FFSB20120A-F085 Diode Datasheet

FFSB20120A-F085 Datasheet PDF, Equivalent


Part Number

FFSB20120A-F085

Description

Silicon Carbide Schottky Diode

Manufacture

ON Semiconductor

Total Page 6 Pages
PDF Download
Download FFSB20120A-F085 Datasheet PDF


FFSB20120A-F085
FFSB20120A-F085
Silicon Carbide Schottky
Diode
1200 V, 20 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 200 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
AECQ101 qualified
Applications
Automotive HEVEV Onboard Chargers
Automotive HEVEV DCDC Converters
www.onsemi.com
1.,3. Cathode 2. Anode
Schottky Diode
3
1
2
D2PAK3(TO263, 3LEAD)
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
FFSB
20120A
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSB20120A = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2013
September, 2019 Rev. 0
1
Publication Order Number:
FFSB20120AF085/D

FFSB20120A-F085
FFSB20120AF085
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VRRM
Peak Repetitive Reverse Voltage
1200
V
EAS Single Pulse Avalanche Energy
IF Continuous Rectified Forward Current @ TC < 157°C
(Note 1)
200
20
mJ
A
IF, Max
Continuous Rectified Forward Current @ TC < 135°C
NonRepetitive Peak Forward Surge Current
TC = 25°C, 10 ms
32
1190
A
TC = 150°C, 10 ms
990
IF, SM
IF, RM
Ptot
NonRepetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
HalfSine Pulse, tp = 8.3 ms
HalfSine Pulse, tp = 8.3 ms
TC = 25°C
135
74
333
A
A
W
TC = 150°C
55 W
TJ, TSTG Operating and Storage Temperature Range
55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max
Ratings
0.45
Unit
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Shipping
FFSB20120AF085
FFSB20120A
D2PAK
800 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Unit
VF Forward Voltage
IF = 20 A, TC = 25°C
1.45 1.75
V
IF = 20 A, TC = 125°C
1.7 2
IF = 20 A, TC = 175°C
2 2.4
IR Reverse Current
VR = 1200 V, TC = 25°C
− − 200 mA
VR = 1200 V, TC = 125°C
− − 300
VR = 1200 V, TC = 175°C
− − 400
QC Total Capacitive Charge
V = 800 V
120 nC
C Total Capacitance
VR = 1 V, f = 100 kHz
1220 pF
VR = 400 V, f = 100 kHz
111
VR = 800 V, f = 100 kHz
88
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. EAS of 200 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 29 A, V = 50 V.
www.onsemi.com
2


Features FFSB20120A-F085 Silicon Carbide Schottky Diode 1200 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a co mpletely new technology that provides s uperior switching performance and highe r reliability compared to Silicon. No r everse recovery current, temperature in dependent switching characteristics, an d excellent thermal performance sets Si licon Carbide as the next generation of power semiconductor. System benefits i nclude highest efficiency, faster opera ting frequency, increased power density , reduced EMI, and reduced system size and cost. Features • Max Junction Tem perature 175°C • Avalanche Rated 200 mJ • High Surge Current Capacity • Positive Temperature Coefficient • E ase of Paralleling • No Reverse Recov ery/No Forward Recovery • AEC−Q101 qualified Applications • Automotive H EV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters www.onsem i.com 1.,3. Cathode 2. Anode Schottky D iode 3 1 2 D2PAK−3(TO−263, 3−LEAD) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FFSB 20120A $Y = O.
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