FFSP05120A Diode Datasheet

FFSP05120A Datasheet PDF, Equivalent


Part Number

FFSP05120A

Description

Silicon Carbide Schottky Diode

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download FFSP05120A Datasheet


FFSP05120A
www.onsemi.com
FFSP05120A
Silicon Carbide Schottky Diode
1200 V, 5 A
Features
• Max Junction Temperature 175 °C
• Avalanche Rated 55 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size & cost.
1
2
TO-220-2L
1. Cathode 2. Anode
1. Cathode
Absolute Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol
Parameter
VRRM
EAS
IF
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
Continuous Rectified Forward Current @ TC < 160 °C
Continuous Rectified Forward Current @ TC < 135°C
(Note 1)
IF, Max
IF,SM
IF,RM
Ptot
TJ, TSTG
Non-Repetitive Peak Forward Surge Cur- TC = 25 °C, 10 μs
rent TC = 150 °C, 10 μs
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Power Dissipation
TC = 25 °C
TC = 150 °C
Operating and Storage Temperature Range
Thermal Characteristic
Symbol
RθJC
Parameter
Thermal Resistance, Junction to Case, Max
2. Anode
FFSP05120A
1200
55
5
9.2
380
330
42
21
94
16
-55 to +175
FFSP05120A
1.6
Unit
V
mJ
A
A
A
A
A
A
W
W
°C
Unit
°C/W
Semiconductor Components Industries, LLC, 2017
June, 2017, Rev.1.0
1
Publication Order Number:
FFSP05120A/D

FFSP05120A
Package Marking and Ordering Information
Part Number
FFSP05120A
Top Mark
FFSP05120A
Package
TO-220-2L
Packing Method
Tube
Electrical Characteristics TC = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
IF = 5 A, TC = 25 oC
IF = 5 A, TC = 125 oC
IF = 5 A, TC = 175 oC
VR = 1200 V, TC = 25 oC
VR = 1200 V, TC = 125 oC
VR = 1200 V, TC = 175 oC
V = 800 V
VR = 1 V, f = 100 kHz
VR = 400 V, f = 100 kHz
VR = 800 V, f = 100 kHz
Notes:
1: EAS of 55 mJ is based on starting TJ = 25 °C, L = 0.5 mH, IAS = 15 A, V = 50 V.
Reel Size Tape Width
N/A N/A
Quantity
50 units
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1.45
1.7
2
-
-
-
37
337
33
26
Max.
1.75
2
2.4
200
300
400
-
-
-
-
Unit
V
μA
nC
pF
Typical Characteristics TJ = 25 °C unless otherwise noted.
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
10 101
8
6 TJ = 75 oC
TJ = 125 oC
4 TJ = 175 oC
2
TJ = 25 oC
0 TJ = -55 oC
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF, FORWARD VOLTAGE (V)
Figure 3. Current Derating
100
10-1
10-2
10-3
200
TJ = 125 oC
TJ = 175 oC
TJ = 75 oC
TJ = 25 oC
TJ = -55 oC
400 600 800 1000 1200
VR, REVERSE VOLTAGE (V)
Figure 4. Power Derating
100
D = 0.1
80
60
D = 0.2
40 D = 0.3
D = 0.5
20
D = 0.7 D = 1
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
100
80
60
40
20
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
www.onsemi.com
2


Features FFSP05120A — Silicon Carbide Schottky Diode www.onsemi.com FFSP05120A Silic on Carbide Schottky Diode 1200 V, 5 A F eatures • Max Junction Temperature 17 5 °C • Avalanche Rated 55 mJ • Hig h Surge Current Capacity • Positive T emperature Coefficient • Ease of Para lleling • No Reverse Recovery / No Fo rward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits Descripti on Silicon Carbide (SiC) Schottky Diode s use a completely new technology that provides superior switching performance and higher reliability compared to Sil icon. No reverse recovery current, temp erature independent switching character istics, and excellent thermal performan ce sets Silicon Carbide as the next gen eration of power semiconductor. System benefits include highest efficiency, fa ster operating frequency, increased pow er density, reduced EMI, and reduced sy stem size & cost. 1 2 TO-220-2L 1. C athode 2. Anode 1. Cathode Absolute Maximum Ratings TC = 25 °C unless otherwise no.
Keywords FFSP05120A, datasheet, pdf, ON Semiconductor, Silicon, Carbide, Schottky, Diode, FSP05120A, SP05120A, P05120A, FFSP05120, FFSP0512, FFSP051, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)