FDMT80060DC

FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET August 2015 FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 60 V, 292 A, 1.1 mΩ Features General Description „ Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A „ Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications „ MSL1 robust package design „ OringFET / Load Switching „ 100% UIL tested „ Synchronous Rectification „ RoHS Compliant „ DC-DC Conversion Pin 1 Pin 1 G S S G S SS D D D D D D Top Dual CoolTM 88 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed Parameter TC = 25 °C TC = 100°C TA = 25 °C EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics S S (Note 5) (Note 5) (Note 1a) (Note 4) (Note 3) (Note 1a) D D Ratin...