FDMT80080DC

FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET July 2015 FDMT80080DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 80 V, 254 A, 1.35 mΩ Features „ Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A „ Max rDS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ Low profile 8x8mm MLP package General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications „ MSL1 robust package design „ OringFET / Load Switching „ 100% UIL tested „ Synchronous Rectification „ RoHS Compliant „ DC-DC Conversion Pin 1 Pin 1 G S S G S SS D D D D D D Top Dual CoolTM 88 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics S S (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) D D Rat...