FDMT80060DC MOSFET Datasheet

FDMT80060DC Datasheet PDF, Equivalent


Part Number

FDMT80060DC

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
Datasheet
Download FDMT80060DC Datasheet


FDMT80060DC
August 2015
FDMT80060DC
N-Channel Dual CoolTM 88 PowerTrench® MOSFET
60 V, 292 A, 1.1 mΩ
Features
General Description
„ Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A
„ Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology,
engineered for soft recovery
„ Low profile 8x8mm MLP package
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ MSL1 robust package design
„ OringFET / Load Switching
„ 100% UIL tested
„ Synchronous Rectification
„ RoHS Compliant
„ DC-DC Conversion
Pin 1
Pin 1
G
S
S
G
S
SS
D
D
D
D
D
D
Top
Dual CoolTM 88
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
Parameter
TC = 25 °C
TC = 100°C
TA = 25 °C
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
S
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
D
D
Ratings
60
±20
292
184
43
1825
2400
156
3.2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
1.6
0.8
38
81
15
21
9
°C/W
Device Marking
80060DC
Device
FDMT80060DC
©2015 Fairchild Semiconductor Corporation
FDMT80060DC Rev. 1.1
Package
Dual CoolTM 88
1
Reel Size
13”
Tape Width
13.3 mm
Quantity
3000 units
www.fairchildsemi.com

FDMT80060DC
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 43 A
VGS = 8 V, ID = 37 A
VGS = 10 V, ID = 43 A, TJ = 125 °C
VDS = 5 V, ID = 43 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 30 V, ID = 43 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 8 V
VDD = 30 V,
ID = 43 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.6 A
VGS = 0 V, IS = 43 A
(Note 2)
(Note 2)
IF = 43 A, di/dt = 100 A/μs
Min.
60
2.0
0.1
Typ. Max. Units
V
30 mV/°C
1
±100
μA
nA
3.5 4.0
V
-13 mV/°C
0.87 1.1
1.1 1.3 mΩ
1.3 1.7
134 S
14406
3222
87
1.8
20170
4515
175
4.5
pF
pF
pF
Ω
75 120 ns
47 76 ns
66 106 ns
19 34 ns
170 238 nC
137 192 nC
71 nC
19 nC
0.7 1.1
0.8 1.2
V
84 135 ns
89 143 nC
©2015 Fairchild Semiconductor Corporation
FDMT80060DC Rev. 1.1
2
www.fairchildsemi.com


Features FDMT80060DC N-Channel Dual CoolTM 88 Pow erTrench® MOSFET August 2015 FDMT800 60DC N-Channel Dual CoolTM 88 PowerTre nch® MOSFET 60 V, 292 A, 1.1 mΩ Feat ures General Description „ Max rDS(o n) = 1.1 mΩ at VGS = 10 V, ID = 43 A Max rDS(on) = 1.3 mΩ at VGS = 8 V, I D = 37 A „ Advanced Package and Silico n combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for s oft recovery „ Low profile 8x8mm MLP p ackage This N-Channel MOSFET is produc ed using Fairchild Semiconductor’s ad vanced PowerTrench® process. Advanceme nts in both silicon and Dual CoolTM pac kage technologies have been combined to offer the lowest rDS(on) while maintai ning excellent switching performance by extremely low Junction-to-Ambient ther mal resistance. Applications „ MSL1 r obust package design „ OringFET / Loa d Switching „ 100% UIL tested „ Syn chronous Rectification „ RoHS Complia nt „ DC-DC Conversion Pin 1 Pin 1 G S S G S SS D D D D D D Top Dual Coo.
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