MLA-01122B-C4 Amplifier Datasheet

MLA-01122B-C4 Datasheet PDF, Equivalent


Part Number

MLA-01122B-C4

Description

1 - 12GHz Packaged Low-Noise MMIC Amplifier

Manufacture

MicroWave

Total Page 4 Pages
Datasheet
Download MLA-01122B-C4 Datasheet


MLA-01122B-C4
MLA-01122B-C4
1 - 12 GHz Packaged Low-Noise MMIC Amplifier
FEATURES
Wideband:
NF:
1.0 to 12 GHz
1.3 dB @ 2.0 GHz
1.4 dB @ 6.0 GHz
1.9 dB @ 12.0 GHz
APPLICATIONS
Microwave Point-to-Point Radios
Satellite and Telemetry Communications
Test Instrumentation
P-1dB:
16 dBm @ 6.0 GHz
EW Receiver Systems
OIP3:
27 dBm @ 6.0 GHz
Wide-band Communication Systems
Gain:
17 dB @ 6.0 GHz
Commercial Wireless Systems
Bias Condition:
VDD = 5 V
IDD = 55 mA
50-Ohm On-chip Matching
Unconditionally Stable: 50 MHz to 20 GHz
Gain Control Option Available with 2nd Gate Control Voltage
4x4 mm, 24 Lead Ceramic SMT Package
DESCRIPTION
The MLA-01122B-C4 is a packaged fully-matched broadband Low-Noise MMIC amplifier utilizing high-reliability low-
noise GaAs PHEMT technology. This MMIC is suited for Satellite Communications, Microwave radios, Instrumentation,
Wideband Systems and also many commercial wireless applications where low-noise figure with high-gain is desirable.
It has excellent gain (17 dB) and Noise Figure (1.4 dB, mid-band) over a broad frequency range. Typical P-1dB is 16
dBm and OIP3 is +27dBm @ 6 GHz. It has on-chip bias circuit, choke and DC blocking to provide bias stability and
ease of use. The 2nd Gate voltage input can be used for gain control if necessary. Available in 4x4mm, 24 Lead Ceramic
SMT Package.
ELECTRICAL SPECIFICATIONS: VDD=+5.0V, VG1=+0.13V, VG2=+2V, IDD=55 mA, Ta=25 C, ZO=50 ohm (1)
PARAM ETER
TEST CONDITIONS
TYPICAL DATA
UNITS
Frequenc y Range
1-12
GHz
G ain
1 - 8 GHz
10 - 12 GHz
17 dB
19
Gain Flatness
1 - 8 GHz
1 - 12 GHz
0.7 + /-dB
1.5
2 GHz
15
Input R eturn Los s
5 GHz
9.5 dB
10 GHz
13
Output Return Los s
11 dB
2 GHz
17.5
Output P1dB
6 GHz
10 GHz
16.0
15.0
dBm
12 GHz
13.0
O utput IP 3
@ 0 dB m /tone, 1 M Hz s eparation
2 GHz
6 GHz
12 GHz
30
27 dBm
25
2 GHz
1.3
Nois e Figure
6 GHz
1.4 dB
12 GHz
1.9
O perating B ias Conditions : V DD
ID D
VG1=+0.13V, VG2=+2V
+5
55
V
mA
S tability Factor K
0.05 to 20 GHz
>1
(1) A ll data is meas ured on Ev aluation Board, w ith V G2 bias der iv ed f rom V DD bias us ing r es is tiv e v oltage div ider as s how n in Ev aluation
Boar d Sc hematic & Lay out. (2) V g1 c an be s lightly pos itiv e or negativ e depending on the lot and operation c urrent.
MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 1 of 4, Updated July 2017

MLA-01122B-C4
MLA-01122B-C4
1 - 12 GHz Packaged Low-Noise MMIC Amplifier
TYPICAL RF PERFORMANCE: VDD=+5.0V, VG1=+0.13V, VG2=+2V, IDD=55 mA, Ta=25 C, ZO=50 ohm (1)
G ain v e rsu s F r e q ue n cy & T em p
+25 C
+85 C
- 40 C
21
19
17
15
13
11
0 1 2 3 4 5 6 7 8 9 1 0 11 12 13 14
F re q u e nc y (G H z )
Return Loss versus Frequency
Input
Output
0
-5
-10
-15
-20
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
Isolation v e rsus Fre que ncy
0
-10
-20
-30
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Frequency (G Hz)
N oise Figure v e rsus Fre que ncy
Correcte d for PCB Input Loss
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
P-1d B v e r sus Fr e q u en cy & B ias
5 V , 55m A
6.5 V , 65m A
22
20
18
16
14
12
0 1 2 3 4 5 6 7 8 9 10 11 12 1 3 1 4
F r e que n cy (G H z )
Output IP3 versus Frequency
34
32
30
28
26
24
22
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
MicroWave Technology, Inc., 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved ©
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 2 of 4, Updated July 2017


Features MLA-01122B-C4 1 - 12 GHz Packaged Low-No ise MMIC Amplifier FEATURES • Wideba nd: • NF: 1.0 to 12 GHz 1.3 dB @ 2.0 GHz 1.4 dB @ 6.0 GHz 1.9 dB @ 12.0 GHz APPLICATIONS • Microwave Point-to-P oint Radios • Satellite and Telemetry Communications • Test Instrumentatio n • P-1dB: 16 dBm @ 6.0 GHz • EW Receiver Systems • OIP3: 27 dBm @ 6.0 GHz • Wide-band Communication Sy stems • Gain: 17 dB @ 6.0 GHz • Commercial Wireless Systems • Bias C ondition: VDD = 5 V IDD = 55 mA • 50-Ohm On-chip Matching • Unconditio nally Stable: 50 MHz to 20 GHz • Gai n Control Option Available with 2nd Gat e Control Voltage • 4x4 mm, 24 Lead Ceramic SMT Package DESCRIPTION The ML A-01122B-C4 is a packaged fully-matched broadband Low-Noise MMIC amplifier uti lizing high-reliability lownoise GaAs P HEMT technology. This MMIC is suited fo r Satellite Communications, Microwave r adios, Instrumentation, Wideband System s and also many commercial wireless applications where low-noise figure with high-gain is desir.
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