SSM3K337R MOSFET Datasheet

SSM3K337R Datasheet PDF, Equivalent


Part Number

SSM3K337R

Description

Silicon N-Channel MOSFET

Manufacture

Toshiba

Total Page 9 Pages
PDF Download
Download SSM3K337R Datasheet PDF


SSM3K337R
MOSFETs Silicon N-Channel MOS
SSM3K337R
1. Applications
• Relay Drivers
2. Features
(1) AEC-Q101 Qualified (Note1).
(2) 4.0-V gate drive voltage.
(3) Low drain-source on-resistance
: RDS(ON) = 200 m(max) (@VGS = 4.0 V, ID = 1.0 A)
RDS(ON) = 176 m(max) (@VGS = 4.5 V, ID = 2.0 A)
RDS(ON) = 150 m(max) (@VGS = 10 V, ID = 2.0 A)
(4) HBM: 2-kV class
Note 1: For detail information, please contact to our sales.
3. Packaging and Pin Assignment
SOT-23F
SSM3K337R
1: Gate
2: Source
3: Drain
©2016-2018
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2013-12
2018-04-18
Rev.5.0

SSM3K337R
SSM3K337R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS(DC)
38
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
2A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
6
Power dissipation
(Note 3)
PD
1W
Power dissipation
(t 10 s)
(Note 3)
PD
2
Channel temperature
Tch 150
Single-pulse active clamp capability
(Note 4)
EAS
4.5 mJ
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width (PW) 10 ms, duty 1%
Note 3: Device mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm ,Cu pad: 645 mm2)
Note 4: VDD = 25 V, Tch = 25(Initial state), L = 1 mH
Note:
Note:
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
©2016-2018
Toshiba Electronic Devices & Storage Corporation
2
2018-04-18
Rev.5.0


Features MOSFETs Silicon N-Channel MOS SSM3K337R 1. Applications • Relay Drivers 2. Fe atures (1) AEC-Q101 Qualified (Note1). (2) 4.0-V gate drive voltage. (3) Low d rain-source on-resistance : RDS(ON) = 2 00 mΩ (max) (@VGS = 4.0 V, ID = 1.0 A ) RDS(ON) = 176 mΩ (max) (@VGS = 4.5 V, ID = 2.0 A) RDS(ON) = 150 mΩ (max) (@VGS = 10 V, ID = 2.0 A) (4) HBM: 2-k V class Note 1: For detail information, please contact to our sales. 3. Packag ing and Pin Assignment SOT-23F SSM3K33 7R 1: Gate 2: Source 3: Drain ©2016-2 018 Toshiba Electronic Devices & Storag e Corporation 1 Start of commercial p roduction 2013-12 2018-04-18 Rev.5.0 S SM3K337R 4. Absolute Maximum Ratings ( Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rati ng Unit Drain-source voltage VDS(DC) 38 V Gate-source voltage VGSS ±2 0 Drain current (DC) (Note 1) ID 2A Drain current (pulsed) (Note 1), (No te 2) IDP 6 Power dissipation (Note 3) PD 1W Power dissipation (t ≤ 10 s) (Note 3) PD 2 Channel temper.
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