NCV51705

Single 6 A High-Speed, Low-Side SiC MOSFET Driver NCV51705 The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCV51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail. For full compatibility and to minimize the complexity of the bias solution in isolated gate drive applications the NCV51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators. The NCV51705 offers important protection functions such as under−voltage lockout monitoring for the bias power. Features  Automotive Qualified to AEC−Q100 with Grade 1 Temperature Range  High Peak Output Current with Split Output Stages to Allow Independent Turn−ON/Turn−OFF Adjustment;  Source Capability: 6 A  Sink Capability: 6 A  Extended Positive Voltage Rating for Efficient SiC MOSFET Operation during the Conduction Period  Adjustable, On−board Regulated Charge Pump  Negative Voltage Drive for Fast Turn−off  Built−in Negative Charge Pump  Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply  Adjustable Under−Voltage Lockout  Desaturation Function  Small & Low Parasitic Induct...