BUZ11 MOSFET Datasheet

BUZ11 Datasheet PDF, Equivalent


Part Number

BUZ11

Description

N-Channel Power MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
Datasheet
Download BUZ11 Datasheet


BUZ11
Data Sheet
BUZ11
September 2013 File Number 2253.2
N-Channel Power MOSFET
50V, 30A, 40 m
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ11_NR4941 TO-220AB
BUZ11
NOTE: When ordering, use the entire part number.
Features
• 30A, 50V
• rDS(ON) = 0.040
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2001 Fairchild Semiconductor Corporation
BUZ11 Rev. C0

BUZ11
BUZ11
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ11
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50
50
30
120
±20
75
0.6
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0V
VGS(TH)
IDSS
IGSS
rDS(ON)
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 50V, VGS = 0V
TJ = 125oC, VDS = 50V, VGS = 0V
VGS = 20V, VDS = 0V
ID = 15A, VGS = 10V (Figure 8)
gfs
td(ON)
tr
VDS = 25V, ID = 15A (Figure 11)
VCC = 30V, ID 3A, VGS = 10V, RGS = 50Ω,
RL = 10
td(OFF)
tf
CISS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
COSS
CRSS
RθJC
RθJA
MIN TYP MAX UNITS
50 - - V
2.1 3 4 V
- 20 250 µA
- 100 1000 µA
- 10 100 nA
- 0.03 0.04
48 - S
- 30 45 ns
-
70 110
ns
-
180 230
ns
-
130 170
ns
- 1500 2000 pF
- 750 1100 pF
-
250 400
pF
1.67
oC/W
75 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD
ISDM
VSD
trr
QRR
TC = 25oC
TC = 25oC
TJ = 25oC, ISD = 60A, VGS = 0V
TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs,
VR = 30V
- - 30
- - 120
- 1.7 2.6
- 200 -
- 0.25 -
NOTES:
2. Pulse Test: Pulse width 300ms, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
BUZ11 Rev. C0


Features Data Sheet BUZ11 September 2013 File Nu mber 2253.2 N-Channel Power MOSFET 50V , 30A, 40 mΩ This is an N-Channel en hancement mode silicon gate power fiel d effect transistor designed for applic ations such as switching regulators, sw itching converters, motor drivers, rela y drivers and drivers for high power bi polar switching transistors requiring h igh speed and low gate drive power. Thi s type can be operated directly from in tegrated circuits. Formerly development al type TA9771. Ordering Information PART NUMBER PACKAGE BRAND BUZ11_NR49 41 TO-220AB BUZ11 NOTE: When ordering , use the entire part number. Features • 30A, 50V • rDS(ON) = 0.040Ω SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guide lines for Soldering Surface Mount Compo nents to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2001 Fairchild Semiconducto.
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