SSM3K337R

MOSFETs Silicon N-Channel MOS SSM3K337R 1. Applications Relay Drivers 2. Features (1) AEC-Q101 Qualified (Note1). (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 200 mΩ (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 mΩ (max) (@VGS = 4.5 V, ID = 2.0 A) RDS(ON) = 150 mΩ (max) (@VGS = 10 V, ID = 2.0 A) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment SOT-23F SSM3K337R 1: Gate 2: Source 3: Drain ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2013-12 2021-01-05 Rev.6.0 SSM3K337R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDS(DC) 38 V VGSS ±20 Drain current (DC) (Note 1) ID 2 A Drain current (pulsed) (Note 1), (Note 2) IDP 6 Power dissipation Power dissipation Channel temperature (Note 3) PD (t ≤ 10 s) (Note 3) PD Tch 1 W 2 150 � Single-pulse active clamp capability Storage temperature (Note 4) EAS Tstg 4.5 mJ -55 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon revie...