TK25A60X MOSFET Datasheet

TK25A60X Datasheet PDF, Equivalent


Part Number

TK25A60X

Description

Silicon N-Channel MOSFET

Manufacture

Toshiba

Total Page 10 Pages
PDF Download
Download TK25A60X Datasheet PDF


TK25A60X
MOSFETs Silicon N-Channel MOS (DTMOS-H)
TK25A60X
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.105 (typ.)
by used to Super Junction Structure : DTMOS
(2) High-speed switching properties with lower capacitance.
(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)
3. Packaging and Internal Circuit
TK25A60X
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(Tc = 25)
(t = 1.0 s)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
VISO(RMS)
TOR
600
±30
25
100
45
348
6.2
25
100
150
-55 to 150
2000
0.6
V
A
W
mJ
A
V
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2014-06
1 2014-05-12
Rev.2.0

TK25A60X
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 15.8 mH, RG = 25 , IAR = 6.2 A
TK25A60X
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
2.78 /W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2014-05-12
Rev.2.0


Features MOSFETs Silicon N-Channel MOS (DTMOS- H) TK25A60X 1. Applications • Switchi ng Voltage Regulators 2. Features (1) L ow drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Jun ction Structure : DTMOS (2) High-speed switching properties with lower capacit ance. (3) Enhancement mode: Vth = 2.5 t o 3.5 V (VDS = 10 V, ID = 1.2 mA) 3. Pa ckaging and Internal Circuit TK25A60X 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) C haracteristics Symbol Rating Unit D rain-source voltage Gate-source voltage Drain current (DC) Drain current (puls ed) Power dissipation Single-pulse aval anche energy Avalanche current Reverse drain current (DC) Reverse drain curren t (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mou nting torque (Tc = 25) (t = 1.0 s) (Note 1) (Note 1) (Note 2) (Note 1) (N ote 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR 600 ±30 25 100 45 348 6.2 25 100 150 -55 to.
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