NVMFS5C404N MOSFET Datasheet

NVMFS5C404N Datasheet PDF, Equivalent


Part Number

NVMFS5C404N

Description

Power MOSFET

Manufacture

ON Semiconductor

Total Page 6 Pages
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NVMFS5C404N
NVMFS5C404N
MOSFET – Power, Single
N-Channel
40 V, 0.7 mW, 378 A
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C404NWF Wettable Flank Option for Enhanced Optical
Inspection
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreesnt1R, 3qJ)C
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
C(Nuortreesnt1R, 2qJ,A3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
±20
378
267
200
100
53
37
3.9
1.9
900
55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 191 A
Single Pulse DraintoSource Avalanche
Energy (IL(pk) = 38 A)
EAS 907 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State
RqJC
0.75 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
40 V
RDS(ON) MAX
0.7 mW @ 10 V
ID MAX
378 A
D (5,6)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
DFN5
(SO8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
XXXXXX = 5C404N
XXXXXX = (NVMFS5C404N) or
XXXXXX = 404NWF
XXXXXX = (NVMFS5C404NWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2019 Rev. 3
1
Publication Order Number:
NVMFS5C404N/D

NVMFS5C404N
NVMFS5C404N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
40
VVDGSS == 400VV,
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
19.7 mV/°C
10
250 mA
100 nA
Gate Threshold Voltage
VGS(TH)
Threshold Temperature Coefficient
VGS(TH)/TJ
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 50 A
VDS =15 V, ID = 50 A
2.0 4.0 V
6.2 mV/°C
0.57 0.7
mW
210 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 5)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 10 V, VDS = 20 V; ID = 50 A
VGS = 10 V, VDS = 20 V; ID = 50 A
8400
4600
120
128
22
35
26
4.3
pF
nC
V
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.5 W
16
113
77 ns
109
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 50 A
TJ = 125°C
0.76 1.2
0.63
V
Reverse Recovery Time
tRR
96
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 50 A
49 ns
47
Reverse Recovery Charge
QRR
189 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2


Features NVMFS5C404N MOSFET – Power, Single N- Channel 40 V, 0.7 mW, 378 A Features Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Con duction Losses • Low QG and Capacitan ce to Minimize Driver Losses • NVMFS5 C404NWF − Wettable Flank Option for E nhanced Optical Inspection • AEC−Q1 01 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Com pliant MAXIMUM RATINGS (TJ = 25°C unl ess otherwise noted) Parameter Symbol Value Unit Drain−to−Source Volta ge Gate−to−Source Voltage Continu ous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain C(Nuortreesn t1R, 2qJ,A3) Power Dissipation RqJA (No tes 1 & 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulse d Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Tempera ture VDSS VGS ID PD ID PD IDM TJ, Tstg 40 ±20 378 267 200 100 53 37 3.9 1.9 900 −55 to + 175 V V A W A W A °C Source Current (Body Diode.
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