VSC7807 Amplifier Datasheet

VSC7807 Datasheet PDF, Equivalent


Part Number

VSC7807

Description

Photodetector/Transimpedance Amplifier

Manufacture

Vitesse Semiconductor Corporation

Total Page 10 Pages
PDF Download
Download VSC7807 Datasheet PDF


VSC7807
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7807
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Features
Integrated Photodetector/Transimpedance Amplifier
Optimized for High-Speed Optical Communications
Applications
Fibre Channel/Gigabit Ethernet-Compatible
www.DataSheet4U.comHigh Bandwidth: 1300MHz
Low Input Noise Equivalent Power: 2.2µW
Large Optically Active Area
Single 3.3V Power Supply
2.125Gb/s Data Rate
70µm Optically Active Area
Packages: TO-46, TO-56, Bare Die
Applications
Gigabit Ethernet Optical Receivers
Fibre Channel Optical Receivers
ATM Optical Receivers
SONET/SDH
System Interconnect
General Description
The VSC7807 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution
for converting 850nm light from a fiber optic communications channel into a differential output voltage. The
benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high
bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty
cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. The
VSC7807 is available in either die form, flat-windowed packages or ball-lens packages.
By using a Metal-Semiconductor-Metal (MSM) photodetector with a monolithic integrated transimpedance
amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-
detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-
tector and the amplifier, resulting in higher performance. The VSC7807 can easily be used in developing Fibre
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.
VSC7807 Block Diagram
+3.3V
DOUTP
DOUTN
Both DOUTP and DOUTN are back-terminated to 25.
G52363-0, Rev 2.1
04/05/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 1

VSC7807
VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Advance Product Information
VSC7807
Table 1: Electro-Optical Specifications(1)
Symbol
Parameters
Min Typ(2) Max Units
Conditions
VSS
IDD
www.DataSheet4U.com
PSRR
Supply Voltage
Supply Current
Power Supply Rejection Ratio
3.0 3.3 3.6
- - 40
- -10 -
V
mA
Frequencies up to 40MHz.
dB Use external filter to get PSRR
of -35dB(3).
λ Wavelength
Fc Low Frequency Cutoff
BW Optical Modulation Bandwidth
S Sensitivity
700 840 850
- 1.0 2.5
- 1300 -
- 20 -
nm
MHz
MHz
dBm
-3dB, P(4) = -15dBm
-3dB, P = -15dBm
2.488Gb/s, BER10-12(5)
Ro
Single-Ended Output Impedance
- 25 -
VD Differential Output Voltage
0.2 -
-
V
P = -5 dBm,
RL= 100differential
RD Differential Responsivity
1.6 2.0
-
mV/µW
RL = 100
At 50MHz
VDC
VDC
NEPO
VNO
DCD
Output Bias Voltage
Bias Offset Voltage
Input Noise Equivalent Power
Output Noise Voltage
Duty Cycle Distortion
1.0 - - V
- - 200 mV
- 1 2.2 µW rms P = 0mW
- - 1.25 mV rms P = 0mW
- - 4.5 % P = -5dBm
IOUT
PDJ
Output Drive Current
Pattern Dependent Jitter
2.0 2.6 - mA P = -5dBm
-
-
40
ps
P = -5dBm
+/-10% Voltage Window
Optically Active Area
- 70 - µm Diameter
PPJ PP Jitter
- 190 200 ps P = -5dBm
TR Rise Time
TF Fall Time
- - 200 ps 20% to 80% P = -5dBm
- - 200 ps 20% to 80% P = -5dBm
NOTES: (1) Specified over 10°C to 90°C junction. (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in Appli-
cation Note 48. (4) P = Incident Optical Power. (5) See Note 2 In Application Note 48.
Page 2
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52363-0, Rev 2.1
04/05/01


Features VITESSE SEMICONDUCTOR CORPORATION Advan ce Product Information VSC7807 Photode tector/Transimpedance Amplifier Family for Optical Communication Features • Integrated Photodetector/Transimpedanc e Amplifier Optimized for High-Speed Op tical Communications Applications • F ibre Channel/Gigabit Ethernet-Compatibl e www.DataSheet4U.co•mHigh Bandwidth: 1300MHz • Low Input Noise Equivalent Power: 2.2µW • Large Optically Acti ve Area • Single 3.3V Power Supply 2.125Gb/s Data Rate • 70µm Optical ly Active Area • Packages: TO-46, TO- 56, Bare Die Applications • Gigabit Ethernet Optical Receivers • Fibre Ch annel Optical Receivers • ATM Optical Receivers • SONET/SDH • System Int erconnect General Description The VSC7 807 integrated Photodetector/Transimped ance Amplifier provides a highly integr ated solution for converting 850nm ligh t from a fiber optic communications cha nnel into a differential output voltage . The benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized .
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