TPN4R712MD MOSFET Datasheet

TPN4R712MD Datasheet PDF, Equivalent


Part Number

TPN4R712MD

Description

Silicon P-Channel MOSFET

Manufacture

Toshiba

Total Page 9 Pages
PDF Download
Download TPN4R712MD Datasheet PDF


TPN4R712MD
MOSFETs Silicon P-Channel MOS (U-MOS)
TPN4R712MD
1. Applications
• Lithium-Ion Secondary Batteries
• Power Management Switches
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 3.8 m(typ.) (VGS = -4.5 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V)
(3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)
3. Packaging and Internal Circuit
TPN4R712MD
TSON Advance
1,2,3: Source
4: Gate
5, 6, 7, 8: Drain
©2019
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2014-12
2019-10-30
Rev.5.0

TPN4R712MD
TPN4R712MD
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
(Tc = 25 )
(t = 1 ms)
(Tc = 25 )
(t = 10 s)
(Note 1)
(Note 1)
(Note 2)
VDSS
VGSS
ID
IDP
PD
-20
±12
-36
-180
42
1.9
V
A
W
Power dissipation
(t = 10 s)
(Note 3)
0.7
Single-pulse avalanche energy
Single-pulse avalanche current
Channel temperature
Storage temperature
(Note 4)
EAS
IAS
Tch
Tstg
320
-36
150
-55 to 150
mJ
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(Tc = 25 )
(t = 10 s)
(t = 10 s)
(Note 2)
(Note 3)
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = -16 V, Tch = 25 (initial), L = 190 µH, IAS = -36 A
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a)
Max Unit
2.97 /W
65.7
178
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2019
Toshiba Electronic Devices & Storage Corporation
2
2019-10-30
Rev.5.0


Features MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD 1. Applications • Lithium -Ion Secondary Batteries • Power Mana gement Switches 2. Features (1) Low dra in-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leak age current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0 .5 to -1.2 V (VDS = -10 V, ID = -1.0 mA ) 3. Packaging and Internal Circuit TP N4R712MD TSON Advance 1,2,3: Source 4 : Gate 5, 6, 7, 8: Drain ©2019 Toshib a Electronic Devices & Storage Corporat ion 1 Start of commercial production 2014-12 2019-10-30 Rev.5.0 TPN4R712MD 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltag e Drain current (DC) Drain current (pul sed) Power dissipation Power dissipatio n (Tc = 25  ) (t = 1 ms) (Tc = 25 ) (t = 10 s) (Note 1) (Note 1) (Not e 2) VDSS VGSS ID IDP PD -20 ±12 -36 -180 42 1.9 V A W Power dissipation (t = 10 s) (Note 3) 0.7 Single-pulse .
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