CTS05S40 Diode Datasheet

CTS05S40 Datasheet PDF, Equivalent


Part Number

CTS05S40

Description

Schottky Barrier Diode

Manufacture

Toshiba

Total Page 5 Pages
Datasheet
Download CTS05S40 Datasheet


CTS05S40
Schottky Barrier Diode Silicon Epitaxial
CTS05S40
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
CTS05S40
1: Cathode
2: Anode
CST2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
40 V
Reverse voltage
VR 30
Average rectified current
IO (Note 1)
0.5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
2
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
Start of commercial production
2013-06
1 2014-04-04
Rev.3.0

CTS05S40
CTS05S40
4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Forward voltage
Reverse current
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
IR(1)
IR(2)
Ct
IF = 0.1 A (Pulse test)
IF = 0.5 A (Pulse test)
VR = 10 V (Pulse test)
VR = 40 V (Pulse test)
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.31 0.35 V
0.56 0.60 V
  30 µA
  50 µA
42 pF
5. Marking
Marking Code
7A
Fig. 5.1 Marking
Part Number
CTS05S40
6. Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
7. Land Pattern Dimensions (for reference only)
Fig. 7.1 Land Pattern Dimensions for Reference Only (Unit: mm)
2 2014-04-04
Rev.3.0


Features Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Spee d Switching 2. Packaging and Internal C ircuit CTS05S40 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings (Note ) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rat ing Unit Peak reverse voltage VRM 4 0 V Reverse voltage VR 30 Average re ctified current IO (Note 1) 0.5 A N on-repetitive peak forward surge curren t IFSM (Note 2) 2 Junction temperatu re Tj 125  Storage temperature Ts tg -55 to 125 Note: Using continuously under heavy loads (e.g. the applicatio n of high temperature/current/voltage a nd the significant change in temperatur e, etc.) may cause this product to decr ease in the reliability significantly e ven if the operating conditions (i.e. o perating temperature/current/voltage, e tc.) are within the absolute maximum ra tings. Please design the appropriate re liability upon reviewing the Toshiba Se miconductor Reliability Handbook ("Handling Precautions"/"Derating Co.
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