SCS110AM Diode Datasheet

SCS110AM Datasheet PDF, Equivalent


Part Number

SCS110AM

Description

SiC Schottky Barrier Diode

Manufacture

ROHM

Total Page 4 Pages
Datasheet
Download SCS110AM Datasheet


SCS110AM
SiC Schottky Barrier Diode
SCS110AM
lApplications
Switching power supply
lDimensions (Unit : mm)
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer type
Data Sheet
lStructure
ROHM : TO-220FM2L
lAbsolute maximum ratings (Tj=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward
current
Repetitive peak forward current
Total power disspation
Junction temperature
VRM
VR
IF
IFSM
IFRM
PD
Tj
600
600
10*1
40*2
160*3
23*4
28*5
150
V
V
A
A
A
A
W
°C
Storage temperature
Tstg -55 to +150
°C
Junction to case
Rth(j-c)
4.4
°C / W
(*1)Tc=69°C (*2)PW=8.3ms sinusoidal,Tj=25°C (*3)PW=10ms square,Tj=25°C
(*4)Tc=95°C,Tj=125°C,Duty cycle=10% (*5)Tc=25°C
lElectrical characteristics (Tj=25°C) [Per Leg]
Parameter
Symbol Min.
DC blocking voltage
VDC 600
Forward voltage
VF
-
-
Reverse current
IR
-
-
Total capacitance
C-
-
Total capacitive charge
Qc -
Switching time
tc -
Typ.
-
1.5
1.6
2
10
430
47
16
15
Max.
-
1.7
-
200
-
-
-
-
-
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© 2012 ROHM Co., Ltd. All rights reserved.
1/3
Unit Conditions
V IR=0.2mA
V IF=10A,Tj=25°C
V IF=10A,Tj=150°C
μA VR=600V,Tj=25°C
μA VR=600V,Tj=150°C
pF VR=1V,f=1MHz
pF VR=600V,f=1MHz
nC VR=400V,di/dt=350A/μs
ns VR=400V,di/dt=350A/μs
2012.04 - Rev.A

SCS110AM
SCS110AM
 
Data Sheet
100
pulsed
10
Fig.1 VF-IF Characteristics
1
Ta= 125°C
0.1
Ta= 75°C
0.01
Ta= 25°C
Ta= -25°C
0.001
0
100
10
0.5 1 1.5 2
FORWARD VOLTAGE : VF (V)
Fig.3 VR-IR Characteristics
Ta= 125°C
2.5
1 Ta= 75°C
0.1 Ta= 25°C
0.01
0.001
0
Ta= -25°C
100 200 300 400 500
REVERSE VOLTAGE: VR (V)
600
Fig.5 Thermal Resistance vs. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.0001 0.001 0.01 0.1 1 10
PULSE WIDTH : Pw (s)
100 1000
14 pulsed
Fig.2 VF-IF Characteristics
12
10
8
6
4
Ta= 75°C
2
Ta= 125°C
0
0 0.5 1
Ta= 25°C
Ta= -25°C
1.5 2
FORWARD VOLTAGE : VF (V)
1000
Fig.4 VR-Ct Characteristics
2.5
100
10
Ta=25°C
f=1MHz
1
0.01 0.1 1 10 100
REVERSE VOLTAGE : VR [V]
1000
30
25
20
15
10
5
0
0
Fig.6 Power Dissipation
30 60 90 120
CASE TEMPERATURE : Tc (°C)
150
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© 2012 ROHM Co., Ltd. All rights reserved.
2/3
2012.04 - Rev.A


Features SiC Schottky Barrier Diode SCS110AM lAp plications Switching power supply lDim ensions (Unit : mm) lFeatures 1) Short er recovery time 2) Reduced temperature dependence 3) High-speed switching pos sible lConstruction Silicon carbide epi taxial planer type Data Sheet lStructu re ROHM : TO-220FM2L lAbsolute maximu m ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repeti tive) Reverse voltage (DC) Continuous f orward current Surge no repetitive forw ard current Repetitive peak forward cur rent Total power disspation Junction te mperature VRM VR IF IFSM IFRM PD Tj 6 00 600 10*1 40*2 160*3 23*4 28*5 150 V V A A A A W °C Storage temperature Tstg -55 to +150 °C Junction to case Rth(j-c) 4.4 °C / W (*1)Tc=69°C (*2)PW=8.3ms sinusoidal,Tj=25°C (*3)PW =10ms square,Tj=25°C (*4)Tc=95°C,Tj= 125°C,Duty cycle=10% (*5)Tc=25°C lEl ectrical characteristics (Tj=25°C) [Pe r Leg] Parameter Symbol Min. DC bloc king voltage VDC 600 Forward voltage VF - Reverse current IR - Tot.
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