SCS120KG Diode Datasheet

SCS120KG Datasheet PDF, Equivalent


Part Number

SCS120KG

Description

SiC Schottky Barrier Diode

Manufacture

ROHM

Total Page 6 Pages
Datasheet
Download SCS120KG Datasheet


SCS120KG
SCS120KG
SiC Schottky Barrier Diode
VR 1200V
IF 20A
QC 70nC
Features
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
Construction
Silicon carbide epitaxial planer type
Outline
TO-220AC
Datasheet
(1)
Inner circuit
(2) (3)
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2) (3)
Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
50
-
SCS120KG
Absolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power dissipation
Junction temperature
VRM 1200
VR 1200
IF 20*1
84*2
IFSM 358*3
IFRM
60*4
PD 130*5
Tj 175
Range of storage temperature
Tstg
55 to 175
Thermal resistance, junction to case
Rth(j-c)
1.1
*1 Tc=108°C *2 PW=8.3ms sinusoidal,Tj=25°C
*3 PW=10s square,Tj=25°C *4 Tc=100°C,Tj=150°C,Duty cycle=10% *5 Tc=25°C
Unit
V
V
A
A
A
A
W
°C
°C
°C/W
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/5
2013.01 - Rev.B

SCS120KG
SCS120KG
Data Sheet
Electrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
DC blocking voltage
VDC IR =0.4mA
1200
-
-
Forward voltage
IF=20A,Tj=25°C
VF
IF=20A,Tj=175°C
- 1.5 1.75
- 2.0 -
Reverse current
VR=1200V,Tj=25°C
IR
VR=120V,Tj=175°C
- 20 400
- 240 -
Total capacitance
VR=1V,f=1MHz
C
VR=800V,f=1MHz
- 1300 -
- 100 -
Total capacitive charge
Qc VR=800V,di/dt=500A/s - 70 -
Switching time
tc VR=800V,di/dt=500A/s - 18 -
Unit
V
V
V
A
A
pF
pF
nC
ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/5
2013.01 - Rev.B


Features SCS120KG SiC Schottky Barrier Diode VR 1 200V IF 20A QC 70nC Features 1) Shor ter recovery time 2) Reduced temperatur e dependence 3) High-speed switching po ssible Construction Silicon carbide epitaxial planer type Outline TO-22 0AC Datasheet (1) Inner circuit ( 2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) Packaging specificat ions Packaging Reel size (mm) Tape widt h (mm) Type Basic ordering unit (pcs) T aping code Marking Tube 50 - SCS120KG Absolute maximum ratings (Tj = 25° C) Parameter Symbol Value Reverse vo ltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitiv e peak forward current Total power diss ipation Junction temperature VRM 1200 VR 1200 IF 20*1 84*2 IFSM 358*3 IFR M 60*4 PD 130*5 Tj 175 Range of sto rage temperature Tstg 55 to 175 Thermal resistance, junction to case Rth(j-c) 1.1 *1 Tc=108°C *2 PW=8.3m s sinusoidal,Tj=25°C *3 PW=10s square,Tj=25°C *4 Tc=100°C,Tj=150°C,Duty cycle=10.
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