TPH1R712MD MOSFET Datasheet

TPH1R712MD Datasheet PDF, Equivalent


Part Number

TPH1R712MD

Description

Silicon P-Channel MOSFET

Manufacture

Toshiba

Total Page 9 Pages
PDF Download
Download TPH1R712MD Datasheet PDF


TPH1R712MD
MOSFETs Silicon P-Channel MOS (U-MOS)
TPH1R712MD
1. Applications
• Lithium-Ion Secondary Batteries
• Power Management Switches
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 1.35 m(typ.) (VGS = -4.5 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V)
(3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)
3. Packaging and Internal Circuit
TPH1R712MD
1,2,3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -20 V
Gate-source voltage
VGSS
±12
Drain current (DC)
(Tc = 25 )
(Note 1)
ID
-60 A
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
-200
Power dissipation
(Tc = 25 )
PD 78 W
Power dissipation
(t = 10 s)
(Note 2)
PD
2.8
Power dissipation
(t = 10 s)
(Note 3)
PD
1.6
Single-pulse avalanche energy
(Note 4)
EAS
468 mJ
Single-pulse avalanche current
IAS -60 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
©2019
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2014-03
2019-10-30
Rev.5.0

TPH1R712MD
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
(Tc = 25 )
(t = 10 s)
Channel-to-ambient thermal resistance
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = -16 V, Tch = 25 (initial), L = 100 µH, IAS = -60 A
(Note 2)
(Note 3)
TPH1R712MD
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a)
Max Unit
1.60 /W
44.6
78.1
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2019
Toshiba Electronic Devices & Storage Corporation
2
2019-10-30
Rev.5.0


Features MOSFETs Silicon P-Channel MOS (U-MOS) TPH1R712MD 1. Applications • Lithium -Ion Secondary Batteries • Power Mana gement Switches 2. Features (1) Low dra in-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low lea kage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = - 0.5 to -1.2 V (VDS = -10 V, ID = -1.0 m A) 3. Packaging and Internal Circuit T PH1R712MD 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute M aximum Ratings (Note) (Ta = 25  unle ss otherwise specified) Characteristic s Symbol Rating Unit Drain-source v oltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current (DC) (Tc = 25  ) (Note 1) ID -60 A Drain c urrent (pulsed) (t = 1 ms) (Note 1) IDP -200 Power dissipation (Tc = 25  ) PD 78 W Power dissipation (t = 10 s) (Note 2) PD 2.8 Power dissip ation (t = 10 s) (Note 3) PD 1.6 S ingle-pulse avalanche energy (Note 4) EAS 468 mJ Single-pulse avalanche current IAS -60 A Channel temperature T.
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