NCV51705 Driver Datasheet

NCV51705 Datasheet PDF, Equivalent


Part Number

NCV51705

Description

Low-Side SiC MOSFET Driver

Manufacture

ON Semiconductor

Total Page 19 Pages
Datasheet
Download NCV51705 Datasheet


NCV51705
NCV51705
Single 6 A High-Speed,
Low-Side SiC MOSFET
Driver
The NCV51705 driver is designed to primarily drive SiC MOSFET
transistors. To achieve the lowest possible conduction losses, the
driver is capable to deliver the maximum allowable gate voltage to the
SiC MOSFET device. By providing high peak current during turnon
and turnoff, switching losses are also minimized. For improved
reliability, dV/dt immunity and even faster turnoff, the NCV51705
can utilize its onboard charge pump to generate a user selectable
negative voltage rail.
For full compatibility and to minimize the complexity of the bias
solution in isolated gate drive applications the NCV51705 also
provides an externally accessible 5 V rail to power the secondary side
of digital or high speed opto isolators.
The NCV51705 offers important protection functions such as
undervoltage lockout monitoring for the bias power.
Features
Automotive Qualified to AECQ100 with Grade 1 Temperature
Range
High Peak Output Current with Split Output Stages to Allow
Independent TurnON/TurnOFF Adjustment;
Source Capability: 6 A
Sink Capability: 6 A
Extended Positive Voltage Rating for Efficient SiC MOSFET
Operation during the Conduction Period
Adjustable, Onboard Regulated Charge Pump
Negative Voltage Drive for Fast Turnoff
Builtin Negative Charge Pump
Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply
Adjustable UnderVoltage Lockout
Desaturation Function
Small & Low Parasitic Inductance QFN24 Package with Wettable
Flank
Typical Applications
Driving SiC MOSFET for Automotive Applications
Automotive Inverters, Converter, and Motor Drivers
PFC, AC to DC and DC to DC Converters
www.onsemi.com
MARKING
DIAGRAM
1 24
QFN24
WETTABLE FLANK
CASE 484AE
XXXXX
XXXXX
ALYWG
G
XXXXXX = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
IN+ 1
IN2
XEN 3
SGND 4
VEESET 5
VCH 6
NCV51705
(Top View )
18 OUTSRC
17 OUTSRC
16 PGND
15 PGND
14 OUTSNK
13 OUTSNK
ORDERING INFORMATION
Device
Package Shipping
NCV51705MNTWG QFN24 3000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
April, 2019 Rev. 1
1
Publication Order Number:
NCV51705/D

NCV51705
NCV51705
20V
Controller
IN+ 1
IN2
XEN 3
SGND 4
VEESET 5
VCH 6
VEESET = 5 V à VEE = 5 V
VEESET = OPEN à VEE = 3.4 V
VEESET = SVDD à VEE = 8 V
VEESET = SGND à VEE = OFF
NCV51705
(Top View )
18 OUTSRC
17 OUTSRC
16 PGND
15 PGND
14 OUTSNK
13 OUTSNK
CFLY
CVEE
(a) Low Side Switching Configuration
CONTROLLER BIAS(3.3 V or 5 V)
ISOLATOR BIAS
20 V BIAS (isolated)
PWM_HS
Digital Controller
FAULT_HS
FAULT_LS
XEN_HS
ENABLE
PWM_LS
NCV51705
Digital
Isolators
ISOLATOR BIAS
20 V BIAS (isolated)
XEN_LS
NCV51705
Isolation
Boundary
(b) Half Bridge Switching Configuration
Figure 1. Typical Application Schematics
www.onsemi.com
2


Features NCV51705 Single 6 A High-Speed, Low-Sid e SiC MOSFET Driver The NCV51705 driver is designed to primarily drive SiC MOS FET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allow able gate voltage to the SiC MOSFET dev ice. By providing high peak current dur ing turn−on and turn−off, switching losses are also minimized. For improve d reliability, dV/dt immunity and even faster turn−off, the NCV51705 can uti lize its on−board charge pump to gene rate a user selectable negative voltage rail. For full compatibility and to mi nimize the complexity of the bias solut ion in isolated gate drive applications the NCV51705 also provides an external ly accessible 5 V rail to power the sec ondary side of digital or high speed op to isolators. The NCV51705 offers impor tant protection functions such as under −voltage lockout monitoring for the b ias power. Features • Automotive Qual ified to AEC−Q100 with Grade 1 Temperature Range • High Peak Output Current.
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