SiC Schottky Barrier Diode
SCS110AM
lApplications Switching power supply
lDimensions (Unit : mm)
lFeatures 1) Shorter...
SiC
Schottky Barrier Diode
SCS110AM
lApplications Switching power supply
lDimensions (Unit : mm)
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer type
Data Sheet
lStructure
ROHM : TO-220FM2L
lAbsolute maximum ratings (Tj=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Total power disspation Junction temperature
VRM VR IF
IFSM
IFRM PD Tj
600
600
10*1 40*2 160*3 23*4 28*5
150
V V A A A A W °C
Storage temperature
Tstg -55 to +150
°C
Junction to case
Rth(j-c)
4.4
°C / W
(*1)Tc=69°C (*2)PW=8.3ms sinusoidal,Tj=25°C (*3)PW=10ms square,Tj=25°C
(*4)Tc=95°C,Tj=125°C,Duty cycle=10% (*5)Tc=25°C
lElectrical characteristics (Tj=25°C) [Per Leg]
Parameter
Symbol Min.
DC blocking voltage
VDC 600
Forward voltage
VF
-
Reverse current
IR
-
Total capacitance
C-
Total capacitive charge
Qc -
Switching time
tc -
Typ. -
1.5 1.6 2 10 430 47 16 15
Max. -
1.7 -
200 -
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Unit Conditions V IR=0.2mA V IF=10A,Tj=25°C V IF=10A,Tj=150°C μA VR=600V,Tj=25°C μA VR=600V,Tj=150°C pF VR=1V,f=1MHz pF VR=600V,f=1MHz nC VR=400V,di/dt=350A/μs ns VR=400V,di/dt=350A/μs
2012.04 - Rev.A
SCS110AM
Data Sheet
FORWARD CURRENT : IF(A)
REVERSE CURRENT (μA)
100 pulsed
10
Fig.1 VF-IF Characteri...