FDMT800120DC MOSFET Datasheet

FDMT800120DC Datasheet PDF, Equivalent


Part Number

FDMT800120DC

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMT800120DC Datasheet PDF


FDMT800120DC
July 2015
FDMT800120DC
N-Channel Dual CoolTM 88 PowerTrench® MOSFET
120 V, 128 A, 4.2 mΩ
Features
„ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 20 A
„ Max rDS(on) = 6.4 mΩ at VGS = 6 V, ID = 16 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology,
engineered for soft recovery
„ Low profile 8x8mm MLP package
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ MSL1 robust package design
„ OringFET / Load Switching
„ 100% UIL tested
„ Synchronous Rectification
„ RoHS Compliant
„ DC-DC Conversion
Pin 1
Pin 1
G
S
S
G
S
SS
D
D
D
D
D
D
Top
Dual CoolTM 88
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
S
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
D
D
Ratings
120
±20
128
81
20
767
1350
156
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
1.6
0.8
38
81
15
21
9
°C/W
Device Marking
800120DC
Device
FDMT800120DC
©2015 Fairchild Semiconductor Corporation
FDMT800120DC Rev. 1.1
Package
Dual CoolTM 88
1
Reel Size
13”
Tape Width
13.3 mm
Quantity
3000 units
www.fairchildsemi.com

FDMT800120DC
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 96 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 20 A
VGS = 6 V, ID = 16 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VDS = 5 V, ID = 20 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 60 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 60 V, ID = 20 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 6 V
VDD = 60 V,
ID = 20 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.9 A
VGS = 0 V, IS = 20 A
(Note 2)
(Note 2)
IF = 20 A, di/dt = 100 A/μs
Min.
120
2.0
0.1
Typ.
97
3.1
-12
3.45
4.6
6.3
69
5605
778
27
1.4
29
18
40
9.5
76
48
25
15
0.7
0.8
87
164
Max. Units
V
mV/°C
1 μA
100 nA
4.0 V
mV/°C
4.2
6.4 mΩ
7.7
S
7850
1090
40
3.5
pF
pF
pF
Ω
47 ns
33 ns
64 ns
19 ns
107 nC
68 nC
nC
nC
1.1
V
1.2
139 ns
263 nC
©2015 Fairchild Semiconductor Corporation
FDMT800120DC Rev. 1.1
2
www.fairchildsemi.com


Features FDMT800120DC N-Channel Dual CoolTM 88 Po werTrench® MOSFET July 2015 FDMT8001 20DC N-Channel Dual CoolTM 88 PowerTre nch® MOSFET 120 V, 128 A, 4.2 mΩ Fea tures „ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 6.4 m Ω at VGS = 6 V, ID = 16 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next ge neration enhanced body diode technology , engineered for soft recovery „ Low p rofile 8x8mm MLP package General Descr iption This N-Channel MOSFET is produce d using Fairchild Semiconductor’s adv anced PowerTrench® process. Advancemen ts in both silicon and Dual CoolTM pack age technologies have been combined to offer the lowest rDS(on) while maintain ing excellent switching performance by extremely low Junction-to-Ambient therm al resistance. Applications „ MSL1 ro bust package design „ OringFET / Load Switching „ 100% UIL tested „ Sync hronous Rectification „ RoHS Complian t „ DC-DC Conversion Pin 1 Pin 1 G S S G S SS D D D D D D Top Dual Cool.
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