Data Sheet
BUZ11
September 2013 File Number 2253.2
N-Channel Power MOSFET 50V, 30A, 40 mΩ
This is an N-Channel enhanc...
Data Sheet
BUZ11
September 2013 File Number 2253.2
N-Channel Power MOSFET 50V, 30A, 40 mΩ
This is an N-Channel enhancement mode silicon gate power field effect
transistor designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ11_NR4941 TO-220AB
BUZ11
NOTE: When ordering, use the entire part number.
Features
30A, 50V rDS(ON) = 0.040Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G S
Packaging
JEDEC TO-220AB DRAIN (FLANGE)
SOURCE DRAIN GATE
©2001 Fairchild Semiconductor Corporation
BUZ11 Rev. C0
BUZ11
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ11
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain...