FGA4060ADF IGBT Datasheet

FGA4060ADF Datasheet PDF, Equivalent


Part Number

FGA4060ADF

Description

Field Stop Trench IGBT

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
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FGA4060ADF
FGA4060ADF
600 V, 40 A Field Stop Trench IGBT
July 2015
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
This ADF IGBT series adopted Field Stop Trench 3rd genera-
tion IGBT which offer extreme low Vce(sat) and much faster
switching characteristics for outstanding efficiency. And this kind
of technology is fully optimized to variety PFC (Power Factor
Correction) topology ; Single boost, Multi channel interleaved
etc with over 20KHz switching performance. TO3P package
provide Super Low thermal resistance for much wider SOA for
system stability.
Applications
• PFC topology for Home appliance : Single Boost , Multi chan-
nel Interleaved etc.
C
G
C
E
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF (3)
IFM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =120 A, RG = 120  Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. The purpose of diode is protection for negative voltage.
©2015 Fairchild Semiconductor Corporation
FGA4060ADF Rev. 1.0
1
G
E
FGA4060ADF
600
20
30
80
40
120
120
3
1.5
6
238
119
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com

FGA4060ADF
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FGA4060ADF
0.63
5
40
Package Marking and Ordering Information
Part Number
FGA4060ADF
Top Mark
FGA4060ADF
Package Packing Method Reel Size
TO-3PN
Tube
-
Tape Width
-
Unit
oC/W
oC/W
oC/W
Qty per Tube
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES /
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1 mA
IC = 1 mA, Reference to 25oC
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 mA, VCE = VGE
IC = 40 A, VGE = 15 V
ITCC==4107A5,oVCGE = 15 V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400 V, IC = 40 A,
RInGdu=ct6ive,LVoGaEd,=T1C5=V2, 5oC
VCC = 400 V, IC = 40 A,
RInGdu=ct6ive,LVoGaEd,=T1C5=V1, 75oC
600 - - V
- 0.6 - V/oC
- - 250 A
-
-
±400
nA
4.1 5.6 7.6
- 1.8 2.3
- 2.31 -
V
V
V
- 1525 -
- 60 -
- 20 -
pF
pF
pF
- 16.8 -
- 34.4 -
- 54.4 -
- 10 -
- 1.37 -
- 0.25 -
- 1.62 -
- 16 -
- 35.2 -
- 57.6 -
- 12.8 -
- 1.89 -
- 0.47 -
- 2.36 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
©2015 Fairchild Semiconductor Corporation
FGA4060ADF Rev. 1.0
2
www.fairchildsemi.com


Features FGA4060ADF — 600 V, 40 A Field Stop Tr ench IGBT FGA4060ADF 600 V, 40 A Field Stop Trench IGBT July 2015 Features • Maximum Junction Temperature : TJ = 175oC • Positive Temperaure Co-effic ient for Easy Parallel Operating • Hi gh Current Capability • Low Saturatio n Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fa st Switching • Tighten Parameter Dist ribution • RoHS Compliant General De scription This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT w hich offer extreme low Vce(sat) and muc h faster switching characteristics for outstanding efficiency. And this kind o f technology is fully optimized to vari ety PFC (Power Factor Correction) topol ogy ; Single boost, Multi channel inter leaved etc with over 20KHz switching pe rformance. TO3P package provide Super L ow thermal resistance for much wider SO A for system stability. Applications PFC topology for Home appliance : Single Boost , Multi channel Interleaved etc. C .
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