 20 TJ = −55°C TJ = 25°C 16 TJ = 75°C 12 8 TJ = 125°C TJ = 175°C 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, FORWARD VOLTAGE (V) Figure 1. Forward Characteristics IR, REVERSE CURRENT (mA) 101 100 10−1 TJ = 175°C TJ = 125°C 10−2 10−3 200 TJ = 75°C TJ = 25°C TJ = −55°C 400 600 800 1000 VR, REVERSE VOLTAGE (V) Figure 2. Reverse Characteristics 1200 250 D = 0.1 200 D = 0.2 150 100 D = 0.3 D = 0.5 50 D = 0.7 D=1 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (5C) Figure 3. Current Derating 175 PTOT, POWER DISSIPATION (W) 350 300 250 200 150 100 50 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (5C) Figure 4. Power Derating 175 150 5000 125 100 1000 75 CAPACITIANCE (pF) 50 25 0 0 200 400 600 800 1000 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage 100 50 0.1 1 10 100 VR, REVERSE VOLTAGE (V) 1000 Figure 6. Capacitive Charge vs. Reverse Voltage QC, CAPACITIVE CHARGE (nC) www.onsemi.com 3 EC, CAPACITIVE ENERGY (mJ) FFSB20120A−F085 TYPICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) 50 40 30 20 10 0 0 200 400 600 800 1000 VR, REVERSE VOLTAGE (V) Figure 7. Cap.


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