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STGB30M65DF2 IGBT Datasheet |
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| Part Number | STGB30M65DF2 |
| Description | Trench gate field-stop IGBT |
| Manufacture | STMicroelectronics |
| Total Page | 18 Pages |
| Datasheet |
STGB30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A
low-loss in a D2PAK package
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
Features
 6 µs of short-circuit withstand time
ï‚· VCE(sat) = 1.55 V (typ.) @ IC = 30 A
ï‚· Tight parameters distribution
ï‚· Safer paralleling
ï‚· Low thermal resistance
ï‚· Soft and very fast recovery antiparallel diode
Applications
ï‚· Motor control
ï‚· UPS
ï‚· PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGB30M65DF2
Table 1: Device summary
Marking
Package
G30M65DF2
D²PAK
Packaging
Tape and reel
April 2017
DocID027431 Rev 3
This is information on a product in full production.
1/18
www.st.com
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Contents
Contents
STGB30M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ................................................................................... 11
4 Package information ..................................................................... 12
4.1 D²PAK (TO-263) type A package information ................................. 12
4.2 D2PAK (TO-263) type A packing information .................................. 15
5 Revision history ............................................................................ 17
2/18 DocID027431 Rev 3
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| Features | STGB30M65DF2 Trench gate field-stop IGB T, M series 650 V, 30 A low-loss in a D 2PAK package Datasheet - production dat a TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features ï‚· 6 µs o f short-circuit withstand time ï‚· VCE( sat) = 1.55 V (typ.) @ IC = 30 A ï‚· Ti ght parameters distribution ï‚· Safer p aralleling ï‚· Low thermal resistance ï ‚· Soft and very fast recovery antipara llel diode Applications ï‚· Motor contr ol ï‚· UPS ï‚· PFC Description This dev ice is an IGBT developed using an advan ced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optima l balance between inverter system perfo rmance and efficiency where low-loss an d short-circuit functionality are essen tial. Furthermore, the positive VCE(sat ) temperature coefficient and tight par ameter distribution result in safer par alleling operation. Order code STGB30M 65DF2 Table 1: Device summary Marking Package G30M65DF2 D²PAK Packaging Tape and reel April 2017 DocID027431 Rev 3. |
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