CUS05S40 Diode Datasheet

CUS05S40 Datasheet PDF, Equivalent


Part Number

CUS05S40

Description

Schottky Barrier Diode

Manufacture

Toshiba

Total Page 6 Pages
Datasheet
Download CUS05S40 Datasheet


CUS05S40
Schottky Barrier Diode Silicon Epitaxial
CUS05S40
1. Applications
• High-Speed Switching
2. Features
(1) Small package
(2) Low forward voltage: VF(2) = 0.56 V (typ.) (@ IF = 500mA)
3. Packaging and Internal Circuit
CUS05S40
USC
1: Cathode
2: Anode
Start of commercial production
2013-11
1 2014-04-07
Rev.2.0

CUS05S40
CUS05S40
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
40 V
Average rectified current
IO (Note 1)
500
mA
Non-repetitive peak forward surge current
IFSM (Note 2)
5
A
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
IR(1)
IR(2)
Ct
IF = 100 mA (Pulse test)
IF = 500 mA (Pulse test)
VR = 10 V (Pulse test)
VR = 40 V (Pulse test)
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.31 0.35 V
0.56 0.60
  30 µA
  50
42 pF
6. Marking
Marking Code
7A
Fig. 6.1 Marking
Part Number
CUS05S40
2
2014-04-07
Rev.2.0


Features Schottky Barrier Diode Silicon Epitaxial CUS05S40 1. Applications • High-Spee d Switching 2. Features (1) Small packa ge (2) Low forward voltage: VF(2) = 0.5 6 V (typ.) (@ IF = 500mA) 3. Packaging and Internal Circuit CUS05S40 USC 1: Cathode 2: Anode Start of commercial production 2013-11 1 2014-04-07 Rev.2.0 CUS05S40 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Not e Rating Unit Peak reverse voltage VRM 40 V Average rectified current I O (Note 1) 500 mA Non-repetitive pea k forward surge current IFSM (Note 2) 5 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy l oads (e.g. the application of high temp erature/current/voltage and the signifi cant change in temperature, etc.) may c ause this product to decrease in the re liability significantly even if the ope rating conditions (i.e. operating tempe rature/current/voltage, etc.) are within the absolute maximum ratings.
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